Imaging element, stacked imaging element, and solid-state imaging apparatus

ABSTRACT

An imaging element includes a photoelectric conversion unit including a first electrode  11 , a photoelectric conversion layer  13 , and a second electrode  12  that are stacked, in which the photoelectric conversion unit further includes a charge storage electrode  14  arranged apart from the first electrode  11  and arranged to face the photoelectric conversion layer  13  through an insulating layer  82 , and when photoelectric conversion occurs in the photoelectric conversion layer  13  after light enters the photoelectric conversion layer  13 , an absolute value of a potential applied to a part  13   C  of the photoelectric conversion layer  13  facing the charge storage electrode  14  is a value larger than an absolute value of a potential applied to a region  13   B  of the photoelectric conversion layer  13  positioned between the imaging element and an adjacent imaging element.

TECHNICAL FIELD

The present disclosure relates to an imaging element, a stacked imagingelement, and a solid-state imaging apparatus.

BACKGROUND ART

An imaging element including an organic semiconductor material in aphotoelectric conversion layer can photoelectrically convert a specificcolor (wavelength band). Furthermore, in a case of using the imagingelement in a solid-state imaging apparatus, such a feature allows toobtain a structure including stacked subpixels (stacked imagingelements) that is impossible in a conventional solid-state imagingapparatus. In the structure, the subpixel includes a combination of anon-chip color filter (OCCF) and the imaging element, and the subpixelsare two-dimensionally arrayed (for example, see Japanese PatentLaid-Open No. 2011-138927). There is also an advantage that demosaicingis not necessary, and a false color is not generated. Note that in thefollowing description, an imaging element including a photoelectricconversion unit provided on a semiconductor substrate or on an upperside of the semiconductor substrate may be referred to as an “imagingelement of first type” for convenience. A photoelectric conversionelement included in the imaging element of first type may be referred toas a “photoelectric conversion unit of first type” for convenience. Animaging element provided in the semiconductor substrate may be referredto as an “imaging element of second type” for convenience. Aphotoelectric conversion unit included in the imaging element of secondtype may be referred to as a “photoelectric conversion unit of secondtype” for convenience.

FIG. 102 illustrates an example of structure of a conventional stackedimaging element (stacked solid-state imaging apparatus). In the exampleillustrated in FIG. 102 , a third photoelectric conversion unit 331 anda second photoelectric conversion unit 321, which are photoelectricconversion units of second type included in a third imaging element 330and a second imaging element 320 that are imaging elements of secondtype, are stacked and formed in a semiconductor substrate 370. Inaddition, a first photoelectric conversion unit 311 that is aphotoelectric conversion unit of first type is arranged on the upperside of the semiconductor substrate 370 (specifically, upper side ofsecond imaging element 320). Here, the first photoelectric conversionunit 311 includes a first electrode 311, a photoelectric conversionlayer 313 including an organic material, and a second electrode 312. Thefirst photoelectric conversion unit 311 is included in a first imagingelement 310 that is an imaging element of first type. The secondphotoelectric conversion unit 321 and the third photoelectric conversionunit 331 photoelectrically convert, for example, blue light and redlight, respectively, based on the difference in absorption coefficients.In addition, the first photoelectric conversion unit 311photoelectrically converts, for example, green light.

The charge generated by the photoelectric conversion in the secondphotoelectric conversion unit 321 and the third photoelectric conversionunit 331 is temporarily stored in the second photoelectric conversionunit 321 and the third photoelectric conversion unit 331. Subsequently,a vertical transistor (gate portion 322 is illustrated) and a transfertransistor (gate portion 332 is illustrated) transfer the charge to asecond floating diffusion layer (Floating Diffusion) FD₂ and a thirdfloating diffusion layer FD₃, respectively. The charge is further outputto an external reading circuit (not illustrated). The transistors andthe floating diffusion layers FD₂ and FD₃ are also formed on thesemiconductor substrate 370.

The charge generated by the photoelectric conversion in the firstphotoelectric conversion unit 311 is stored in a first floatingdiffusion layer FD₁ formed on the semiconductor substrate 370 through acontact hole portion 361 and a wiring layer 362. In addition, the firstphotoelectric conversion unit 311 is also connected to a gate portion318 of an amplification transistor that converts the charge amount intovoltage through the contact hole portion 361 and the wiring layer 362.Furthermore, the first floating diffusion layer FD₁ includes part of areset transistor (gate portion 317 is illustrated). Note that referencenumber 371 denotes an element separation region. Reference number 372denotes an oxide film formed on the surface of the semiconductorsubstrate 370. Reference numbers 376 and 381 denote interlayerinsulating layers. Reference number 383 denotes a protective layer.Reference number 390 denotes an on-chip micro lens.

CITATION LIST Patent Literature [PTL 1]

Japanese Patent Laid-Open No. 2011-138927

SUMMARY Technical Problem

Meanwhile, in the imaging element with the configuration and thestructure, the charge generated by the photoelectric conversion may flowinto an adjacent imaging element. So-called blooming may occur, and thequality of a taken video (image) may be degraded.

Therefore, an object of the present disclosure is to provide an imagingelement with a configuration and a structure that are unlikely to causea degradation of the quality of a taken video (image), a stacked imagingelement including the imaging element, and a solid-state imagingapparatus including the imaging element or the stacked imaging element.

Solution to Problem

Each of imaging elements according to first to ninth aspects of thepresent disclosure for attaining the object includes a photoelectricconversion unit including a first electrode, a photoelectric conversionlayer, and a second electrode that are stacked, in which thephotoelectric conversion unit further includes a charge storageelectrode arranged apart from the first electrode and arranged to facethe photoelectric conversion layer through an insulating layer.

Furthermore, in the imaging element according to the first aspect, whenphotoelectric conversion occurs in the photoelectric conversion layerafter light enters the photoelectric conversion layer, an absolute valueof a potential applied to a part of the photoelectric conversion layerfacing the charge storage electrode is a value larger than an absolutevalue of a potential applied to a region of the photoelectric conversionlayer positioned between the imaging element and an adjacent imagingelement.

Furthermore, in the imaging element according to the second aspect ofthe present disclosure, a width of a region of the photoelectricconversion layer positioned between the first electrode and the chargestorage electrode is narrower than a width of a region of thephotoelectric conversion layer positioned between the imaging elementand an adjacent imaging element.

Furthermore, in the imaging element according to the third aspect of thepresent disclosure, a charge movement control electrode is formed in aregion facing, through the insulating layer, a region of thephotoelectric conversion layer positioned between the imaging elementand an adjacent imaging element.

Furthermore, in the imaging element according to the fourth aspect ofthe present disclosure, a charge movement control electrode is formed,in place of the second electrode, over a region of the photoelectricconversion layer positioned between the imaging element and an adjacentimaging element.

Furthermore, in the imaging element according to the fifth aspect of thepresent disclosure, a value of a dielectric constant of an insulatingmaterial included in a region between the first electrode and the chargestorage electrode is higher than a value of a dielectric constant of aninsulating material included in a region between the imaging element andan adjacent imaging element.

Furthermore, in the imaging element according to the sixth aspect of thepresent disclosure, a thickness of a region of the insulating layerpositioned between the first electrode and the charge storage electrodeis thinner than a thickness of a region of the insulating layerpositioned between the imaging element and an adjacent imaging element.

Furthermore, in the imaging element according to the seventh aspect ofthe present disclosure, a thickness of a region of the photoelectricconversion layer positioned between the first electrode and the chargestorage electrode is thicker than a thickness of a region of thephotoelectric conversion layer positioned between the imaging elementand an adjacent imaging element.

Furthermore, in the imaging element according to the eighth aspect ofthe present disclosure, a fixed charge amount in a region of aninterface between the photoelectric conversion layer and the insulatinglayer positioned between the first electrode and the charge storageelectrode is less than a fixed charge amount in a region of an interfacebetween the photoelectric conversion layer and the insulating layerpositioned between the imaging element and an adjacent imaging element.

Furthermore, in the imaging element according to the ninth aspect of thepresent disclosure, a value of charge mobility in a region of thephotoelectric conversion layer positioned between the first electrodeand the charge storage electrode is larger than a value of chargemobility in a region of the photoelectric conversion layer positionedbetween the imaging element and an adjacent imaging element.

A stacked imaging element of the present disclosure for attaining theobject includes at least one of the imaging elements according to thefirst to ninth aspects of the present disclosure.

A solid-state imaging apparatus according to a first aspect of thepresent disclosure for attaining the object includes a plurality ofimaging elements according to the first to ninth aspects of the presentdisclosure. In addition, a solid-state imaging apparatus according to asecond aspect of the present disclosure for attaining the objectincludes a plurality of stacked imaging elements according to thepresent disclosure.

Advantageous Effects of Invention

In each of the imaging elements according to the first to ninth aspectsof the present disclosure, the imaging elements according to the firstto ninth aspects of the present disclosure included in the stackedimaging elements, and the imaging elements according to the first toninth aspects of the present disclosure included in the solid-stateimaging apparatuses according to the first and second aspects of thepresent disclosure (hereinafter, the imaging elements will becollectively referred to as “imaging element and the like of the presentdisclosure” in some cases), the charge storage electrode arranged apartfrom the first electrode and arranged to face the photoelectricconversion layer through the insulating layer is provided, and thecharge can be stored in the photoelectric conversion layer when thelight is applied to the photoelectric conversion unit andphotoelectrically converted by the photoelectric conversion unit.Therefore, the charge storage portion can be fully depleted to deletethe charge at the start of exposure. This can suppress the phenomenon ofreduction in imaging quality caused by the degradation of random noisedue to an increase in kTC noise.

Furthermore, in each of the imaging element according to the firstaspect of the present disclosure, the imaging element according to thefirst aspect of the present disclosure included in the stacked imagingelement, and the imaging element according to the first aspect of thepresent disclosure included in the solid-state imaging apparatusesaccording to the first and second aspects of the present disclosure(hereinafter, the imaging elements will be collectively referred to as“imaging element and the like according to the first aspect of thepresent disclosure” in some cases), the absolute value of the potentialapplied to the part of the photoelectric conversion layer facing thecharge storage electrode is a value larger than the absolute value ofthe potential applied to the region of the photoelectric conversionlayer positioned between the imaging element and the adjacent imagingelement when the photoelectric conversion occurs in the photoelectricconversion layer after the light enters the photoelectric conversionlayer. Therefore, the charge generated by the photoelectric conversionis strongly attracted to the part of the photoelectric conversion layerfacing the charge storage electrode. This can prevent the chargegenerated by the photoelectric conversion from flowing into the adjacentimaging element, and the quality of the taken video (image) is notdegraded

Furthermore, in each of the imaging element according to the secondaspect of the present disclosure, the imaging element according to thesecond aspect of the disclosure included in the stacked imaging element,and the imaging element of the second aspect of the present disclosureincluded in the solid-state imaging apparatuses according to the firstand second aspects of the present disclosure (hereinafter, the imagingelements will be collectively referred to as “imaging element and thelike according to the second aspect of the present disclosure” in somecases), the width of the region of the photoelectric conversion layerpositioned between the first electrode and the charge storage electrodeis narrower than the width of the region of the photoelectric conversionlayer positioned between the imaging element and the adjacent imagingelement. Furthermore, in this case, the region between the firstelectrode and the charge storage electrode is unlikely to be affected bythe voltage of the second electrode (upper electrode), compared to thepart positioned between the imaging element and the adjacent imagingelement. Therefore, the potential becomes large, and this can preventthe charge generated by the photoelectric conversion from flowing intothe adjacent imaging element, and the quality of the taken video (image)is not degraded.

Furthermore, in each of the imaging element according to the thirdaspect of the present disclosure, the imaging element according to thethird aspect of the present disclosure included in the stacked imagingelement, and the imaging element according to the third aspect of thepresent disclosure included in the solid-state imaging apparatusesaccording to the first and second aspects of the present disclosure(hereinafter, the imaging elements will be collectively referred to as“imaging element and the like according to the third aspect of thepresent disclosure” in some cases), the charge movement controlelectrode is formed in the region facing, through the insulating layer,the region of the photoelectric conversion layer positioned between theimaging element and the adjacent imaging element. This can control theelectric field and the potential of the region of the photoelectricconversion layer positioned on the upper side of the charge movementcontrol electrode. As a result, the charge movement control electrodecan prevent the charge generated by the photoelectric conversion fromflowing into the adjacent imaging element, and the quality of the takenvideo (image) is not degraded.

Furthermore, in each of the imaging element according to the fourthaspect of the present disclosure, the imaging element according to thefourth aspect of the present disclosure included in the stacked imagingelement, and the imaging element according to the fourth aspect of thepresent disclosure included in the solid-state imaging apparatusesaccording to the first and second aspects of the present disclosure(hereinafter, the imaging elements will be collectively referred to as“imaging element and the like according to the fourth aspect of thepresent disclosure” in some cases), the charge movement controlelectrode is formed, in place of the second electrode, over the regionof the photoelectric conversion layer positioned between the imagingelement and the adjacent imaging element. Therefore, the charge movementcontrol electrode can prevent the charge generated by the photoelectricconversion from flowing into the adjacent imaging element, and thequality of the taken video (image) is not degraded.

Furthermore, in each of the imaging element according to the fifthaspect of the present disclosure, the imaging element according to thefifth aspect of the present disclosure included in the stacked imagingelement, and the imaging element according to the fifth aspect of thepresent disclosure included in the solid-state imaging apparatusesaccording to the first and second aspects of the present disclosure(hereinafter, the imaging elements will be collectively referred to as“imaging element and the like according to the fifth aspect of thepresent disclosure” in some cases), the value of the dielectric constantof the insulating material included in the region between the firstelectrode and the charge storage electrode is higher than the value ofthe dielectric constant of the insulating material included in theregion between the imaging element and the adjacent imaging element.Therefore, the capacity of a kind of capacitor (referred to as“capacitor-A” for convenience) formed in the region of the chargestorage electrode positioned between the first electrode and the chargestorage electrode is larger than the capacity of a kind of capacitor(referred to as “capacitor-B” for convenience) formed in the region ofthe charge storage electrode positioned between the imaging element andthe adjacent imaging element. The charge is more attracted toward theregion between the first electrode and the charge storage electrode thantoward the region between the imaging element and the adjacent imagingelement. This can prevent the charge generated by the photoelectricconversion from flowing into the adjacent imaging element, and thequality of the taken video (image) is not degraded.

Furthermore, in each of the imaging element according to the sixthaspect of the present disclosure, the imaging element according to thesixth aspect of the present disclosure included in the stacked imagingelement, and the imaging element according to the sixth aspect of thepresent disclosure included in the solid-state imaging apparatusesaccording to the first and second aspects of the present disclosure(hereinafter, the imaging elements will be collectively referred to as“imaging element and the like according to the sixth aspect of thepresent disclosure” in some cases), the thickness of the region of theinsulating layer positioned between the first electrode and the chargestorage electrode is thinner than the thickness of the region of theinsulating layer positioned between the imaging element and the adjacentimaging element. Therefore, the capacity of the capacitor-A is largerthan the capacity of the capacitor-B, and the charge is more attractedtoward the region of the insulating layer positioned between the firstelectrode and the charge storage electrode than toward the region of theinsulating layer positioned between the imaging element and the adjacentimaging element. This can prevent the charge generated by thephotoelectric conversion from flowing into the adjacent imaging element,and the quality of the taken video (image) is not degraded.

Furthermore, in each of the imaging element according to the seventhaspect of the present disclosure, the imaging element according to theseventh aspect of the present disclosure included in the stacked imagingelement, and the imaging element according to the seventh aspect of thepresent disclosure included in the solid-state imaging apparatusesaccording to the first and second aspects of the present disclosure(hereinafter, the imaging elements will be collectively referred to as“imaging element and the like according to the seventh aspect of thepresent disclosure” in some cases), the thickness of the region of thephotoelectric conversion layer positioned between the first electrodeand the charge storage electrode is thicker than the thickness of theregion of the photoelectric conversion layer positioned between theimaging element and the adjacent imaging element. Furthermore, in thiscase, the region of the photoelectric conversion layer positionedbetween the imaging element and the adjacent imaging element is moreaffected by the voltage of the second electrode (upper electrode), andthe potential becomes small. This can prevent the charge generated bythe photoelectric conversion from flowing into the adjacent imagingelement, and the quality of the taken video (image) is not degraded.

Furthermore, in each of the imaging element according to the eighthaspect of the present disclosure, the imaging element according to theeighth aspect of the present disclosure included in the stacked imagingelement, and the imaging element according to the eighth aspect of thepresent disclosure included in the solid-state imaging apparatusesaccording to the first and second aspects of the present disclosure(hereinafter, the imaging elements will be collectively referred to as“imaging element and the like according to the eighth aspect of thepresent disclosure” in some cases), the fixed charge amount in theregion of the interface between the photoelectric conversion layer andthe insulating layer positioned between the first electrode and thecharge storage electrode is less than the fixed charge amount in theregion of the interface between the photoelectric conversion layer andthe insulating layer positioned between the imaging element and theadjacent imaging element. Furthermore, furthermore, in this case, thepotential of the region of the photoelectric conversion layer positionedbetween the imaging element and the adjacent imaging element changesmore in accordance with the amount of fixed charge. This can prevent thecharge generated by the photoelectric conversion from flowing into theadjacent imaging element, and the quality of the taken video (image) isnot degraded.

Furthermore, in each of the imaging element according to the ninthaspect of the present disclosure, the imaging element according to theninth aspect of the present disclosure included in the stacked imagingelement, and the imaging element according to the ninth aspect of thepresent disclosure included in the solid-state imaging apparatusesaccording to the first and second aspects of the present disclosure(hereinafter, the imaging elements will be collectively referred to as“imaging element and the like according to the ninth aspect of thepresent disclosure” in some cases), the value of the charge mobility inthe region of the photoelectric conversion layer positioned between thefirst electrode and the charge storage electrode is larger than thevalue of the charge mobility in the region of the photoelectricconversion layer positioned between the imaging element and the adjacentimaging element. In this case, the charge more easily flows toward thefirst electrode than toward the direction of the adjacent imagingelement. This can prevent the charge generated by the photoelectricconversion from flowing into the adjacent imaging element, and thequality of the taken video (image) is not degraded.

Note that the advantageous effects described in the presentspecification are illustrative only and are not limited. In addition,there may also be additional advantageous effects.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A and 1B are a schematic cross-sectional view of part of imagingelements of Embodiment 1 (two imaging elements arranged side by side)and a schematic cross-sectional view of a modified example (modifiedexample 6 of Embodiment 1) of the imaging elements of Embodiment 1 (twoimaging elements arranged side by side), respectively.

FIG. 2 is a schematic partial cross-sectional view of the imagingelement and a stacked imaging element of Embodiment 1.

FIG. 3 is an equivalent circuit diagram of the imaging element and thestacked imaging element of Embodiment 1.

FIG. 4 is an equivalent circuit diagram of the imaging element and thestacked imaging element of Embodiment 1.

FIG. 5 is a schematic layout drawing of first electrodes, charge storageelectrodes, and transistors of control units included in the imagingelements of Embodiment 1.

FIG. 6 is a schematic layout drawing of the first electrodes and thecharge storage electrodes included in the imaging elements of Embodiment1.

FIG. 7 is a schematic layout drawing of a modified example (ModifiedExample 1 of Embodiment 1) of the first electrodes and the chargestorage electrodes included in the imaging elements of Embodiment 1.

FIG. 8 is a diagram schematically illustrating a state of potential ineach section during operation of the imaging element of Embodiment 1.

FIGS. 9A, 9B, and 9C are equivalent circuit diagrams of imaging elementsand stacked imaging elements of Embodiment 1, Embodiment 11, andEmbodiment 12 for describing each section of FIG. 8 (Embodiment 1), FIG.51 (Embodiment 11), and FIG. 58 (Embodiment 12).

FIG. 10 is a conceptual diagram of a solid-state imaging apparatus ofEmbodiment 1.

FIG. 11 is an equivalent circuit diagram of a modified example (ModifiedExample 2 of Embodiment 1) of the imaging element and the stackedimaging element of Embodiment 1.

FIG. 12 is a schematic layout drawing of the first electrodes, thecharge storage electrodes, and the transistors of the control unitsincluded in the modified example (Modified Example 2 of Embodiment 1) ofthe imaging elements of Embodiment 1 illustrated in FIG. 11 .

FIG. 13 is a schematic layout drawing of a modified example (ModifiedExample 3 of Embodiment 1) of the first electrodes and the chargestorage electrodes included in the imaging elements of Embodiment 1.

FIGS. 14A and 14B are schematic layout drawings of a modified example(Modified Example 4 of Embodiment 1) of the first electrodes and thecharge storage electrodes included in the imaging elements of Embodiment1.

FIGS. 15A and 15B are schematic layout drawings of a modified example(Modified Example 5 of Embodiment 1) of the first electrodes and thecharge storage electrodes included in the imaging elements of Embodiment1.

FIG. 16A is a schematic cross-sectional view taken along a one-dot chainline B-B of FIG. 15B in Modified Example 5 of Embodiment 1 illustratedin FIG. 15B, and FIG. 16B is a schematic cross-sectional view takenalong a one-dot chain line A-A of FIG. 15A when a charge movementcontrol electrode is replaced with a discharge electrode in ModifiedExample 5 of Embodiment 1 illustrated in FIG. 15A.

FIGS. 17A and 17B are schematic cross-sectional views of part of imagingelements of Embodiment 2 (two imaging elements arranged side by side).

FIGS. 18A and 18B are schematic cross-sectional views of part of imagingelements of Embodiment 3 (two imaging elements arranged side by side).

FIG. 19 is a schematic plan view of part of the imaging elements ofEmbodiment 3 (2×2 imaging elements arranged side by side).

FIG. 20 is a schematic plan view of part of a modified example (ModifiedExample 1 of Embodiment 3) of the imaging elements of Embodiment 3 (2×2imaging elements arranged side by side).

FIGS. 21A and 21B are diagrams schematically illustrating a change inthe potential inside a photoelectric conversion layer in the imagingelement of Embodiment 1 provided with the charge storage electrode onthe lower side of the photoelectric conversion layer and a change in thepotential inside the photoelectric conversion layer in the imagingelement of Embodiment 3 provided with the charge storage electrode onthe upper side of the photoelectric conversion layer.

FIGS. 22A and 22B are schematic plan views of part of a modified example(Modified Example 2 of Embodiment 3) of the imaging elements ofEmbodiment 3.

FIGS. 23A, 23B, and 23C are schematic plan views of part of a modifiedexample (Modified Example 3 of Embodiment 3) of the imaging elements ofEmbodiment 3.

FIGS. 24A and 24B are schematic cross-sectional views of part ofmodified examples (Modified Example 4A and Modified Example 4B ofEmbodiment 3) of the imaging elements of Embodiment 3 (two imagingelements arranged side by side).

FIGS. 25A and 25B are schematic plan views of part of the modifiedexample (Modified Example 4A of Embodiment 3) of the imaging elements ofEmbodiment 3.

FIGS. 26A and 26B are schematic plan views of part of the modifiedexample (Modified Example 4B of Embodiment 3) of the imaging elements ofEmbodiment 3.

FIGS. 27A and 27B are schematic plan views of part of a modified example(Modified Example 4C of Embodiment 3) of the imaging elements ofEmbodiment 3.

FIGS. 28A and 28B are schematic plan views of part of a modified example(Modified Example 4D of Embodiment 3) of the imaging elements ofEmbodiment 3.

FIGS. 29A, 29B, and 29C are diagrams schematically illustrating statesof the potential in each section (during charge transfer) in ModifiedExample 4B of Embodiment 3, Modified Example 4C of Embodiment 3, andModified Example 4D of Embodiment 3, respectively.

FIG. 30 is a schematic cross-sectional view of part of imaging elementsof Embodiment 4 (two imaging elements arranged side by side).

FIG. 31 is a schematic cross-sectional view of part of a modifiedexample of the imaging elements of Embodiment 4 (two imaging elementsarranged side by side).

FIG. 32 is a schematic cross-sectional view of part of another modifiedexample of the imaging elements of Embodiment 4 (two imaging elementsarranged side by side).

FIG. 33 is a schematic cross-sectional view of part of yet anothermodified example of the imaging elements of Embodiment 4 (two imagingelements arranged side by side).

FIG. 34 is a schematic cross-sectional view of part of imaging elementsof Embodiment 5 (two imaging elements arranged side by side).

FIG. 35 is a schematic cross-sectional view of part of a modifiedexample of the imaging elements of Embodiment 5 (two imaging elementsarranged side by side).

FIG. 36 is a schematic cross-sectional view of part of another modifiedexample of the imaging elements of Embodiment 5 (two imaging elementsarranged side by side).

FIG. 37 is a schematic cross-sectional view of part of imaging elementsof Embodiment 6 (two imaging elements arranged side by side).

FIG. 38 is a schematic cross-sectional view of part of a modifiedexample of the imaging elements of Embodiment 6 (two imaging elementsarranged side by side).

FIG. 39 is a schematic cross-sectional view of part of imaging elementsof Embodiment 7 (two imaging elements arranged side by side).

FIG. 40 is a schematic cross-sectional view of part of imaging elementsof Embodiment 8 (two imaging elements arranged side by side).

FIG. 41 is a schematic cross-sectional view of part of a modifiedexample of the imaging elements of Embodiment 8 (two imaging elementsarranged side by side).

FIG. 42 is a schematic partial cross-sectional view of an imagingelement and a stacked imaging element of Embodiment 9.

FIG. 43 is a schematic partial cross-sectional view of an imagingelement and a stacked imaging element of Embodiment 10.

FIG. 44 is a schematic partial cross-sectional view of a modifiedexample of the imaging element and the stacked imaging element ofEmbodiment 10.

FIG. 45 is a schematic partial cross-sectional view of another modifiedexample of the imaging element of Embodiment 10.

FIG. 46 is a schematic partial cross-sectional view of yet anothermodified example of the imaging element of Embodiment 10.

FIG. 47 is a schematic partial cross-sectional view of part of animaging element and a stacked imaging element of Embodiment 11.

FIG. 48 is an equivalent circuit diagram of the imaging element and thestacked imaging element of Embodiment 11.

FIG. 49 is an equivalent circuit diagram of the imaging element and thestacked imaging element of Embodiment 11.

FIG. 50 is a schematic layout drawing of the first electrodes, transfercontrol electrodes, the charge storage electrodes, and the transistorsof the control units included in the imaging elements of Embodiment 11.

FIG. 51 is a diagram schematically illustrating a state of potential ineach section during operation of the imaging element of Embodiment 11.

FIG. 52 is a diagram schematically illustrating a state of potential ineach section during another operation of the imaging element ofEmbodiment 11.

FIG. 53 is a schematic layout drawing of the first electrodes, thetransfer control electrodes, the charge storage electrodes, and thetransistors of the control units included in a modified example of theimaging elements of Embodiment 11.

FIG. 54 is a schematic partial cross-sectional view of part of animaging element and a stacked imaging element of Embodiment 12.

FIG. 55 is an equivalent circuit diagram of the imaging element and thestacked imaging element of Embodiment 12.

FIG. 56 is an equivalent circuit diagram of the imaging element and thestacked imaging element of Embodiment 12.

FIG. 57 is a schematic layout drawing of the first electrodes, thecharge storage electrodes, and the transistors of the control unitsincluded in the imaging elements of Embodiment 12.

FIG. 58 is a diagram schematically illustrating a state of potential ineach section during operation of the imaging element of Embodiment 12.

FIG. 59 is a diagram schematically illustrating a state of potential ineach section during another operation (during charge transfer) of theimaging element of Embodiment 12.

FIG. 60 is a schematic layout drawing of the first electrodes and thecharge storage electrodes included in a modified example of the imagingelements of Embodiment 12.

FIG. 61 is a schematic partial cross-sectional view of an imagingelement and a stacked imaging element of Embodiment 13.

FIG. 62 is an enlarged schematic partial cross-sectional view of a partwhere the charge storage electrode, the photoelectric conversion layer,and a second electrode are stacked in the imaging element of Embodiment13.

FIG. 63 is schematic layout drawing of the first electrodes, the chargestorage electrodes, and the transistors of the control units included ina modified example of the imaging elements of Embodiment 13.

FIG. 64 is an enlarged schematic partial cross-sectional view of thepart where the charge storage electrode, the photoelectric conversionlayer, and the second electrode are stacked in the imaging element ofEmbodiment 14.

FIG. 65 is a schematic partial cross-sectional view of an imagingelement and a stacked imaging element of Embodiment 15.

FIG. 66 is a schematic partial cross-sectional view of imaging elementsand stacked imaging elements of Embodiments 16 and 17.

FIGS. 67A and 67B are schematic plan views of charge storage electrodesegments in Embodiment 17.

FIGS. 68A and 68B are schematic plan views of the charge storageelectrode segments in Embodiment 17.

FIG. 69 is a schematic layout drawing of the first electrodes, thecharge storage electrodes, and the transistors of the control unitsincluded in the imaging elements of Embodiment 17.

FIG. 70 is a schematic layout drawing of the first electrodes and thecharge storage electrodes included in a modified example of the imagingelements of Embodiment 17.

FIG. 71 is a schematic partial cross-sectional view of imaging elementsand stacked imaging elements of Embodiments 18 and 17.

FIGS. 72A and 72B are schematic plan views of the charge storageelectrode segments in Embodiment 18.

FIG. 73 is a schematic plan view of the first electrodes and the chargestorage electrode segments in a solid-state imaging apparatus ofEmbodiment 19.

FIG. 74 is a schematic plan view of the first electrodes and the chargestorage electrode segments in a first modified example of thesolid-state imaging apparatus of Embodiment 19.

FIG. 75 is a schematic plan view of the first electrodes and the chargestorage electrode segments in a second modified example of thesolid-state imaging apparatus of Embodiment 19.

FIG. 76 is a schematic plan view of the first electrodes and the chargestorage electrode segments in a third modified example of thesolid-state imaging apparatus of Embodiment 19.

FIG. 77 is a schematic plan view of the first electrodes and the chargestorage electrode segments in a fourth modified example of thesolid-state imaging apparatus of Embodiment 19.

FIG. 78 is a schematic plan view of the first electrodes and the chargestorage electrode segments in a fifth modified example of thesolid-state imaging apparatus of Embodiment 19.

FIG. 79 is a schematic plan view of the first electrodes and the chargestorage electrode segments in a sixth modified example of thesolid-state imaging apparatus of Embodiment 19.

FIG. 80 is a schematic plan view of the first electrodes and the chargestorage electrode segments in a seventh modified example of thesolid-state imaging apparatus of Embodiment 19.

FIG. 81 is a schematic plan view of the first electrodes and the chargestorage electrode segments in an eighth modified example of thesolid-state imaging apparatus of Embodiment 19.

FIG. 82 is a schematic plan view of the first electrodes and the chargestorage electrode segments in a ninth modified example of thesolid-state imaging apparatus of Embodiment 19.

FIGS. 83A, 83B, and 83C are charts illustrating examples of reading anddriving in an imaging element block of Embodiment 19.

FIG. 84 is a schematic plan view of the first electrodes and the chargestorage electrode segments in a solid-state imaging apparatus ofEmbodiment 20.

FIG. 85 is a schematic plan view of the first electrodes and the chargestorage electrode segments in a modified example of the solid-stateimaging apparatus of Embodiment 20.

FIG. 86 is a schematic plan view of the first electrodes and the chargestorage electrode segments in a modified example of the solid-stateimaging apparatus of Embodiment 20.

FIG. 87 is a schematic plan view of the first electrodes and the chargestorage electrode segments in a modified example of the solid-stateimaging apparatus of Embodiment 20.

FIG. 88 is a schematic partial cross-sectional view of another modifiedexample of the imaging element and the stacked imaging element ofEmbodiment 1.

FIG. 89 is a schematic partial cross-sectional view of yet anothermodified example of the imaging element and the stacked imaging elementof Embodiment 1.

FIGS. 90A, 90B, and 90C are enlarged schematic partial cross-sectionalviews of the parts of the first electrodes and the like in yet anothermodified example of the imaging element and the stacked imaging elementof Embodiment 1.

FIG. 91 is a schematic partial cross-sectional view of yet anothermodified example of the imaging element and the stacked imaging elementof Embodiment 1.

FIG. 92 is a schematic partial cross-sectional view of yet anothermodified example of the imaging element and the stacked imaging elementof Embodiment 1.

FIG. 93 is a schematic partial cross-sectional view of yet anothermodified example of the imaging element and the stacked imaging elementof Embodiment 1.

FIG. 94 is a schematic partial cross-sectional view of another modifiedexample of the imaging element and the stacked imaging element ofEmbodiment 11.

FIG. 95 is a schematic partial cross-sectional view of yet anothermodified example of the imaging element and the stacked imaging elementof Embodiment 1.

FIG. 96 is a schematic partial cross-sectional view of yet anothermodified example of the imaging element and the stacked imaging elementof Embodiment 1.

FIG. 97 is an enlarged schematic partial cross-sectional view of thepart where the charge storage electrode, the photoelectric conversionlayer, and the second electrode are stacked in a modified example of theimaging element of Embodiment 13.

FIG. 98 is an enlarged schematic partial cross-sectional view of thepart where the charge storage electrode, the photoelectric conversionlayer, and the second electrode are stacked in a modified example of theimaging element of Embodiment 14.

FIGS. 99A and 99B are equivalent circuit diagrams of modified examplesof the transistors that drive the charge storage electrodes.

FIGS. 100A and 100B are diagrams schematically illustrating waveforms ofpulses that drive the transistors in the equivalent circuits illustratedin FIGS. 99A and 99B.

FIG. 101 is a conceptual diagram of an example in which the solid-stateimaging apparatus including the imaging elements and the stacked imagingelements of the present disclosure is used in an electronic device(camera).

FIG. 102 is a conceptual diagram of a conventional stacked imagingelement (stacked solid-state imaging apparatus).

DESCRIPTION OF EMBODIMENTS

Hereinafter, the present disclosure will be described based onEmbodiments with reference to the drawings. However, the presentdisclosure is not limited to Embodiments, and various values andmaterials in Embodiments are illustrative. Note that the presentdisclosure will be described in the following order.

-   -   1. Description in General Regarding Imaging Elements and Stacked        Imaging Elements According to First to Ninth Aspects of Present        Disclosure and Solid-State Imaging Apparatuses According to        First and Second Aspects of Present Disclosure    -   2. Embodiment 1 (Imaging Elements According to First to Third        Aspects of Present Disclosure, Stacked Imaging Element of        Present Disclosure, and Solid-State Imaging Apparatus According        to Second Aspect of Present Disclosure)    -   3. Embodiment 2 (Imaging Element According to Second Aspect of        Present Disclosure)    -   4. Embodiment 3 (Imaging Element According to Fourth Aspect of        Present Disclosure)    -   5. Embodiment 4 (Imaging Element According to Fifth Aspect of        Present Disclosure)    -   6. Embodiment 5 (Imaging Element According to Sixth Aspect of        Present disclosure)    -   7. Embodiment 6 (Imaging Element According to Seventh Aspect of        Present Disclosure)    -   8. Embodiment 7 (Imaging Element According to Eighth Aspect of        Present Disclosure)    -   9. Embodiment 8 (Imaging Element According to Ninth Aspect of        Present Disclosure)    -   10. Embodiment 9 (Modification of Imaging Elements of        Embodiments 1 to 8)    -   11. Embodiment 10 (Modification of Embodiments 1 to 9,        Solid-State Imaging Apparatus According to First Aspect of        Present Disclosure)    -   12. Embodiment 11 (Modification of Embodiments 1 to 10, Imaging        Element Including Transfer Control Electrode)    -   13. Embodiment 12 (Modification of Embodiments 1 to 11, Imaging        Element Including a Plurality of Charge Storage Electrode        Segments)    -   14. Embodiment 13 (Imaging Elements of First Configuration and        Sixth Configuration)    -   15. Embodiment 14 (Imaging Elements of Second configuration and        Sixth configuration of Present Disclosure)    -   16. Embodiment 15 (Imaging Element of Third Configuration)    -   17. Embodiment 16 (Imaging Element of Fourth Configuration)    -   18. Embodiment 17 (Imaging Element of Fifth Configuration)    -   19. Embodiment 18 (Imaging Element of Sixth Configuration)    -   20. Embodiment 19 (Solid-State Imaging Apparatuses of First and        Second Configurations)    -   21. Embodiment 20 (Modification of Embodiment 19)    -   22. Others

<Description in General Regarding Imaging Elements and Stacked ImagingElements According to First to Ninth Aspects of Present Disclosure andSolid-State Imaging Apparatuses According to First and Second Aspects ofPresent Disclosure>

In the following description, a “region of photoelectric conversionlayer positioned between first electrode and charge storage electrode”will be referred to as a “region-A of photoelectric conversion layer”for convenience, and a “region of photoelectric conversion layerpositioned between imaging element and adjacent imaging element” will bereferred to as a “region-B of photoelectric conversion layer” forconvenience. In addition, a “region of insulating layer positionedbetween first electrode and charge storage electrode” will be referredto as a “region-A of insulating layer” for convenience, and a “region ofinsulating layer positioned between imaging element and adjacent imagingelement” will be referred to as a “region-B of insulating layer” forconvenience. The region-B of the photoelectric conversion layercorresponds to the region-B of the insulating layer. Furthermore, a“region between first electrode and charge storage electrode” will bereferred to as a “region-a” for convenience, and a “region betweenimaging element and adjacent imaging element” will be referred to as a“region-b” for convenience. In the region-a, the region-A of thephotoelectric conversion layer corresponds to the region-A of theinsulating layer. In the region-b, the region-B of the photoelectricconversion layer corresponds to the region-B of the insulating layer.

In the imaging element and the like according to the first and secondaspects of the present disclosure, the region-B of the photoelectricconversion layer denotes, in other words, the part of the photoelectricconversion layer positioned above the part of the insulating layer(region-B of insulating layer) in the region (region-b) between thecharge storage electrode and the charge storage electrode included inadjacent imaging elements.

In the imaging element and the like according to the third aspect of thepresent disclosure, the charge movement control electrode is formed inthe region facing the region-B of the photoelectric conversion layerthrough the insulating layer. In other words, the charge movementcontrol electrode is formed below the part of the insulating layer(region-B of insulating layer) in the region (region-b) between thecharge storage electrode and the charge storage electrode included inadjacent imaging elements. The charge movement control electrode isprovided apart from the charge storage electrodes. Alternatively, inother words, the charge movement control electrode is provided aroundthe charge storage electrode and apart from the charge storageelectrode, and the charge movement control electrode is arranged to facethe region-B of the photoelectric conversion layer through theinsulating layer.

In the imaging element and the like according to the fourth aspect ofthe present disclosure, the charge movement control electrode is formed,in place of the second electrode, over the region of the photoelectricconversion layer positioned between the imaging element and the adjacentimaging element. The charge movement control electrode is provided apartfrom the second electrode. In other words,

-   -   [A] the second electrode may be provided for each imaging        element, and the charge movement control electrode may be        provided around at least part of the second electrode, apart        from the second electrode, over the region-B of the        photoelectric conversion layer,    -   [B] the second electrode may be provided for each imaging        element, the charge movement control electrode may be provided        around at least part of the second electrode or apart from the        second electrode, and part of the charge storage electrode may        exist on the lower side of the charge movement control        electrode, or    -   [C] the second electrode may be provided for each imaging        element, the charge movement control electrode may be provided        around at least part of the second electrode or apart from the        second electrode, part of the charge storage electrode may exist        on the lower side of the charge movement control electrode, and        furthermore, the charge movement control electrode in the        imaging element and the like according to the third aspect may        be formed on the lower side of the charge movement control        electrode. The potential generated by coupling of the charge        movement control electrode and the second electrode is applied        in some cases to the region of the photoelectric conversion        layer positioned below the region between the charge movement        control electrode and the second electrode.

In the imaging element and the like according to the fifth aspect of thepresent disclosure, an insulating material included in the region-a(referred to as “insulating material-A” for convenience) may planarlyfill all of the region-a, may fill part of the region-a, may include theregion-a to above an edge portion of the charge storage electrode (edgeportion facing the region-a), or may be formed over part or all of thecharge storage electrode. Alternatively, the insulating material mayfill all of the region-a in the thickness direction of the insulatinglayer or may fill part of the region-a. An insulating material (referredto as “insulating material-B” for convenience) included in the region-Bof the insulating layer (region-b) may planarly fill all of the region-Bof the insulating layer (region-b), may fill part of the region-B of theinsulating layer (region-b), or may include the region-B of theinsulating layer (region-b) to an edge portion of the charge storageelectrode (edge portion facing the region-B of the insulating layer(region-b)). Alternatively, the insulating material may fill all of theregion-B of the insulating layer (region-b) in the thickness directionof the insulating layer or may fill part of the region-B of theinsulating layer (region-b).

In the imaging element and the like according to the sixth aspect of thepresent disclosure, the thickness of the region-A of the insulatinglayer is thinner than the thickness of the region-B of the insulatinglayer. All of the regions of the region-A of the insulating layer andthe region-B of the insulating layer may satisfy the requirement, orpart of the regions may satisfy the requirement.

In the imaging element and the like according to the seventh aspect ofthe present disclosure, the thickness of the region-A of thephotoelectric conversion layer is thicker than the thickness of theregion-B of the photoelectric conversion layer. All of the regions ofthe region-A of the photoelectric conversion layer and the region-B ofthe photoelectric conversion layer may satisfy the requirement, or partof the regions may satisfy the requirement. The thickness of theregion-B of the photoelectric conversion layer may be “0.” That is, theregion of the photoelectric conversion layer positioned between theimaging element and the adjacent imaging element may not exist dependingon the case.

In the imaging element and the like according to the eighth aspect ofthe present disclosure, the fixed charge amount in the region of theinterface between the region-A of the photoelectric conversion layer andthe region-A of the insulating layer is less than the fixed chargeamount in the region of the interface between the region-B of thephotoelectric conversion layer and the region-B of the insulating layer.All of the region of the interface between the region-A of thephotoelectric conversion layer and the region-A of the insulating layerand the region of the interface between the region-B of thephotoelectric conversion layer and the region-B of the insulating layermay satisfy the requirement, or part of the regions may satisfy therequirement.

In the imaging element and the like according to the ninth aspect of thepresent disclosure, the value of the charge mobility in the region-A ofthe photoelectric conversion layer (referred to as “charge mobility-A”for convenience) is larger than the value of the charge mobility in theregion-B of the photoelectric conversion layer (referred to as “chargemobility-B” for convenience). All of the regions of the region-A of thephotoelectric conversion layer and the region-B of the photoelectricconversion layer may satisfy the requirement, or part of the regions maysatisfy the requirement. Alternatively, the region of the photoelectricconversion layer with charge mobility-A may extend over part or all ofthe charge storage electrode.

The imaging element and the like according to the third aspect of thepresent disclosure may further include a control unit provided on asemiconductor substrate and including a drive circuit, in which

-   -   the first electrode, the second electrode, the charge storage        electrode, and the charge movement control electrode are        connected to the drive circuit,    -   in a charge storage period, the drive circuit applies a        potential V₁₁ to the first electrode, applies a potential Via to        the charge storage electrode, and applies a potential V₁₃ to the        charge movement control electrode, and charge is stored in the        photoelectric conversion layer, and    -   in a charge transfer period, the drive circuit applies a        potential V₂₁ to the first electrode, applies a potential V₂₂ to        the charge storage electrode, and applies a potential V₂₃ to the        charge movement control electrode, and the charge stored in the        photoelectric conversion layer is read out to the control unit        through the first electrode, where    -   in a case where the potential of the first electrode is higher        than the potential of the second electrode,    -   V₁₂>V₁₁, V₁₂>V₁₃, and V₂₁>V₂₂>V₂₃ hold, and        in a case where the potential of the first electrode is lower        than the potential of the second electrode,    -   V₁₂≤V₁₁, V₁₂<V₁₃, and V₂₁<V₂₂<V₂₃ hold. The charge movement        control electrode may be formed in the same level as the first        electrode or the charge storage electrode or may be formed in a        different level.

The imaging element and the like according to the fourth aspect of thepresent disclosure may further include a control unit provided on asemiconductor substrate and including a drive circuit, in which

-   -   the first electrode, the second electrode, the charge storage        electrode, and the charge movement control electrode are        connected to the drive circuit,    -   in a charge storage period, the drive circuit applies a        potential V₂′ to the second electrode and applies a potential        V₁₃′ to the charge movement control electrode, and charge is        stored in the photoelectric conversion layer, and    -   in a charge transfer period, the drive circuit applies a        potential V₂″ to the second electrode and applies a potential        V₂₃″ to the charge movement control electrode, and the charge        stored in the photoelectric conversion layer is read out to the        control unit through the first electrode, where    -   in a case where the potential of the first electrode is higher        than the potential of the second electrode,    -   V₂′>V₁₃′ and V₂″>V₂₃″ hold, and        in a case where the potential of the first electrode is lower        than the potential of the second electrode,    -   V₂′≤V₁₃′ and V₂″≤V₂₃″ hold. The charge movement control        electrode is formed in the same level as the second electrode.

Each of the imaging elements and the like of the present disclosureincluding the preferred modes described above may further include asemiconductor substrate, in which the photoelectric conversion unit isarranged on an upper side of the semiconductor substrate. Note that thefirst electrode, the charge storage electrode, the second electrode, andvarious electrodes are connected to a drive circuit described later.

Furthermore, each of the imaging elements and the like of the presentdisclosure including various preferred modes described above may furtherinclude a transfer control electrode (charge transfer electrode)arranged between the first electrode and the charge storage electrode,arranged apart from the first electrode and the charge storageelectrode, and arranged to face the photoelectric conversion layerthrough the insulating layer. Note that the imaging element and the likeof the present disclosure in the mode will be referred to as an “imagingelement and the like of the present disclosure including the transfercontrol electrode” for convenience in some cases. In addition, theimaging element and the like of the present disclosure including thetransfer control electrode may further include

-   -   a control unit provided on the semiconductor substrate and        including the drive circuit, in which    -   the first electrode, the charge storage electrode, and the        transfer control electrode are connected to the drive circuit,    -   in the charge storage period, the drive circuit applies a        potential V₁₁ to the first electrode, applies a potential V₁₂ to        the charge storage electrode, and applies a potential V₁₄ to the        transfer control electrode, and charge is stored in the        photoelectric conversion layer, and    -   in the charge transfer period, the drive circuit applies a        potential V₂₁ to the first electrode, applies a potential V₂₂ to        the charge storage electrode, and applies a potential V₂₄ to the        transfer control electrode, and the charge stored in the        photoelectric conversion layer is read out to the control unit        through the first electrode, where    -   in a case where the potential of the first electrode is higher        than the potential of the second electrode,    -   V₁₂>V₁₄ and V₂₂≤V₂₄≤V₂₁ hold, and    -   in a case where the potential of the first electrode is lower        than the potential of the second electrode,    -   V₁₂<V₁₄ and V₂₂>V₂₄>V₂₁ hold.

Furthermore, in each of the imaging elements and the like of the presentdisclosure including various preferred modes described above, the chargestorage electrode may include a plurality of charge storage electrodesegments. Note that the imaging element and the like of the presentdisclosure in the mode will be referred to as an “imaging element andthe like of the present disclosure including the plurality of chargestorage electrode segments” for convenience in some cases. The number ofcharge storage electrode segments can be equal to or greater than two.Furthermore, in a case where a different potential is applied to each ofN charge storage electrode segments in the imaging element and the likeof the present disclosure including the plurality of charge storageelectrode segments,

-   -   the potential applied to a charge storage electrode segment        (first photoelectric conversion unit segment) positioned at a        place closest to the first electrode may be higher than the        potential applied to a charge storage electrode segment (Nth        photoelectric conversion unit segment) positioned at a place        farthest from the first electrode in the charge transfer period        in a case where the potential of the first electrode is higher        than the potential of the second electrode, and    -   the potential applied to the charge storage electrode segment        (first photoelectric conversion unit segment) positioned at a        place closest to the first electrode may be lower than the        potential applied to the charge storage electrode segment (Nth        photoelectric conversion unit segment) positioned at a place        farthest from the first electrode in the charge transfer period        in a case where the potential of the first electrode is lower        than the potential of the second electrode.

Furthermore, in each of the imaging elements and the like of the presentdisclosure including various preferred modes described above, the sizeof the charge storage electrode may be larger than the size of the firstelectrode. Although not limited, it is preferable to satisfy

4≤S ₁ ′/S ₁,

-   -   where S₁′ is the area of the charge storage electrode, and S₁ is        the area of the first electrode.

In the imaging element according to the second aspect of the presentdisclosure, a width W_(A) of the region-A of the photoelectricconversion layer is narrower than a width W_(B) of the region-B of thephotoelectric conversion layer, and an example of the value of(W_(A)/W_(B)) includes

½≤(W _(A) /W _(B))<1.

In the imaging element according to the fifth aspect of the presentdisclosure, a specific example of the insulating material-A includesSiN, and a specific example of the insulating material-B includes Sift.

In the imaging element according to the sixth aspect of the presentdisclosure, a thickness t_(In-A) of the region-A of the insulating layeris thinner than a thickness t_(In-B) of the region-B of the insulatinglayer, and an example of the value of (t_(In-A)/t_(In-B)) includes

½≤(t _(In-A) /t _(In-B))<1.

In the imaging element according to the seventh aspect of the presentdisclosure, a thickness t_(Pc-A) of the region-A of the photoelectricconversion layer is thicker than a thickness t_(Pc-B) of the region-B ofthe photoelectric conversion layer, and an example of the value of(t_(Pc-A)/t_(Pc-B)) includes

1<(t _(Pc-A) /t _(Pc-B))≤2.

In the imaging element according to the eighth aspect of the presentdisclosure, a fixed charge amount FC_(A) in the region of the interfacebetween the region-A of the photoelectric conversion layer and theregion-A of the insulating layer is less than a fixed charge amountFC_(B) in the region of the interface between the region-B of thephotoelectric conversion layer and the region-B of the insulating layer.An example of the value of (FC_(A)/FC_(B)) includes

1/10≤(FC_(A)/FC_(B))<1.

Here, the fixed charge amount in the region of the interface between thephotoelectric conversion layer and the insulating layer can becontrolled based on a method of, for example, depositing a thin filmwith fixed charge.

In the imaging element according to the ninth aspect of the presentdisclosure, a value CT_(A) of the charge mobility in the region-A of thephotoelectric layer is larger than a value CT_(B) of the charge mobilityin the region-B of the photoelectric conversion layer. An example of thevalue of (CT_(A)/CT_(B)) includes

1<(CT _(A) /CT _(B))≤1×10².

The material included in the region-A of the photoelectric conversionlayer and the material included in the region-B of the photoelectricconversion layer can be appropriately selected from the materialsincluded in the photoelectric conversion layer. Alternatively, part ofthe photoelectric conversion layer may have a two-layer configuration ofan upper layer/a lower layer. The upper layer of the region-A of thephotoelectric conversion layer and the upper layer of the region-B ofthe photoelectric conversion layer and the part of the photoelectricconversion layer positioned on the upper side of the charge storageelectrode may contain the same material (referred to as “upper layerconstituent material” for convenience). The lower layer of the region-Aof the photoelectric conversion layer and the lower layer of the part ofthe photoelectric conversion layer positioned on the upper side of thecharge storage electrode may contain the same material (referred to as“lower layer constituent material” for convenience). The upper layerconstituent material and the lower layer constituent material may bedifferent.

In this way, the lower layer of the photoelectric conversion layer (willbe referred to as “lower semiconductor layer” in some cases) can beprovided to prevent, for example, recombination during charge storage.This can also increase the charge transfer efficiency of the chargestored in the photoelectric conversion layer to the first electrode.Furthermore, the charge generated in the photoelectric conversion layercan be temporarily held to control the timing and the like of thetransfer. In addition, the generation of dark current can be suppressed.Note that the upper layer of the photoelectric conversion layer will bereferred to as an “upper photoelectric conversion layer” in some cases.

The second electrode positioned on the light incident side may be sharedby a plurality of imaging elements except for the imaging element andthe like according to the fourth aspect of the present disclosure. Thatis, the second electrode can be a so-called solid electrode. In theimaging element and the like of the present disclosure, thephotoelectric conversion layer is shared by a plurality of imagingelements. That is, one photoelectric conversion layer is formed in aplurality of imaging elements.

Furthermore, in the imaging elements and the like of the presentdisclosure including various preferred modes described above, the firstelectrode may extend in an opening portion provided in the insulatinglayer and may be connected to the photoelectric conversion layer.Alternatively, the photoelectric conversion layer may extend in anopening portion provided in the insulating layer and may be connected tothe first electrode. In this case,

-   -   an edge portion of a top surface of the first electrode may be        covered by the insulating layer,    -   the first electrode may be exposed on a bottom surface of the        opening portion, and    -   a side surface of the opening portion may be sloped to extend        from a first surface toward a second surface, where the first        surface is a surface of the insulating layer in contact with the        top surface of the first electrode, and the second surface is a        surface of the insulating layer in contact with a part of the        photoelectric conversion layer facing the charge storage        electrode. Furthermore, the side surface of the opening portion        sloped to extend from the first surface toward the second        surface may be positioned on a charge storage electrode side.        Note that another layer may also be formed between the        photoelectric conversion layer and the first electrode (for        example, a material layer suitable for charge storage may be        formed between the photoelectric conversion layer and the first        electrode).

Furthermore, in the imaging elements and the like of the presentdisclosure including various preferred modes described above,

-   -   at least a floating diffusion layer and an amplification        transistor included in the control unit may be provided on the        semiconductor substrate, and    -   the first electrode may be connected to the floating diffusion        layer and a gate portion of the amplification transistor. In        addition, in this case, furthermore,    -   a reset transistor and a selection transistor included in the        control unit may be further provided on the semiconductor        substrate,    -   the floating diffusion layer may be connected to one        source/drain region of the reset transistor,    -   one source/drain region of the amplification transistor may be        connected to one source/drain region of the selection        transistor, and another source/drain region of the selection        transistor may be connected to a signal line.

Alternatively, modified examples of the imaging elements and the like ofthe present disclosure including various preferred modes described aboveinclude imaging elements of first to sixth configurations describedbelow. That is, in each of the imaging elements of the first to sixthconfigurations in the imaging elements and the like of the presentdisclosure including various preferred modes described above,

-   -   the photoelectric conversion unit includes N (where N≥2)        photoelectric conversion unit segments,    -   the photoelectric conversion layer includes N photoelectric        conversion layer segments,    -   the insulating layer includes N insulating layer segments,    -   in each of the imaging elements of the first to third        configurations, the charge storage electrode includes N charge        storage electrode segments,    -   in each of the imaging elements of the fourth and fifth        configurations, the charge storage electrode includes N charge        storage electrode segments arranged apart from each other,    -   an nth (where n=1, 2, 3, . . . N) photoelectric conversion unit        segment includes an nth charge storage electrode segment, an nth        insulating layer segment, and an nth photoelectric conversion        layer segment, and    -   the larger the value of n of the photoelectric conversion unit        segment, the farther the position of the photoelectric        conversion unit segment from the first electrode.

Furthermore, in the imaging element of the first configuration, thethicknesses of the photoelectric conversion layer segments graduallychange from the first photoelectric conversion unit segment to the Nthphotoelectric conversion unit segment. Furthermore, in the imagingelement of the second configuration, the thicknesses of thephotoelectric conversion layer segments gradually change from the firstphotoelectric conversion unit segment to the Nth photoelectricconversion unit segment. Furthermore, in the imaging element of thethird configuration, materials included in the insulating layer segmentsvary between adjacent photoelectric conversion unit segments.Furthermore, in the imaging element of the fourth configuration,materials included in the charge storage electrode segments vary betweenadjacent photoelectric conversion unit segments. Furthermore, in theimaging element of the fifth configuration, the areas of the chargestorage electrode segments gradually decrease from the firstphotoelectric conversion unit segment to the Nth photoelectricconversion unit segment. Note that the areas may continuously decreaseor may decrease step-wise.

Alternatively, in the imaging element of the sixth configuration in theimaging elements and the like of the present disclosure includingvarious preferred modes described above, a cross-sectional area of astacked part of the charge storage electrode, the insulating layer, andthe photoelectric conversion layer when the stacked part is cut in a YZvirtual plane changes in accordance with the distance from the firstelectrode, where a Z direction is a stacking direction of the chargestorage electrode, the insulating layer, and the photoelectricconversion layer, and an X direction is a direction away from the firstelectrode. Note that the change in the cross-sectional area may be acontinuous change or a step-wise change.

In each of the imaging elements of the first and second configurations,the N photoelectric conversion layer segments are continuously provided,the N insulating layer segments are also continuous provided, and the Ncharge storage electrode segments are also continuously provided. Ineach of the imaging elements of the third to fifth configurations, the Nphotoelectric conversion layer segments are continuously provided.Furthermore, in each of the imaging elements of the fourth and fifthconfigurations, the N insulating layer segments are continuouslyprovided. On the other hand, in the imaging element of the thirdconfiguration, the N insulating layer segments are provided tocorrespond to the photoelectric conversion unit segments, respectively.Furthermore, in each of the imaging elements of the fourth and fifthconfigurations and in the imaging element of the third configurationdepending on the case, the N charge storage electrode segments areprovided to correspond to the photoelectric conversion unit segments,respectively. Furthermore, in each of the imaging elements of the firstto sixth configurations, the same potential is applied to all of thecharge storage electrode segments. Alternatively, in each of the imagingelements of the fourth and fifth configurations and in the imagingelement of the third configuration depending on the case, a differentpotential may be applied to each of the N charge storage electrodesegments.

In each of the imaging elements of the first to sixth configurations andthe stacked imaging elements and the solid-state imaging apparatuses ofthe present disclosure applying the imaging elements, the thicknesses ofthe insulating layer segments are defined, the thicknesses of thephotoelectric conversion layer segments are defined, the materialsincluded in the insulating layer segments are different, the materialsincluded in the charge storage electrode segments are different, theareas of the charge storage electrode segments are defined, or thecross-sectional areas of the stacked parts are defined. Therefore, akind of charge transfer gradient is formed, and the charge generated bythe photoelectric conversion can be more easily and certainlytransferred to the first electrode. In addition, as a result, generationof residual image or charge transfer leftover can be prevented.

A modified example of the stacked imaging element of the presentdisclosure includes a stacked imaging element including at least one ofthe imaging elements of the first to sixth configurations. In addition,a modified example of the solid-state imaging apparatus according to thefirst aspect of the present disclosure includes a solid-state imagingapparatus including a plurality of imaging elements of the first tosixth configurations. A modified example of the solid-state imagingapparatus according to the second aspect of the present disclosureincludes a solid-state imaging apparatus including a plurality ofstacked imaging elements each including at least one of the imagingelements of the first to sixth configurations.

In each of the imaging elements of the first to fifth configurations,the larger the value of n of the photoelectric conversion unit segment,the farther the position of the photoelectric conversion unit segmentfrom the first electrode. Whether the photoelectric conversion unitsegment is positioned away from the first electrode is determined on thebasis of an X direction. Furthermore, in the imaging element of thesixth configuration, the direction away from the first electrode is theX direction, and the “X direction” is defined as follows. That is, thepixel region including a plurality of arrayed imaging elements orstacked imaging elements includes a plurality of pixels arranged in atwo-dimensional array, that is, systematically arranged in the Xdirection and the Y direction. In a case where the plane shape of thepixels is rectangle, the extending direction of the side closest to thefirst electrode is the Y direction, and the direction orthogonal to theY direction is the X direction. Alternatively, in a case where the planeshape of the pixels is an arbitrary shape, the overall directionincluding the line segment or curve closest to the first electrode isthe Y direction, and the direction orthogonal to the Y direction is theX direction.

Hereinafter, the case where the potential of the first electrode ishigher than the potential of the second electrode will be describedregarding the imaging elements of the first to sixth configurations. Inthe case where the potential of the first electrode is lower than thepotential of the second electrode, it is only necessary to reverse thehigh and low of the potentials.

In the imaging element of the first configuration, the thicknesses ofthe insulating layer segments gradually change from the firstphotoelectric conversion unit segment to the Nth photoelectricconversion unit segment. The thicknesses of the insulating layersegments may gradually increase or gradually decrease. As a result, akind of charge transfer gradient is formed.

The thicknesses of the insulating layer segments can be graduallyincreased in a case where the charge to be stored is electrons. Thethicknesses of the insulating layer segments can be gradually reduced ina case where the charge to be stored is electron holes. Furthermore, inthese cases, the nth photoelectric conversion unit segment can storemore charge than the (n+1)th photoelectric conversion unit segment whenthe state shifts to |V₁₂|≥|V₁₁| in the charge storage period. A strongelectric field is applied, and this can certainly prevent the flow ofcharge from the first photoelectric conversion unit segment to the firstelectrode. Furthermore, when the state shifts to |V₂₂|<|V₂₁| in thecharge transfer period, the flow of charge from the first photoelectricconversion unit segment to the first electrode and the flow of chargefrom the (n+1)th photoelectric conversion unit segment to the nthphotoelectric conversion unit segment can be certainly secured.

In the imaging element of the second configuration, the thicknesses ofthe photoelectric conversion layer segments gradually change from thefirst photoelectric conversion unit segment to the Nth photoelectricconversion unit segment. The thicknesses of the photoelectric conversionlayer segments may gradually increase or gradually decrease. As aresult, a kind of charge transfer gradient is formed.

In the case where the charge to be stored is electrons, the thicknessesof the photoelectric conversion layer segments can be graduallyincreased. In the case where the charge to be stored is electron holes,the thicknesses of the photoelectric conversion layer segments can begradually reduced. Furthermore, when the state shifts to V₁₂≥V₁₁ in thecharge storage period in the case where the thicknesses of thephotoelectric conversion layer segments gradually increase, or when thestate shifts to V₁₂≤V₁₁ in the charge storage period in the case wherethe thicknesses of the photoelectric conversion layer segments graduallydecrease, a stronger electric field is applied to the nth photoelectricconversion unit segment than to the (n+1)th photoelectric conversionunit segment. This can certainly prevent the flow of charge from thefirst photoelectric conversion unit segment to the first electrode.Furthermore, when the state shifts to V₂₂<V₂₁ in the charge transferperiod in the case where the thicknesses of the photoelectric conversionlayer segments gradually increase, or when the state shifts to V₂₂>V₂₁in the case where the thicknesses of the photoelectric conversion layersegments gradually decrease, the flow of charge from the firstphotoelectric conversion unit segment to the first electrode and theflow of charge from the (n+1)th photoelectric conversion unit segment tothe nth photoelectric conversion unit segment can be certainly secured.

In the imaging element of the third configuration, the materialsincluded in the insulating layer segments are different in adjacentphotoelectric conversion unit segments, and as a result, a kind ofcharge transfer gradient is formed. It is preferable that the values ofthe dielectric constants of the materials included in the insulatinglayer segments gradually decrease from the first photoelectricconversion unit segment to the Nth photoelectric conversion unitsegment. Furthermore, by adopting the configuration, the nthphotoelectric conversion unit segment can store more charge than the(n+1)th photoelectric conversion unit segment when the state shifts toV₁₂>V₁₁ in the charge storage period. Furthermore, when the state shiftsto V₂₂<V₂₁ in the charge transfer period, the flow of charge from thefirst photoelectric conversion unit segment to the first electrode andthe flow of charge from the (n+1)th photoelectric conversion unitsegment to the nth photoelectric conversion unit segment can becertainly secured.

In the imaging element of the fourth configuration, the materialsincluded in the charge storage electrode segments are different inadjacent photoelectric conversion unit segments. As a result, a kind ofcharge transfer gradient is formed. It is preferable that the values ofthe work functions of the materials included in the insulating layersegments gradually increase from the first photoelectric conversion unitsegment to the Nth photoelectric conversion unit segment. Furthermore,by adopting the configuration, a potential gradient advantageous for thesignal charge transfer can be formed regardless of whether or not thevoltage is positive or negative.

In the imaging element of the fifth configuration, the areas of thecharge storage electrode segments gradually decrease from the firstphotoelectric conversion unit segment to the Nth photoelectricconversion unit segment. As a result, a kind of charge transfer gradientis formed. Therefore, when the state shifts to V₁₂>V₁₁ in the chargestorage period, the nth photoelectric conversion unit segment can storemore charge than the (n+1)th photoelectric conversion unit segment. Inaddition, when the state shifts to V₂₂<V₂₁ in the charge transferperiod, the flow of charge from the first photoelectric conversion unitsegment to the first electrode and the flow of charge from the (n+1)thphotoelectric conversion unit segment to the nth photoelectricconversion unit segment can be certainly secured.

In the imaging element of the sixth configuration, the cross-sectionalareas of the stacked parts change according to the distance from thefirst electrode. As a result, a kind of charge transfer gradient isformed. Specifically, the thicknesses of the cross sections of thestacked parts can be constant, and the widths of the cross sections ofthe stacked parts can be reduced with an increase in the distance fromthe first electrode. By adopting the configuration, as described in theimaging element of the fifth configuration, a region close to the firstelectrode can store more charge than a region far from the firstelectrode when the state shifts to V₁₂≥V₁₁ in the charge storage period.Therefore, when the state shifts to V₂₂<V₂₁ in the charge transferperiod, the flow of charge from the region close to the first electrodeto the first electrode and the flow of charge from the region far fromthe first electrode to the region close to the first electrode can becertainly secured. On the other hand, the widths of the cross sectionsof the stacked parts can be constant, and the thicknesses of the crosssections of the stacked parts, specifically, the thicknesses of theinsulating layer segments, can be gradually increased. By adopting theconfiguration, as described in the imaging element of the firstconfiguration, the region close to the first electrode can store morecharge than the region far from the first electrode when the stateshifts to V₁₂≥V₁₁ in the charge storage period as described in theimaging element of the first configuration. A strong electric field isapplied, and the flow of charge from the region close to the firstelectrode to the first electrode can be certainly prevented.Furthermore, when the state shifts to V₂₂<V₂₁ in the charge transferperiod, the flow of charge from the region close to the first electrodeto the first electrode and the flow of charge from the region far fromthe first electrode to the region close to the first electrode can becertainly secured. In addition, the thicknesses of the photoelectricconversion layer segments can be gradually increased. By adopting theconfiguration, as described in the imaging element of the secondconfiguration, a stronger electric field is applied to the region closeto the first electrode than to the region far from the first electrodewhen the state shifts to V₁₂≥V₁₁ in the charge storage period. This cancertainly prevent the flow of charge from the region close to the firstelectrode to the first electrode. Furthermore, when the state shifts toV₂₂<V₂₁ in the charge transfer period, the flow of charge from theregion close to the first electrode to the first electrode and the flowof charge from the region far from the first electrode to the regionclose to the first electrode can be certainly secured.

Another modified example of the solid-state imaging apparatus accordingto the first aspect of the present disclosure includes

-   -   a solid-state imaging apparatus including    -   a plurality of imaging elements according to the first to ninth        aspects of the present disclosure or imaging elements according        to the first to sixth configurations, in which    -   a plurality of imaging elements are included in an imaging        element block, and    -   the first electrode is shared by the plurality of imaging        elements included in the imaging element block. Note that the        solid-state imaging apparatus configured in this way will be        referred to as a “solid-state imaging apparatus of first        configuration” for convenience. Alternatively, another modified        example of the solid-state imaging apparatus according to the        second aspect of the present disclosure includes    -   a solid-state imaging apparatus including a plurality of stacked        imaging elements each including at least one of the imaging        elements according to the first to ninth aspects of the present        disclosure or the imaging elements according to the first to        sixth configurations, in which    -   a plurality of stacked imaging elements are included in an        imaging element block, and    -   the first electrode is shared by the plurality of stacked        imaging elements included in the imaging element block. Note        that the solid-state imaging apparatus configured in this way        will be referred to as a “solid-state imaging apparatus of        second configuration” for convenience. Furthermore, in this way,        the first electrode can be shared by the plurality of imaging        elements included in the imaging element block to simplify and        miniaturize the configuration and the structure in the pixel        region including a plurality of arrayed imaging elements.

In each of the solid-state imaging apparatuses of the first and secondconfigurations, one floating diffusion layer is provided for a pluralityof imaging elements (one imaging element block). Here, the plurality ofimaging elements provided for one floating diffusion layer may include aplurality of imaging elements of first type described later or mayinclude at least one imaging element of first type and one or two ormore of imaging elements of second type described later. In addition,the timing of the charge transfer period can be appropriately controlledto allow the plurality of imaging elements to share one floatingdiffusion layer. The plurality of imaging elements are operated togetherand connected as an imaging element block to a drive circuit describedlater. That is, the plurality of imaging elements included in theimaging element block are connected to one drive circuit. However, thecharge storage electrode is controlled for each imaging element. Inaddition, the plurality of imaging elements can share one contact holeportion. As for the arrangement relationship between the first electrodeshared by the plurality of imaging elements and the charge storageelectrode of each imaging element, the first electrode may be arrangedadjacent to the charge storage electrode of each imaging element.Alternatively, the first electrode may be arranged adjacent to thecharge storage electrodes of part of the plurality of imaging elementsand not arranged adjacent to the charge storage electrodes of the restof the plurality of imaging elements. In this case, the movement ofcharge from the rest of the plurality of imaging elements to the firstelectrode is movement through the part of the plurality of imagingelements. It is preferable that the distance between the charge storageelectrode included in the imaging element and the charge storageelectrode included in the imaging element (referred to as “distance A”for convenience) be longer than the distance between the first electrodeand the charge storage electrode in the imaging element adjacent to thefirst electrode (referred to as “distance B” for convenience) in orderto certainly move the charge from each imaging element to the firstelectrode. In addition, it is preferable that the farther the positionof the imaging element from the first electrode, the larger the value ofthe distance A.

Furthermore, in each of the imaging elements and the like of the presentdisclosure including various preferred modes described above, the lightmay be incident from the second electrode side, and a light shieldinglayer may be formed on the light incident side closer to the secondelectrode. Alternatively, the light may be incident from the secondelectrode side, and the light may not be incident on the first electrode(first electrode and transfer control electrode depending on the case).Furthermore, in this case, the light shielding layer may be formed onthe light incident side closer to the second electrode and on the upperside of the first electrode (first electrode and transfer controlelectrode depending on the case). Alternatively, an on-chip micro lensmay be provided on the upper side of the charge storage electrode andthe second electrode, and the light incident on the on-chip micro lensmay be collected by the charge storage electrode. Here, the lightshielding layer may be arranged on the upper side of the surface on thelight incident side of the second electrode or may be arranged on thesurface on the light incident side of the second electrode. The lightshielding layer may be formed on the second electrode depending on thecase. Examples of the materials included in the light shielding layerinclude chromium (Cr), copper (Cu), aluminum (Al), tungsten (W), and alight-proof resin (for example, polyimide resin).

Specific examples of the imaging element of the present disclosureinclude: an imaging element (referred to as “blue light imaging elementof first type” for convenience) sensitive to blue light including aphotoelectric conversion layer (referred to as “blue light photoelectricconversion layer of first type” for convenience) that absorbs blue light(light at 425 to 495 nm); an imaging element (referred to as “greenlight imaging element of first type” for convenience) sensitive to greenlight including a photoelectric conversion layer (“referred to as greenlight photoelectric conversion layer of first type” for convenience)that absorbs green light (light at 495 to 570 nm); and an imagingelement (referred to as “red light imaging element of first type” forconvenience) sensitive to red light including a photoelectric conversionlayer (referred to as “red light photoelectric conversion layer of firsttype” for convenience) that absorbs red light (light at 620 to 750 nm).In addition, an imaging element sensitive to blue light that is aconventional imaging element not including the charge storage electrodewill be referred to as a “blue light imaging element of second type” forconvenience. A conventional imaging element sensitive to green lightwill be referred to as a “green light imaging element of second type”for convenience. A conventional imaging element sensitive to red lightwill be referred to as a “red light imaging element of second type” forconvenience. A photoelectric conversion layer included in the blue lightimaging element of second type will be referred to as a “blue lightphotoelectric conversion layer of second type” for convenience. Aphotoelectric conversion layer included in the green light imagingelement of second type will be referred to as a “green lightphotoelectric conversion layer of second type” for convenience. Aphotoelectric conversion layer included in the red light imaging elementof second type will be referred to as a “red light photoelectricconversion layer of second type” for convenience.

The stacked imaging element of the present disclosure includes at leastone imaging element (photoelectric conversion element) of the presentdisclosure, and specific examples of the configuration and the structureinclude:

-   -   [A] a configuration and a structure in which the blue light        photoelectric conversion unit of first type, the green light        photoelectric conversion unit of first type, and the red light        photoelectric conversion unit of first type are stacked in the        vertical direction, and    -   control units of the blue light imaging element of first type,        the green light imaging element of first type, and the red light        imaging element of first type are provided on the semiconductor        substrate;    -   [B] a configuration and a structure in which the blue light        photoelectric conversion unit of first type and the green light        photoelectric conversion unit of first type are stacked in the        vertical direction,    -   the red light photoelectric conversion unit of second type is        arranged on the lower side of these two layers of photoelectric        conversion units of first type, and    -   control units of the blue light imaging element of first type,        the green light imaging element of first type, and the red light        imaging element of second type are provided on the semiconductor        substrate;    -   [C] a configuration and a structure in which the blue light        photoelectric conversion unit of second type and the red light        photoelectric conversion unit of second type are arranged on the        lower side of the green light photoelectric conversion unit of        first type, and    -   control units of the green light imaging element of first type,        the blue light imaging element of second type, and the red light        imaging element of second type are provided on the semiconductor        substrate; and    -   [D] a configuration and a structure in which the green light        photoelectric conversion unit of second type and the red light        photoelectric conversion unit of second type are arranged on the        lower side of the blue light photoelectric conversion unit of        first type, and    -   control units of the blue light imaging element of first type,        the green light imaging element of second type, and the red        light imaging element of second type are provided on the        semiconductor substrate. Note that it is preferable that the        arrangement order of the photoelectric conversion units of the        imaging elements in the vertical direction be the blue light        photoelectric conversion unit, the green light photoelectric        conversion unit, and the red light photoelectric conversion unit        from the light incident direction or the green light        photoelectric conversion unit, the blue light photoelectric        conversion unit, and the red light photoelectric conversion unit        from the light incident direction. This is because the light at        a shorter wavelength is efficiently absorbed on the incident        surface side. Red has the longest wavelength among the three        colors, and it is preferable to position the red light        photoelectric conversion unit in the lowest layer as viewed from        the light incident surface. The stacked structure of the imaging        elements provides one pixel. In addition, an infrared        photoelectric conversion unit of first type may also be        included. Here, it is preferable that the photoelectric        conversion layer of the infrared photoelectric conversion unit        of first type include, for example, organic materials and be        arranged in the lowest layer of the stacked structure of the        imaging elements of first type, above the imaging element of        second type. Alternatively, an infrared photoelectric conversion        unit of second type may also be included on the lower side of        the photoelectric conversion units of first type.

In the imaging element of first type, the first electrode is formed on,for example, an interlayer insulating layer provided on thesemiconductor substrate. The imaging element formed on the semiconductorsubstrate may be a back illuminated type or may be a front illuminatedtype.

In the case where the photoelectric conversion layer includes organicmaterials, the photoelectric conversion layer can be in one of thefollowing four modes.

-   -   (1) The photoelectric conversion layer includes a p-type organic        semiconductor.    -   (2) The photoelectric conversion layer includes an n-type        organic semiconductor.    -   (3) The photoelectric conversion layer includes a stacked        structure of p-type organic semiconductor layer/n-type organic        semiconductor layer. The photoelectric conversion layer includes        a stacked structure of p-type organic semiconductor layer/mixed        layer (bulk hetero structure) of p-type organic semiconductor        and n-type organic semiconductor/n-type organic semiconductor        layer. The photoelectric conversion layer includes a stacked        structure of p-type organic semiconductor layer/mixed layer        (bulk hetero structure) of p-type organic semiconductor and        n-type organic semiconductor. The photoelectric conversion layer        includes a stacked structure of n-type organic semiconductor        layer/mixed layer (bulk hetero structure) of p-type organic        semiconductor and n-type organic semiconductor.    -   (4) The photoelectric conversion layer includes a mixture (bulk        hetero structure) of p-type organic semiconductor and n-type        organic semiconductor.        Here, the order of stacking can be arbitrarily switched.

Examples of the p-type organic semiconductor include a naphthalenederivative, an anthracene derivative, a phenanthrene derivative, apyrene derivative, a perylene derivative, a tetracene derivative, apentacene derivative, a quinacridone derivative, a thiophene derivative,a thienothiophene derivative, a benzothiophene derivative, abenzothienobenzothiophene derivative, a triallylamine derivative, acarbazole derivative, a perylene derivative, a picene derivative, achrysene derivative, a fluoranthene derivative, a phthalocyaninederivative, a subphthalocyanine derivative, a subporphyrazinederivative, a metal complex including heterocyclic compounds as ligands,a polythiophene derivative, a polybenzothiadiazole derivative, and apolyfluorene derivative. Examples of the n-type organic semiconductorinclude a fullerene and a fullerene derivative<for example, fullerene(higher fullerene), such as C60, C70, and C74, endohedral fullerene, orthe like) or fullerene derivative (for example, fullerene fluoride, PCBMfullerene compound, fullerene multimer, or the like)>, an organicsemiconductor with larger (deeper) HOMO and LUMO than the p-type organicsemiconductor, and transparent inorganic metal oxide. Specific examplesof the n-type organic semiconductor include organic molecules including,as part of molecular framework, a heterocyclic compound containingnitrogen atoms, oxygen atoms, and sulfur atoms, such as a pyridinederivative, a pyrazine derivative, a pyrimidine derivative, a triazinederivative, a quinoline derivative, a quinoxaline derivative, anisoquinoline derivative, an acridine derivative, a phenazine derivative,a phenanthroline derivative, a tetrazole derivative, a pyrazolederivative, an imidazole derivative, a thiazole derivative, an oxazolederivative, an imidazole derivative, a benzimidazole derivative, abenzotriazole derivative, a benzoxazole derivative, a benzoxazolederivative, a carbazole derivative, a benzofuran derivative, adibenzofuran derivative, a subporphyrazine derivative, a polyphenylenevinylene derivative, a polybenzothiadiazole derivative, and apolyfluorene derivative, an organic metal complex, and asubphthalocyanine derivative. Examples of groups and the like includedin the fullerene derivative include: halogen atoms; a straight-chain,branched, or cyclic alkyl group or phenyl group; a group including astraight-chain or condensed aromatic compound; a group including halide;a partial fluoroalkyl group; a perfluoroalkyl group; a silylalkyl group;a silylalkoxy group; an arylsilyl group; an arylsulfanyl group; analkylsulfanyl group; an arylsulfonyl group; an alkylsulfonyl group; anarylsulfide group; an alkylsulfide group; an amino group; an alkylaminogroup; an arylamino group; a hydroxy group; an alkoxy group; anacylamino group; an acyloxy group; a carbonyl group; a carboxy group; acarboxamide group; a carboalkoxy group; an acyl group; a sulfonyl group;a cyano group; a nitro group; a group including chalcogenide; aphosphine group; a phosphon group; and derivatives of these. Althoughthe thickness of the photoelectric conversion layer including theorganic materials (referred to as “organic photoelectric conversionlayer” in some cases) is not limited, the thickness can be, for example,1×10⁻⁸ m to 5×10⁻⁷ m, preferably, 2.5×10⁻⁸ m to 3×10⁻⁷ m, morepreferably, 2.5×10⁻⁸ m to 2×10⁻⁷ m, further preferably, 1×10⁻⁷ m to1.8×10⁻⁷ m. Note that the organic semiconductors are often classifiedinto p-type and n-type. The p-type denotes that the electron holes canbe easily transported, and the n-type denotes that the electrons can beeasily transported. The organic semiconductor is not limited to theinterpretation that the electron holes or the electrons are included asthermally excited majority carriers as in an inorganic semiconductor.

Alternatively, examples of the materials included in the organicphotoelectric conversion layer for photoelectric conversion of greenlight include a rhodamine dye, a merocyanine dye, a quinacridonederivative, and a subphthalocyanine dye (subphthalocyanine derivative).Examples of the materials included in the organic photoelectricconversion layer for photoelectric conversion of blue light include acoumaric acid dye, tris (8-hydroxyquinolinato) aluminum (Alq3), and amerocyanine dye. Examples of the materials included in the organicphotoelectric conversion layer for photoelectric conversion of red lightinclude a phthalocyanine dye and a subphthalocyanine dye(subphthalocyanine derivative).

Alternatively, examples of the inorganic materials included in thephotoelectric conversion layer include crystalline silicon, amorphoussilicon, microcrystalline silicone, crystalline selenium, amorphousselenium, chalcopyrite compounds, such as CIGS (CuInGaSe), CIS(CuInSe₂), CuInS₂, CuAlS₂, CuAlSe₂, CuGaS₂, CuGaSe₂, AgAlS₂, AgAlSe₂,AgInS₂, and AgInSe₂, group III-V compounds, such as GaAs, InP, AlGaAs,InGaP, AlGaInP, and InGaAsP, and compound semiconductors of CdSe, CdS,In₂Se₃, In₂S₃, Bi₂Se₃, Bi₂S₃, ZnSe, ZnS, PbSe, PbS, and the like. Inaddition, quantum dots including these materials can also be used forthe photoelectric conversion layer.

Alternatively, the photoelectric conversion layer can have a stackedstructure of a lower semiconductor layer and an upper photoelectricconversion layer as described above. The lower semiconductor layer canbe provided in this way to prevent, for example, recombination duringcharge storage. In addition, the charge transfer efficiency of thecharge stored in the photoelectric conversion layer to the firstelectrode can be increased. Furthermore, the charge generated in thephotoelectric conversion layer can be temporarily held to control thetiming and the like of the transfer. In addition, the generation of darkcurrent can be suppressed. The material included in the upperphotoelectric conversion layer can be appropriately selected fromvarious materials included in the photoelectric conversion layer. On theother hand, it is preferable that the material used for the lowersemiconductor layer be a material with a large value of band-gap energy(for example, band-gap energy with a value equal to or greater than 3.0eV) and with mobility higher than the mobility of the material includedin the photoelectric conversion layer. Specific examples of the materialinclude: an oxide semiconductor material such as IGZO; transition metaldichalcogenide; silicon carbide; diamond; graphene; a carbon nano-tube;and an organic semiconductor material such as a fused polycyclichydrocarbon compound and a fused heterocyclic compound. Alternatively,other examples of the material included in the lower semiconductor layerinclude: a material with ionization potential larger than the ionizationpotential of the material included in the photoelectric conversion layerin the case where the charge to be stored is electrons; and a materialwith electron affinity smaller than the electron affinity of thematerial included in the photoelectric conversion layer in the casewhere the charge to be stored is electron holes. Alternatively, it ispreferable that the impurity concentration of the material included inthe lower semiconductor layer be equal to or smaller than 1×10¹⁸ cm⁻³.The lower semiconductor layer may have a single-layer configuration ormay have a multi-layer configuration. In addition, the material includedin the lower semiconductor layer positioned on the upper side of thecharge storage electrode and the material included in the lowersemiconductor layer positioned on the upper side of the first electrodemay be different.

The solid-state imaging apparatuses according to the first and secondaspects of the present disclosure and the solid-state imagingapparatuses of the first and second configurations can providesingle-plate color solid-state imaging apparatuses.

In the solid-state imaging apparatus according to the second aspect ofthe present disclosure or the solid-state imaging apparatus of thesecond configuration including the stacked imaging elements, the imagingelements sensitive to light at a plurality of types of wavelengths inthe light incident direction within the same pixel are stacked toprovide one pixel, unlike in the solid-state imaging apparatus includingimaging elements of Bayer array (that is, not using a color filter toseparate blue, green, and red). Therefore, the sensitivity can beimproved, and the pixel density per unit volume can be improved. Inaddition, the absorption coefficients of the organic materials are high,and the film thickness of the organic photoelectric conversion layer canbe thinner than a conventional Si-based photoelectric conversion layer.This reduces light leakage from adjacent pixels and alleviatesrestrictions on light incident angle. Furthermore, in the conventionalSi-based imaging elements, an interpolation process is executed for thepixels of three colors to create color signals, and therefore, falsecolors are generated. In the solid-state imaging apparatus according tothe second aspect of the present disclosure or the solid-state imagingapparatus of the second configuration including the stacked imagingelements, the generation of the false colors is suppressed. The organicphotoelectric conversion layer also functions as a color filter, and thecolors can be separated without arranging the color filter.

On the other hand, in the solid-state imaging apparatus according to thefirst aspect of the present disclosure or the solid-state imagingapparatus of the first configuration, the color filter can be used toalleviate the requirements for the spectral characteristics of blue,green, and red, and the mass productivity is high. Examples of the arrayof the imaging elements in the solid-state imaging apparatus accordingto the first aspect of the present disclosure or the solid-state imagingapparatus of the first configuration include the Bayer array, as well asan interline array, a G stripe RB checkered array, a G stripe RB fullcheckered array, a checkered complementary color array, a stripe array,a diagonal stripe array, a primary color difference array, a field colordifference sequential array, a frame color difference sequential array,a MOS array, an improved MOS array, a frame interleave array, and afield interleave array. Here, one imaging element provides one pixel (orsubpixel).

The pixel region provided with a plurality of arrayed imaging elementsof the present disclosure or a plurality of arrayed stacked imagingelements of the present disclosure includes a plurality of pixelssystematically arranged in a two-dimensional array. The pixel regionusually includes: an effective pixel region in which the light isactually received to generate signal charge through photoelectricconversion, and the signal charge is amplified and read out to the drivecircuit; and a black reference pixel region for outputting optical blackas a standard for black level. The black reference pixel region isusually arranged on the periphery of the effective pixel region.

In the imaging element and the like of the present disclosure includingvarious preferred modes and configurations described above, the light isapplied, and photoelectric conversion occurs in the photoelectricconversion layer. Carrier separation of electron holes (holes) andelectrons is conducted. In addition, the electrode from which theelectron holes are extracted is an anode, and the electrode from whichthe electrons are extracted is a cathode. There is a mode in which thefirst electrode provides the anode, and the second electrode providesthe cathode. Conversely, there is also a mode in which the firstelectrode provides the cathode, and the second electrode provides theanode.

In a case of providing the stacked imaging element, the first electrode,the charge storage electrode, the charge movement control electrode, thetransfer control electrode, and the second electrode can includetransparent conductive materials. Note that the first electrode, thecharge storage electrode, the charge movement control electrode, and thetransfer control electrode will be collectively referred to as “firstelectrode and the like” in some cases. Alternatively, in a case wherethe imaging element and the like of the present disclosure are arrangedon a plane as in, for example, a Bayer array, the second electrode caninclude a transparent conductive material, and the first electrode andthe like can include a metal material. In this case, specifically, thesecond electrode positioned on the light incident side can include atransparent conductive material, and the first electrode and the likecan include, for example, Al—Nd (alloy of aluminum and neodymium) or ASC(alloy of aluminum, samarium, and copper). Note that an electrodeincluding a transparent conductive material will be referred to as a“transparent electrode” in some cases. Here, it is desirable that theband-gap energy of the transparent conductive material be equal to orgreater than 2.5 eV, preferably, equal to or greater than 3.1 eV. Anexample of the transparent conductive material included in thetransparent electrode includes conductive metal oxide. Specifically,examples of the transparent conductive material include indium oxide,indium-tin oxide (including ITO, Indium Tin Oxide, Sn-doped In₂O₃,crystalline ITO, and amorphous ITO), indium-zinc oxide (IZO, Indium ZincOxide) obtained by adding indium as a dopant to zinc oxide,indium-gallium oxide (IGO) obtained by adding indium as a dopant togallium oxide, indium-gallium-zinc oxide (IGZO, In—GaZnO₄) obtained byadding indium and gallium as dopants to zinc oxide, indium-tin-zincoxide (ITZO) obtained by adding indium and tin as dopants to zinc oxide,IFO (F-doped In₂O₃), tin oxide (SnO₂), ATO (Sb-doped SnO₂), FTO (F-dopedSnO₂), zinc oxide (including ZnO doped with other elements),aluminum-zinc oxide (AZO) obtained by adding aluminum as a dopant tozinc oxide, gallium-zinc oxide (GZO) obtained by adding gallium as adopant to zinc oxide, titanium oxide (TiO₂), niobium-titanium oxide(TNO) obtained by adding niobium as a dopant to titanium oxide, antimonyoxide, spinel oxide, and oxide with YbFe₂O₄ structure. Alternatively,the transparent electrode can include gallium oxide, titanium oxide,niobium oxide, nickel oxide or the like as a mother layer. An example ofthe thickness of the transparent electrode includes 2×10⁻⁸ m to 2×10⁻⁷m, preferably, 3×10⁻⁸ m to 1×10⁻⁷ m. In a case where the first electrodeneeds to be transparent, it is preferable that the other electrodes alsoinclude transparent conductive materials from the viewpoint ofsimplification of the manufacturing process.

Alternatively, in a case where the transparency is not necessary, it ispreferable to use a conductive material with a high work function (forexample, φ=4.5 eV to 5.5 eV) as a conductive material included in theanode with a function of an electrode for extracting the electron holes.Specifically, examples of the conductive material include gold (Au),silver (Ag), chromium (Cr), nickel (Ni), palladium (Pd), platinum (Pt),iron (Fe), iridium (Ir), germanium (Ge), osmium (Os), rhenium (Re), andtellurium (Te). On the other hand, it is preferable to use a conductivematerial with a low work function (for example, φ=3.5 eV to 4.5 eV) as aconductive material included in the cathode with a function of anelectrode for extracting the electrons. Specifically, examples of theconductive material include alkali metal (for example, Li, Na, K, or thelike) and fluoride or oxide of the alkali metal, alkaline earth metal(for example, Mg, Ca, or the like) and fluoride or oxide of the alkalineearth metal, aluminum (Al), zinc (Zn), tin (Sn), thallium (Tl), asodium-potassium alloy, an aluminum-lithium alloy, a magnesium-silveralloy, indium, rare earth metal such as ytterbium, and alloys of these.Alternatively, examples of the material included in the anode or thecathode include metal, such as platinum (Pt), gold (Au), palladium (Pd),chromium (Cr), nickel (Ni), aluminum (Al), silver (Ag), tantalum (Ta),tungsten (W), copper (Cu), titanium (Ti), indium (In), tin (Sn), iron(Fe), cobalt (Co), and molybdenum (Mo), alloys containing these metalelements, conductive particles including these metals, conductiveparticles of alloys containing these metals, polysilicon containingimpurities, a carbon material, an oxide semiconductor material, a carbonnanotube, and a conductive material such as graphene. The anode orcathode can also have a stacked structure of layers containing theseelements. Furthermore, examples of the material included in the anode orthe cathode also include organic materials (conductive polymers) such aspoly (3,4-ethylenedioxythiophene-poly (styrenesulfonate) [PEDOT/PSS]. Inaddition, these conductive materials may be mixed with a binder(polymer) to obtain a paste or an ink, and the paste or the ink may becured and used as an electrode.

A dry method or a wet method can be used as a deposition method of thefirst electrode and the like or the second electrode (cathode or anode).Examples of the dry method include a physical vapor deposition method(PVD method) and a chemical vapor deposition method (CVD method).Examples of the deposition method using the principle of PVD methodinclude a vacuum evaporation method using resistance heating or radiofrequency heating, an EB (electron beam) evaporation method, varioussputtering methods (magnetron sputtering method, RF-DC coupled biassputtering method, ECR sputtering method, facing target sputteringmethod, and RF sputtering method), an ion plating method, a laserablation method, a molecular beam epitaxy method, and a laser transfermethod. In addition, examples of the CVD method include a plasma CVDmethod, a thermal CVD method, an organic metal (MO) CVD method, and anoptical CVD method. On the other hand, examples of the wet methodinclude methods, such as an electroplating method, an electrolessplating method, a spin coating method, an inkjet method, a spray coatingmethod, a stamping method, a microcontact printing method, aflexographic printing method, an offset printing method, a gravureprinting method, and a dipping method. Examples of a patterning methodinclude chemical etching, such as a shadow mask, laser transfer, andphotolithography, and physical etching using ultraviolet light, laser,or the like. Examples of a planarization method of the first electrodeand the like and the second electrode include a laser planarizationmethod, a reflow method, and a CMP (Chemical Mechanical Polishing)method.

Except for the insulating layer in the imaging element and the likeaccording to the fifth aspect of the present disclosure, examples of thematerial included in the insulating layer include not only inorganicinsulating materials like metal oxide high dielectric insulatingmaterials such as: a silicon oxide material; a silicon nitride(SiN_(y)); and aluminum oxide (Al₂O₃), but also organic insulatingmaterials (organic polymers) such as: polymethyl methacrylate (PMMA);polyvinyl phenol (PVP); polyvinyl alcohol (PVA); polyimide;polycarbonate (PC); polyethylene terephthalate (PET); polystyrene; asilanol derivative (silane coupling agent) such asN-(2-aminoethyl)-3-aminopropyltrimethoxysilane (AEAPTMS),3-mercaptopropyltrimethoxysilane (MPTMS), and octadecyltrichlorosilane(OTS); a novolac phenolic resin; a fluororesin; and straight chainhydrocarbons, such as octadecanethiol and dodecyl isocyanate, including,on one end, a functional group that can be combined with a controlelectrode. A combination of these can also be used. Note that examplesof the silicon oxide material include silicon oxide (SiO_(X)), BPSG,PSG, BSG, AsSG, PbSG, silicon oxynitride (SiON), SOG (spin on glass),and low dielectric insulating materials (for example, polyarylether,cycloperfluorocarbon polymer, benzocyclobutene, cyclic fluororesin,polytetrafluoroethylene, fluorinated aryl ether, fluorinated polyimide,amorphous carbon, and organic SOG). These materials can also beappropriately selected for the materials included in various interlayerinsulating layers and insulating films.

The configurations and the structures of the floating diffusion layer,the amplification transistor, the reset transistor, and the selectiontransistor included in the control unit can be similar to theconfigurations and the structures of the conventional floating diffusionlayer, amplification transistor, reset transistor, and selectiontransistor. The drive circuit can also have well-known configuration andstructure.

The first electrode is connected to the floating diffusion layer and agate portion of the amplification transistor, and a contact hole portioncan be formed for the connection of the first electrode to the floatingdiffusion layer and the gate portion of the amplification transistor.Examples of the materials included in the contact hole portion includepolysilicon doped with impurities, high melting point metal and metalsilicide, such as tungsten, Ti, Pt, Pd, Cu, TiW, TiN, TiNW, WSi₂, andMoSi₂, and a stacked structure of layers including these materials (forexample, Ti/TiN/W).

A first carrier blocking layer may be provided between the organicphotoelectric conversion layer and the first electrode, and a secondcarrier blocking layer may be provided between the organic photoelectricconversion layer and the second electrode. In addition, a first chargeinjection layer may be provided between the first carrier blocking layerand the first electrode, and a second charge injection layer may beprovided between the second carrier blocking layer and the secondelectrode. For example, examples of the materials included in theelectron injection layer include alkali metal, such as lithium (Li),sodium (Na), and potassium (K), fluoride or oxide of the alkali metal,alkaline earth metal, such as magnesium (Mg) and calcium (Ca), andfluoride or oxide of the alkaline earth metal.

Examples of the deposition method of various organic layers include adry deposition method and a wet deposition method. Examples of the drydeposition method include a vacuum evaporation method using resistanceheating, radio frequency heating, or electron beam heating, a flashevaporation method, a plasma deposition method, an EB evaporationmethod, various sputtering methods (bipolar sputtering method, DCsputtering method, DC magnetron sputtering method, RF sputtering method,magnetron sputtering method, RF-DC coupled bias sputtering method, ECRsputtering method, facing target sputtering method, RF sputteringmethod, and ion beam sputtering method), a DC (Direct Current) method,an RF method, a multi-cathode method, an activation reaction method, anelectric field evaporation method, various ion plating methods, such asan RF ion plating method and a reactive ion plating method, a laserablation method, a molecular beam epitaxy method, a laser transfermethod, and a molecular beam epitaxy method (MBE method). In addition,examples of the CVD method include a plasma CVD method, a thermal CVDmethod, an MOCVD method, and an optical CVD method. On the other hand,specific examples of the wet method include: a spin coating method; adipping method; a casting method; a microcontact printing method; a dropcasting method; various printing methods, such as a screen printingmethod, an inkjet printing method, an offset printing method, a gravureprinting method, and a flexographic printing method; a stamping method;a spraying method; and various coating methods, such as an air doctorcoater method, a blade coater method, a rod coater method, a knifecoater method, a squeeze coater method, a reverse roll coater method, atransfer roll coater method, a gravure coater method, a kiss coatermethod, a cast coater method, a spray coater method, a slit orificecoater method, and a calendar coater method. Note that in the coatingmethod, examples of the solvent include nonpolar or low-polarity organicsolvents, such as toluene, chloroform, hexane, and ethanol. Examples ofthe patterning method include chemical etching, such as a shadow mask,laser transfer, and photolithography, and physical etching usingultraviolet light, laser, or the like. A laser planarization method, areflow method, and the like can be used as planarization techniques ofvarious organic layers.

Two or more types of imaging elements and the like according to thefirst to ninth aspects of the present disclosure and imaging elements ofthe first to sixth configurations including the preferred modes andconfigurations described above can be appropriately combined asnecessary.

As described above, the on-chip micro lens and the light shielding layermay be provided on the imaging element or the solid-state imagingapparatus as necessary, and the drive circuit and the wire for drivingthe imaging element are provided. A shutter for controlling the lightincident on the imaging element may be arranged as necessary, and anoptical cut filter may be provided according to the purpose of thesolid-state imaging apparatus.

In addition, the solid-state imaging apparatuses of the first and secondconfigurations can be in a mode where one on-chip micro lens is arrangedon the upper side of one imaging element. Alternatively, two imagingelements can be included in the imaging element block, and one on-chipmicro lens can be arranged on the upper side of the imaging elementblock.

For example, in a case of stacking the solid-state imaging apparatus anda readout integrated circuit (ROTC), a drive substrate, which isprovided with the readout integrated circuit and a connection portioncontaining copper (Cu), and the imaging element, which is provided witha connection portion, can be placed on top of each other so that theconnection portions come in contact with each other. The connectionportions can be bonded to stack the solid-state imaging apparatus andthe readout integrated circuit, and solder bumps or the like can also beused to bond the connection portions.

Furthermore, a driving method for driving the solid-state imagingapparatuses according to the first and second aspects of the presentdisclosure can be a driving method of the solid-state imaging apparatusrepeating the steps of:

-   -   releasing the charge in the first electrodes all at once to the        outside the system while storing the charge in the photoelectric        conversion layers in all of the imaging elements; and        subsequently,    -   transferring the charge stored in the photoelectric conversion        layers all at once to the first electrodes in all of the imaging        elements, and after the completion of the transfer, sequentially        reading the charge transferred to the first electrodes in the        imaging elements.

In the driving method of the solid-state imaging apparatus, the lightincident from the second electrode side is not incident on the firstelectrode in each imaging element. The charge in the first electrodes isreleased to the outside the system all at once while the charge isstored in the photoelectric conversion layers in all of the imagingelements. Therefore, the first electrodes can be certainly reset at thesame time in all of the imaging elements. In addition, subsequently, thecharge stored in the photoelectric conversion layers is transferred allat once to the first electrodes in all of the imaging elements. Afterthe completion of the transfer, the imaging elements sequentially readthe charge transferred to the first electrodes. Therefore, a so-calledglobal shutter function can be easily realized.

Embodiment 1

Embodiment 1 relates to the imaging element and the like according tothe first aspect of the present disclosure, the imaging element and thelike according to the third aspect of the present disclosure, thestacked imaging element of the present disclosure, and the solid-stateimaging apparatus according to the second aspect of the presentdisclosure.

FIG. 1A illustrates a schematic cross-sectional view of part of theimaging elements of Embodiment 1 (two imaging elements arranged side byside). Note that the schematic cross-sectional view of FIG. 1A or FIG.1B described later is similar to, for example, a schematiccross-sectional view taken along one-dot chain line A-A of FIG. 15A. Inaddition, FIG. 2 illustrates a schematic partial cross-sectional view ofthe imaging element and the stacked imaging element of Embodiment 1.FIGS. 3 and 4 illustrate equivalent circuit diagrams of the imagingelement and the stacked imaging element of Embodiment 1. FIG. 5illustrates a schematic layout drawing of first electrodes, chargestorage electrodes, and transistors of control units included in theimaging elements of Embodiment 1. Furthermore, FIGS. 6 and 7 illustrateschematic layout drawings of the first electrodes and the charge storageelectrodes included in the imaging elements of Embodiment 1. FIG. 8schematically illustrates a state of potential in each section duringoperation of the imaging element of Embodiment 1. FIG. 9A illustrates anequivalent circuit diagram of the imaging element and the stackedimaging element of Embodiment 1 for describing each section of FIG. 8 .FIG. 10 illustrates a conceptual diagram of the solid-state imagingapparatus of Embodiment 1. Note that various constituent elements of theimaging element positioned on the lower side of an interlayer insulatinglayer 81 may be collectively indicated by reference number 91 forconvenience in order to simplify the drawings.

Each of the imaging element of Embodiment 1 (for example, green lightimaging element described later) and the imaging elements of Embodiments2 to 8 described later includes a photoelectric conversion unitincluding a first electrode 11, a photoelectric conversion layer 13, anda second electrode 12 that are stacked. The photoelectric conversionunit further includes a charge storage electrode 14 arranged apart fromthe first electrode 11 and arranged to face the photoelectric conversionlayer 13 through an insulating layer 82.

Note that in the example illustrated in FIG. 6 , one imaging element isprovided with one charge storage electrode 14 corresponding to one firstelectrode 11. On the other hand, in an example illustrated in FIG. 7(Modified Example 1 of Embodiment 1), two imaging elements are providedwith one common first electrode 11 corresponding to two charge storageelectrodes 14. The schematic cross-sectional view of part of the imagingelements of Embodiment 1 (two imaging elements arranged side by side)illustrated in FIG. 1A corresponds to FIG. 7 .

The second electrode 12 positioned on the light incident side is sharedby a plurality of imaging elements except for the imaging element andthe like of Embodiment 3 described later. That is, the second electrode12 is a so-called solid electrode. The photoelectric conversion layer 13is shared by a plurality of imaging elements. That is, one photoelectricconversion layer 13 is formed in a plurality of imaging elements.

The stacked imaging element of Embodiment 1 includes at least one of theimaging element of Embodiment 1 or the imaging elements of Embodiments 2to 8 described later. In Embodiment 1, the stacked imaging elementincludes one of the imaging element of Embodiment 1 and the imagingelements of Embodiments 2 to 8 described later.

Furthermore, the solid-state imaging apparatus of Embodiment 1 includesa plurality of stacked imaging elements of the imaging elements ofEmbodiment 1 and Embodiments 2 to 8 described later.

In addition, when the light is incident on the photoelectric conversionlayer 13, and photoelectric conversion occurs in the photoelectricconversion layer 13 in the imaging element of Embodiment 1, an absolutevalue of the potential applied to a part 13 c of the photoelectricconversion layer 13 facing the charge storage electrode 14 is a valuelarger than an absolute value of the potential applied to a region 13Bof the photoelectric conversion layer 13 (region-B of photoelectricconversion layer) positioned between the imaging element and theadjacent imaging element.

Alternatively, in the imaging element of Embodiment 1, a charge movementcontrol electrode 21 is formed in a region facing, through theinsulating layer 82, the region 13B of the photoelectric conversionlayer 13 (region-B of photoelectric conversion layer) positioned betweenthe imaging element and the adjacent imaging element. In other words,the charge movement control electrode 21 is formed below a part 82B ofthe insulating layer 82 (region-B of insulating layer 82) in a region(region-b) between the charge storage electrode 14 and the chargestorage electrode 14 of the adjacent imaging elements. The chargemovement control electrode 21 is provided apart from the charge storageelectrode 14. Alternatively, in other words, the charge movement controlelectrode 21 is provided around the charge storage electrode 14 andapart from the charge storage electrode 14, and the charge movementcontrol electrode 21 is arranged to face the region-B (13B) of thephotoelectric conversion layer through the insulating layer 82. Notethat although the charge movement control electrode 21 is notillustrated in FIG. 2 , the charge movement control electrode 21 isformed in a direction of an arrow “A.” The charge movement controlelectrode 21 is shared by the imaging elements arranged in the left andright direction of FIG. 5 and is shared by a pair of imaging elementsarranged in the up and down direction of FIG. 5 .

The imaging element without the illustration of the charge movementcontrol electrode 21 as well as a connection hole 23, a pad portion 22,and a wire V_(0B) described later will be referred to as an “imagingelement with basic structure of the present disclosure” for convenience.FIG. 2 is a schematic partial cross-sectional view of the imagingelement with basic structure of the present disclosure. FIGS. 42, 43,44, 45, 46, 47, 54, 61, 62, 64, 65, 66, 71, 88, 89, 91, 92, 93, 94, 95,96 , 97, and 98 are schematic partial cross-sectional views of variousmodified examples of the imaging element with basic structure of thepresent disclosure illustrated in FIG. 2 , and the charge movementcontrol electrode 21 and the like are not illustrated.

Furthermore, a semiconductor substrate (more specifically, siliconsemiconductor layer) 70 is further included, and the photoelectricconversion unit is arranged on the upper side of the semiconductorsubstrate 70. In addition, a control unit provided on the semiconductorsubstrate 70 and including a drive circuit connected to the firstelectrode 11 and the second electrode 12 is further included. Here, thelight incident surface in the semiconductor substrate 70 is the upperside, and the opposite side of the semiconductor substrate 70 is thelower side. A wiring layer 62 including a plurality of wires is providedon the lower side of the semiconductor substrate 70.

The semiconductor substrate 70 is provided with at least a floatingdiffusion layer FD₁ and an amplification transistor TR1 _(amp) includedin the control unit, and the first electrode 11 is connected to thefloating diffusion layer FD₁ and a gate portion of the amplificationtransistor TR1 _(amp). The semiconductor substrate 70 is furtherprovided with a reset transistor TR1 _(rst) and a selection transistorTR1 _(set) included in the control unit. The floating diffusion layerFD₁ is connected to one source/drain region of the reset transistor TR1_(rst). The other source/drain region of the amplification transistorTR1 _(amp) is connected to one source/drain region of the selectiontransistor TR1 _(set). The other source/drain region of the selectiontransistor TR1 _(set) is connected to a signal line VSL₁. Theamplification transistor TR1 _(amp), the reset transistor TR1 _(rst),and the selection transistor TR1 _(set) are included in the drivecircuit.

Specifically, the imaging element and the stacked imaging element ofEmbodiment 1 are a back illuminated type imaging element and a backilluminated type stacked imaging element. The imaging element and thestacked imaging element have a stacked structure of three imagingelements including: a green light imaging element of first type inEmbodiment 1 (hereinafter, referred to as “first imaging element”)sensitive to green light, the green light imaging element including agreen light photoelectric conversion layer of first type for absorbinggreen light; a conventional blue light imaging element of second type(hereinafter, referred to as “second imaging element”) sensitive to bluelight, the blue light imaging element including a blue lightphotoelectric conversion layer of second type for absorbing blue light;and a conventional red light imaging element of second type(hereinafter, referred to as “third imaging element”) sensitive to redlight, the red light imaging element including a red light photoelectricconversion layer of second type for absorbing red light. Here, the redlight imaging element (third imaging element) and the blue light imagingelement (second imaging element) are provided in the semiconductorsubstrate 70, and the second imaging element is positioned on the lightincident side with respect to the third imaging element. In addition,the green light imaging element (first imaging element) is provided onthe upper side of the blue light imaging element (second imagingelement). The stacked structure of the first imaging element, the secondimaging element, and the third imaging element is included in one pixel.Color filters are not provided.

In the first imaging element, the first electrode 11 and a chargestorage electrode 14 are formed apart from each other on the interlayerinsulating layer 81. In addition, the charge movement control electrode21 is formed apart from the charge storage electrode 14 on theinterlayer insulating layer 81. The interlayer insulating layer 81, thecharge storage electrode 14, and the charge movement control electrode21 are covered by the insulating layer 82. The photoelectric conversionlayer 13 is formed on the insulating layer 82, and the second electrode12 is formed on the photoelectric conversion layer 13. A protectivelayer 83 is formed over the entire surface including the secondelectrode 12, and an on-chip micro lens 90 is provided on the protectivelayer 83. The first electrode 11, the charge storage electrode 14, thecharge movement control electrode 21, and the second electrode 12include, for example, transparent electrodes containing ITO (workfunction: approximately 4.4 eV). The photoelectric conversion layer 13includes a layer containing a well-known organic photoelectricconversion material sensitive to at least green light (for example,organic material such as rhodamine dye, merocyanine dye, andquinacridone). In addition, the photoelectric conversion layer 13 mayfurther include a material layer suitable for charge storage. That is, amaterial layer suitable for charge storage may be further formed betweenthe photoelectric conversion layer 13 and the first electrode 11 (forexample, in a connection portion 67). The interlayer insulating layer81, the insulating layer 82, and the protective layer 83 include awell-known insulating material (for example, SiO₂ or SiN). Thephotoelectric conversion layer 13 and the first electrode 11 areconnected through the connection portion 67 provided on the insulatinglayer 82. The photoelectric conversion layer 13 extends in theconnection portion 67. That is, the photoelectric conversion layer 13extends in an opening portion 84 provided on the insulating layer 82 andis connected to the first electrode 11.

The charge storage electrode 14 is connected to the drive circuit.Specifically, the charge storage electrode 14 is connected to a verticaldrive circuit 112 included in the drive circuit through a connectionhole 66, a pad portion 64, and a wire VOA provided in the interlayerinsulating layer 81.

The charge movement control electrode 21 is also connected to the drivecircuit. Specifically, the charge movement control electrode 21 isconnected to the vertical drive circuit 112 included in the drivecircuit through the connection hole 23, the pad portion 22, and the wireV_(OB) provided in the interlayer insulating layer 81. Morespecifically, the charge movement control electrode 21 is formed in theregion (region-B (82 _(B)) of insulating layer) facing the region-B (13_(B)) of the photoelectric conversion layer 13 through the insulatinglayer 82. In other words, the charge movement control electrode 21 isformed below the part 82 _(B) of the insulating layer 82 in the region(region-b) between the charge storage electrode 14 and the chargestorage electrode 14 included in adjacent imaging elements. The chargemovement control electrode 21 is provided apart from the charge storageelectrode 14. Alternatively, in other words, the charge movement controlelectrode 21 is provided around the charge storage electrode 14 andapart from the charge storage electrode 14, and the charge movementcontrol electrode 21 is arranged to face the region-B (13B) of thephotoelectric conversion layer 13 through the insulating layer 82.

The size of the charge storage electrode 14 is larger than the firstelectrode 11. Although not limited, it is preferable to satisfy

4≤S ₁ ′/S ₁,

-   -   where S₁′ is an area of the charge storage electrode 14, and S₁        is an area of the first electrode 11. Although not limited, for        example,

S ₁ ′/S ₁=8

-   -   is set in the imaging element of Embodiment 1 or Embodiments 2        to 8 described later. Note that in Embodiments 13 to 16        described later, the sizes of three photoelectric conversion        unit segments 101, 102, and 103) are the same size, and the        plane shapes are also the same.

An element separation region 71 is formed on the side of a first surface(front surface) 70A of the semiconductor substrate 70, and an oxide film72 is formed on the first surface 70A of the semiconductor substrate 70.Furthermore, the reset transistor TR1 _(rst), the amplificationtransistor TR1 _(amp), and the selection transistor TR1 _(sel) includedin the control unit of the first imaging element are provided on thefirst surface side of the semiconductor substrate 70, and the firstfloating diffusion layer FD₁ is further provided.

The reset transistor TR1 _(rst) includes a gate portion 51, a channelformation region 51A, and source/drain regions 51B and 51C. The gateportion 51 of the reset transistor TR1 _(rst) is connected to a resetline RST₁. One source/drain region 51C of the reset transistor TR1_(rst) also serves as the first floating diffusion layer FD₁, and theother source/drain region 51B is connected to a power source V_(DD).

The first electrode 11 is connected to one source/drain region 51C(first floating diffusion layer FD₁) of the reset transistor TR1 _(rst)through a connection hole 65 and a pad portion 63 provided in theinterlayer insulating layer 81, through a contact hole portion 61 formedon the semiconductor substrate 70 and an interlayer insulating layer 76,and through the wiring layer 62 formed on the interlayer insulatinglayer 76.

The amplification transistor TR1 _(amp) includes a gate portion 52, achannel formation region 52A, and source/drain regions 52B and 52C. Thegate portion 52 is connected to the first electrode 11 and onesource/drain region 51C (first floating diffusion layer FD₁) of thereset transistor TR1 _(rst) through the wiring layer 62. In addition,one source/drain region 52B is connected to the power source V_(DD).

The selection transistor TR1 _(sel) includes a gate portion 53, achannel formation region 53A, and source/drain regions 53B and 53C. Thegate portion 53 is connected to a selection line SELL In addition, onesource/drain region 53B shares the region with the other source/drainregion 52C included in the amplification transistor TR1 _(amp), and theother source/drain region 53C is connected to the signal line (dataoutput line) VSL₁ (117).

The second imaging element includes an n-type semiconductor region 41 asa photoelectric conversion layer provided on the semiconductor substrate70. A gate portion 45 of a transfer transistor TR2 _(trs) including avertical transistor extends to the n-type semiconductor region 41 and isconnected to a transfer gate line TG₂. In addition, a second floatingdiffusion layer FD₂ is provided in a region 45C of the semiconductorsubstrate 70 near the gate portion 45 of the transfer transistor TR2_(trs). The charge stored in the n-type semiconductor region 41 is readout to the second floating diffusion layer FD₂ through a transferchannel formed along the gate portion 45.

The second imaging element is further provided with a reset transistorTR2 _(rst), an amplification transistor TR2 _(amp), and a selectiontransistor TR2 _(sel) included in the control unit of the second imagingelement, on the first surface side of the semiconductor substrate 70.

The reset transistor TR2 _(rst) includes a gate portion, a channelformation region, and source/drain regions. The gate portion of thereset transistor TR2 _(rst) is connected to a reset line RST₂. Onesource/drain region of the reset transistor TR2 _(rst) is connected tothe power source V_(DD). The other source/drain region also serves asthe second floating diffusion layer FD₂.

The amplification transistor TR2 _(amp) includes a gate portion, achannel formation region, and source/drain regions. The gate portion isconnected to the other source/drain region (second floating diffusionlayer FD₂) of the reset transistor TR2 _(rst). In addition, onesource/drain region is connected to the power source V_(DD).

The selection transistor TR2 _(sel) includes a gate portion, a channelformation region, and source/drain regions. The gate portion isconnected to a selection line SEL₂. In addition, one source/drain regionshares the region with the other source/drain region included in theamplification transistor TR2 _(amp), and the other source/drain regionis connected to a signal line (data output line) VSL₂.

The third imaging element includes an n-type semiconductor region 43 asa photoelectric conversion layer provided on the semiconductor substrate70. A gate portion 46 of a transfer transistor TR3 _(trs) is connectedto a transfer gate line TG₃. In addition, a third floating diffusionlayer FD₃ is provided in a region 46C of the semiconductor substrate 70near the gate portion 46 of the transfer transistor TR3 _(trs). Thecharge stored in the n-type semiconductor region 43 is read out to thethird floating diffusion layer FD₃ through a transfer channel 46A formedalong the gate portion 46.

In the third imaging element, a reset transistor TR3 _(rst), anamplification transistor TR3 _(amp), and a selection transistor TR3_(sel) included in the control unit of the third imaging element arefurther provided on the first surface side of the semiconductorsubstrate 70.

The reset transistor TR3 _(rst) includes a gate portion, a channelformation region, and source/drain regions. The gate portion of thereset transistor TR3 _(rst) is connected to a reset line RST₃. Onesource/drain region of the reset transistor TR3 _(rst) is connected tothe power source V_(DD). The other source/drain region also serves asthe third floating diffusion layer FD₃.

The amplification transistor TR3 _(amp) includes a gate portion, achannel formation region, and source/drain regions. The gate portion isconnected to the other source/drain region (third floating diffusionlayer FD₃) of the reset transistor TR3 _(rst). In addition, onesource/drain region is connected to the power source V_(DD).

The selection transistor TR3 _(sel) includes a gate portion, a channelformation region, and source/drain regions. The gate portion isconnected to a selection line SEL₃. In addition, one source/drain regionshares the region with the other source/drain region included in theamplification transistor TR3 _(amp), and the other source/drain regionis connected to a signal line (data output line) VSL₃.

The reset lines RST₁, RST₂, and RST₃, the selection lines SEL₁, SEL₂,and SEL₃, and the transfer gate lines TG₂ and TG₃ are connected to thevertical drive circuit 112 included in the drive circuit. The signallines (data output lines) VSL₁, VSL₂, and VSL₃ are connected to a columnsignal processing circuit 113 included in the drive circuit.

A p⁺ layer 44 is provided between the n-type semiconductor region 43 andthe front surface 70A of the semiconductor substrate 70 to suppressgeneration of dark current. A p⁺ layer 42 is formed between the n-typesemiconductor region 41 and the n-type semiconductor region 43, andfurthermore, part of the side surface of the n-type semiconductor region43 is surrounded by the p⁺ layer 42. A p⁺ layer 73 is formed on the sideof a back surface 70B of the semiconductor substrate 70, and a HfO₂ film74 and an insulating film 75 include the p⁺ layer 73 to a part where thecontact hole portion 61 inside the semiconductor substrate 70 is to beformed. In the interlayer insulating layer 76, wires are formed across aplurality of layers, but the wires are not illustrated.

The HfO₂ film 74 is a film with negative fixed charge, and the film canbe provided to suppress the generation of dark current. Note that inplace of the HfO₂ film, an aluminum oxide (Al₂O₃) film, a zirconiumoxide (ZrO₂) film, a tantalum oxide (Ta₂O₅) film, a titanium oxide(TiO₂) film, a lanthanum oxide (La₂O₃) film, a praseodymium oxide(Pr₂O₃) film, a cerium oxide (CeO₂) film, a neodymium oxide (Nd₂O₃)film, a promethium oxide (Pm₂O₃) film, a samarium oxide (Sm₂O₃) film, aneuropium oxide (Eu₂O₃) film, a gadolinium oxide ((Gd₂O₃) film, a terbiumoxide (Tb₂O₃) film, a dysprosium oxide (Dy₂O₃) film, a holmium oxide(Ho₂O₃) film, a thulium oxide (Tm₂O₃) film, an ytterbium oxide (Yb₂O₃)film, a lutetium oxide (Lu₂O₃) film, an yttrium oxide (Y₂O₃) film, ahafnium nitride film, an aluminum nitride film, a hafnium oxynitridefilm, or an aluminum oxynitride film can also be used. Examples of adeposition method of these films include a CVD method, a PVD method, andan ALD method.

Hereinafter, an operation of the imaging element (first imaging element)of Embodiment 1 will be described with reference to FIGS. 8 and 9A. Theimaging element of Embodiment 1 further includes a control unit providedon the semiconductor substrate 70 and including a drive circuit, and thefirst electrode 11, the second electrode 12, the charge storageelectrode 14, and the charge movement control electrode 21 are connectedto the drive circuit. Here, the potential of the first electrode 11 ishigher than the potential of the second electrode 12. That is, forexample, the first electrode 11 is set to a positive potential, and thesecond electrode 12 is set to a negative potential. Electros generatedby the photoelectric conversion in the photoelectric conversion layer 13are read out to the floating diffusion layer. This similarly applies toother Embodiments. Note that in a mode in which the first electrode 11is set to a negative potential, the second electrode is set to apositive potential, and electron holes generated based on thephotoelectric conversion in the photoelectric conversion layer 13 areread out to the floating diffusion layer, it is only necessary toreverse the high and low of the potentials described below.

The signs used in FIG. 8 , FIGS. 51 and 52 in Embodiment 11 describedlater, and FIGS. 58 and 59 in Embodiment 12 are as follows. Note thatFIGS. 9A, 9B, and 9C are equivalent circuit diagrams of the imagingelements and the stacked imaging elements of Embodiment 1, Embodiment11, and Embodiment 12 for describing each section of FIG. 8 (Embodiment1), FIG. 51 (Embodiment 11), and FIG. 58 (Embodiment 12).

-   -   P_(A) . . . Potential at a point P_(A) of the region of the        photoelectric conversion layer 13 facing the region positioned        in the middle of the charge storage electrode 14 and the first        electrode 11 or in the middle of a transfer control electrode        (charge transfer electrode) 15 and the first electrode 11    -   P_(B) . . . Potential at a point P_(B) of the region of the        photoelectric conversion layer 13 facing the charge movement        control electrode 21    -   P_(C) . . . Potential at a point P_(C) of the region of the        photoelectric conversion layer 13 facing the charge storage        electrode 14    -   P_(C1) . . . Potential at a point P_(C1) of the region of the        photoelectric conversion layer 13 facing a charge storage        electrode segment 14A    -   P_(C2) . . . Potential at a point P_(C2) of the region of the        photoelectric conversion layer 13 facing a charge storage        electrode segment 14B    -   P_(C3) . . . Potential at a point P_(C3) of the region of the        photoelectric conversion layer 13 facing a charge storage        electrode segment 14C    -   P_(D) . . . Potential at a point P_(D) of the region of the        photoelectric conversion layer 13 facing the transfer control        electrode (charge transfer electrode) 15    -   FD . . . Potential of the first floating diffusion layer FD₁    -   V_(0A) . . . Potential of the charge storage electrode 14    -   V_(0A-A) . . . Potential of the charge storage electrode segment        14A    -   V_(0A-B) . . . Potential of the charge storage electrode segment        14B    -   V_(0A-C) . . . Potential of the charge storage electrode segment        14C    -   V_(0T) . . . Potential of the transfer control electrode (charge        transfer electrode) 15    -   RST . . . Potential of the gate portion 51 of the reset        transistor TR1 _(rst)    -   V_(DD) . . . Potential of the power source    -   VSL₁ . . . Signal line (data output line) VSL₁    -   TR1 _(rst) . . . Reset transistor TR1 _(rst)    -   TR1 _(amp) . . . Amplification transistor TR1 _(amp)    -   TR1 _(sel) . . . Selection transistor TR1 _(sel)

In a charge storage period, the drive circuit applies a potential V₁₁ tothe first electrode 11, applies a potential V₁₂ to the charge storageelectrode 14, and applies a potential V₁₃ to the charge movement controlelectrode 21. The light incident on the photoelectric conversion layer13 causes photoelectric conversion in the photoelectric conversion layer13. Electron holes generated by the photoelectric conversion are sentfrom the second electrode 12 to the drive circuit through a wire Vou. Onthe other hand, the potential of the first electrode 11 is higher thanthe potential of the second electrode 12. That is, for example, apositive potential is applied to the first electrode 11, and a negativepotential is applied to the second electrode 12. Therefore, thepotentials are set so that V₁₂>V₁₁, preferably, V₁₂>V₁₁, holds, andV₁₂>V₁₃ holds. As a result, the electrons generated by the photoelectricconversion are attracted to the charge storage electrode 14, and theelectrons stop at the region 13 c of the photoelectric conversion layer13 facing the charge storage electrode 14. That is, the charge is storedin the photoelectric conversion layer 13. V₁₂ is greater than V₁₁, andtherefore, the electrons generated inside the photoelectric conversionlayer 13 do not move toward the first electrode 11. In addition, V₁₂ isgreater than V₁₃, and therefore, the electrodes generated inside thephotoelectric conversion layer 13 do not move toward the charge movementcontrol electrode 21, either. That is, this can prevent the chargegenerated by the photoelectric conversion from flowing into the adjacentimaging element. In the time course of the photoelectric conversion, thepotential in the region of the photoelectric conversion layer 13 facingthe charge storage electrode 14 becomes a more negative value.

A reset operation is performed later in the charge storage period. Thisresets the potential of the first floating diffusion layer FD₁, and thepotential of the first floating diffusion layer FD₁ shifts to thepotential V_(DD) of the power source.

After the completion of the reset operation, the charge is read out.That is, in a charge transfer period, the drive circuit applies apotential V₂₁ to the first electrode 11, applies a potential V₂₂ to thecharge storage electrode 14, and applies a potential V₂₃ to the chargemovement control electrode 21. Here, the potentials are set so thatV₂₁>V₂₂>V₂₃ holds. As a result, the electrons stopped in the region ofthe photoelectric conversion layer 13 facing the charge storageelectrode 14 are read out to the first electrode 11 and further to thefirst floating diffusion layer FD₁. That is, the charge stored in thephotoelectric conversion layer 13 is read out to the control unit. Inaddition, V₂₂ is greater than V₂₃, and therefore, the electronsgenerated inside the photoelectric conversion layer 13 do not movetoward the charge movement control electrode 21. That is, this canprevent the charge generated by the photoelectric conversion fromflowing into the adjacent imaging element.

This completes the series of operations including the charge storage,the reset opertaion, and the charge transfer.

The operations of the amplification transistor TR1 _(amp) and theselection transistor TR1 _(sel) after the electrons are read out to thefirst floating diffusion layer FD₁ are the same as the operations ofconventional transistors. In addition, the series of operationsincluding the charge storage, the reset operation, and the chargetransfer of the second imaging element and the third imaging element aresimilar to the conventional series of operations including the chargestorage, the reset operation, and the charge transfer. In addition, thereset noise of the first floating diffusion layer FD₁ can be removed ina correlated double sampling (CDS) process as in a conventionaltechnique.

As described, the charge storage electrode arranged apart from the firstelectrode and arranged to face the photoelectric conversion layerthrough the insulating layer is provided in the imaging element ofEmbodiment 1 or Embodiments 2 to 8 described later. Therefore, in thephotoelectric conversion in the photoelectric conversion unit after thelight is applied to the photoelectric conversion unit, a kind ofcapacitor is formed by the photoelectric conversion layer, theinsulating layer, and the charge storage electrode. The charge can bestored in the photoelectric conversion layer. Therefore, the chargestorage portion can be fully depleted to delete the charge at the startof exposure. This can suppress the phenomenon of reduction in imagingquality caused by the degradation of random noise due to an increase inkTC noise. In addition, all pixels can be reset at once, and a so-calledglobal shutter function can be realized.

Moreover, when the photoelectric conversion occurs in the photoelectricconversion layer after the light enters the photoelectric conversionlayer in the imaging element of Embodiment 1, the absolute value of thepotential applied to the part of the photoelectric conversion layerfacing the charge storage electrode is a value larger than the absolutevalue of the potential applied to the region-B of the photoelectricconversion layer. Therefore, the charge generated by the photoelectricconversion is strongly attracted to the part of the photoelectricconversion layer facing the charge storage electrode. This can preventthe charge generated by the photoelectric conversion from flowing intothe adjacent imaging element, and the quality of the taken video (image)is not degraded. Alternatively, the charge movement control electrode isformed in the region facing the region-B of the photoelectric conversionlayer through the insulating layer, and the electric field and thepotential of the region-B of the photoelectric conversion layerpositioned on the upper side of the charge movement control electrodecan be controlled. As a result, the charge movement control electrodecan prevent the charge generated by the photoelectric conversion fromflowing into the adjacent imaging element, and the quality of the takenvideo (image) is not degraded.

FIG. 10 illustrates a conceptual diagram of the solid-state imagingapparatus of Embodiment 1. A solid-state imaging apparatus 100 ofEmbodiment 1 includes an imaging region 111 including stacked imagingelements 101 arranged in a two-dimensional array, the vertical drivecircuit 112 as a drive circuit (peripheral circuit) of the stackedimaging elements 101, the column signal processing circuit 113, ahorizontal drive circuit 114, an output circuit 115, a drive controlcircuit 116, and the like. Note that the circuits can include well-knowncircuits, or other circuit configurations (for example, various circuitsused in a conventional CCD solid-state imaging apparatus or CMOSsolid-state imaging apparatus) can be obviously used to provide thecircuits. Note that in FIG. 10 , reference number “101” is displayed inonly one line of the stacked imaging elements 101.

The drive control circuit 116 generates a clock signal and a controlsignal as references for operation of the vertical drive circuit 112,the column signal processing circuit 113, and the horizontal drivecircuit 114 based on a vertical synchronization signal, a horizontalsynchronization signal, and a master clock. In addition, the generatedclock signal and control signal are input to the vertical drive circuit112, the column signal processing circuit 113, and the horizontal drivecircuit 114.

The vertical drive circuit 112 includes, for example, a shift registerand sequentially selects and scans the stacked imaging elements 101 ofthe imaging region 111 row by row in the vertical direction. Inaddition, a pixel signal (image signal) based on a current (signal)generated according to an amount of light reception in each stackedimaging element 101 is transmitted to the column signal processingcircuit 113 through the signal line (data output line) 117, VSL.

The column signal processing circuit 113 is arranged for, for example,each column of the stacked imaging elements 101 and is configured to usesignals from black reference pixels (although not illustrated, formedaround effective pixel regions) to apply, for each imaging element,signal processing, such as noise removal and signal amplification, tothe image signals output from the stacked imaging elements 101 of oneline. A horizontal selection switch (not illustrated) is connected andprovided between an output stage of the column signal processing circuit113 and a horizontal signal line 118.

The horizontal drive circuit 114 includes, for example, a shift registerand sequentially outputs horizontal scan pulses to sequentially selectthe column signal processing circuits 113. The horizontal drive circuit114 outputs the signal from each column signal processing circuit 113 tothe horizontal signal line 118.

The output circuit 115 applies signal processing to the signalssequentially supplied from the column signal processing circuits 113through the horizontal signal line 118 and outputs the signals.

FIG. 11 illustrates an equivalent circuit diagram of a modified exampleof the imaging element and the stacked imaging element of Embodiment 1(Modified Example 2 of Embodiment 1), and FIG. 12 illustrates aschematic layout drawing of the first electrodes, the charge storageelectrodes, and the transistors of the control units included in themodified example of the imaging elements of Embodiment 1 (ModifiedExample 2 of Embodiment 1). In this way, the other source/drain region51B of the reset transistor TR1 _(rst) may be grounded, instead ofconnecting the other source/drain region 51B to the power source V_(DD).

The imaging element and the stacked imaging element of Embodiment 1 canbe produced by, for example, the following method. That is, an SOIsubstrate is first prepared. A first silicon layer is then formed on thesurface of the SOI substrate based on an epitaxial growth method, andthe p⁺ layer 73 and the n-type semiconductor region 41 are formed on thefirst silicon layer. Next, a second silicon layer is formed on the firstsilicon layer based on the epitaxial growth method, and the elementseparation region 71, the oxide film 72, the p⁺ layer 42, the n-typesemiconductor region 43, and the p⁺ layer 44 are formed on the secondsilicon layer. In addition, various transistors and the like included inthe control unit of the imaging element are formed on the second siliconlayer, and the wiring layer 62, the interlayer insulating layer 76, andvarious wires are further formed on top of that. The interlayerinsulating layer 76 and a support substrate (not illustrated) are thenpasted together. Subsequently, the SOI substrate is removed to exposethe first silicon layer. Note that the surface of the second siliconlayer corresponds to the front surface 70A of the semiconductorsubstrate 70, and the surface of the first silicon layer corresponds tothe back surface 70B of the semiconductor substrate 70. In addition, thefirst silicon layer and the second silicon layer are collectivelyexpressed as the semiconductor substrate 70. Next, an opening portionfor forming the contact hole portion 61 is formed on the back surface70B side of the semiconductor substrate 70, and the HfO₂ film 74, theinsulating film 75, and the contact hole portion 61 are formed.Furthermore, the pad portions 63, 64, and 22, the interlayer insulatinglayer 81, the connection holes 65, 66, and 23, the first electrode 11,the charge storage electrode 14, the charge movement control electrode21, and the insulating layer 82 are formed. Next, the connection portion67 is opened, and the photoelectric conversion layer 13, the secondelectrode 12, the protective layer 83, and the on-chip microlens 90 areformed. In this way, the imaging element and the stacked imaging elementof Embodiment 1 can be obtained.

FIG. 13 (Modified Example 3 of Embodiment 1), FIG. 14A (Modified Example4 of Embodiment 1), FIG. 14B, FIG. 15A (Modified Example 5 of Embodiment1), and FIG. 15B illustrate schematic layout drawings of other modifiedexamples of the first electrodes and the charge storage electrodesincluded in the imaging elements of Embodiment 1. In the examplesillustrated in these drawings, one common first electrode 11 is providedto correspond to four charge storage electrodes 14 in four imagingelements. Furthermore, in the example illustrated in FIG. 13 , thecharge movement control electrode 21 is formed below the part 82B of theinsulating layer 82 in the region (region-b) between the charge storageelectrode 14 and the charge storage electrode 14. On the other hand, inthe example illustrated in FIG. 14A, the charge movement controlelectrode 21 is formed below the part of the insulating layer 82 in theregion surrounded by four charge storage electrodes 14. The exampleillustrated in FIG. 15A is a combination of the examples illustrated inFIGS. 13 and 14A, and the example illustrated in FIG. 15B is acombination of the examples illustrated in FIGS. 14B and 15A. Note thatthe examples illustrated in FIGS. 13, 14A, 14B, 15A, and 15B alsorepresent the solid-state imaging apparatuses of the first configurationand the second configuration.

In the example illustrated in FIG. 14B, one common first electrode 11 isprovided to correspond to four charge storage electrodes 14 in fourimaging elements, and the charge movement control electrode 21 is formedbelow the part of the insulating layer 82 in the region surrounded bythe four charge storage electrodes 14. Furthermore, a dischargeelectrode 25 is formed below the part of the insulating layer 82 in theregion surrounded by the four charge storage electrodes 14. Thedischarge electrode 25 can be used as, for example, a floating diffusionor an overflow drain of the photoelectric conversion layer 13. Thedischarge electrode 25 and the photoelectric conversion layer 13 areconnected through the opening portion provided on the insulating layer82. That is, similar to the relationship between the photoelectricconversion layer 13 and the first electrode 11, the photoelectricconversion layer 13 extends in the opening portion provided on theinsulating layer 82, and the extended part of the photoelectricconversion layer 13 is in contact with the discharge electrode 25. Thedischarge electrode 25 is connected to the vertical drive circuit 112included in the drive circuit through the connection hole 25A, the padportion 25B, and a wire (not illustrated) provided in the interlayerinsulating layer 81. The discharge electrode 25 can also be applied toother Embodiments. Note that, for reference, FIG. 16B illustrates aschematic cross-sectional view taken along a one-dot chain line A-A ofFIG. 15A when the charge movement control electrode 21 is replaced withthe discharge electrode 25 in Modified Example 5 of Embodiment 1illustrated in FIG. 15A.

Alternatively, in the example illustrated in FIG. 15B, one common firstelectrode 11 is provided to correspond to four charge storage electrodes14 in four imaging elements, and the charge movement control electrode21 is formed below the part of the insulating layer in the regionpositioned between the charge storage electrodes 14. Furthermore, thedischarge electrode 25 is formed below the part of the insulating layer82 in the region surrounded by the four charge storage electrodes 14.The discharge electrode 25 and the photoelectric conversion layer 13 areconnected through the opening portion provided on the insulating layer82. That is, similar to the relationship between the photoelectricconversion layer 13 and the first electrode 11, the photoelectricconversion layer 13 extends in the opening portion provided on theinsulating layer 82, and the extended part of the photoelectricconversion layer 13 is in contact with the discharge electrode 25. FIG.16A illustrates a schematic cross-sectional view taken along a one-dotchain line B-B of FIG. 15B in Modified Example 5 of Embodiment 1illustrated in FIG. 15B.

Alternatively, FIG. 1B illustrates a schematic cross-sectional view ofpart of a modified example (Modified Example 6 of Embodiment 1) of theimaging elements of Embodiment 1 (two imaging elements arranged side byside), and the photoelectric conversion layer can have a stackedstructure of a lower semiconductor layer 13 _(DN) and an upperphotoelectric conversion layer 13 _(UP). The upper photoelectricconversion layer 13 _(UP) and the lower semiconductor layer 13 _(DN) areshared by a plurality of imaging elements. That is, one upperphotoelectric conversion layer 13 _(UP) and one lower semiconductorlayer 13 _(DN) are formed in a plurality of imaging elements. The lowersemiconductor layer 13 _(DN) can be provided in this way to prevent, forexample, recombination during charge storage. This can also increase thecharge transfer efficiency of the charge stored in the photoelectricconversion layer 13 to the first electrode 11. Furthermore, the chargegenerated in the photoelectric conversion layer 13 can be temporarilyheld to control the timing and the like of the transfer. In addition,the generation of dark current can be suppressed. The material includedin the upper photoelectric conversion layer 13 _(UP) can beappropriately selected from various materials included in thephotoelectric conversion layer 13. On the other hand, it is preferablethat the material included in the lower semiconductor layer 13 _(DN) bea material with a large value of band-gap energy (for example, band-gapenergy with a value equal to or greater than 3.0 eV) and with mobilityhigher than the material included in the photoelectric conversion layer,and specifically, an example of the material includes an oxidesemiconductor material such as IGZO. Alternatively, another example ofthe material included in the lower semiconductor layer 13 _(DN) includesa material with ionization potential larger than the ionizationpotential of the material included in the photoelectric conversion layerin the case where the charge to be stored is electrons. Alternatively,it is preferable that the impurity concentration of the materialincluded in the lower semiconductor layer be equal to or smaller than1×10¹⁸ cm⁻³. Note that the configuration and the structure of ModifiedExample 6 of Embodiment 1 can be applied to other Embodiments.

Embodiment 2

Embodiment 2 relates to the imaging element and the like according tothe second aspect of the present disclosure. FIG. 17A illustrates aschematic cross-sectional view of part of the imaging elements ofEmbodiment 2 (two imaging elements arranged side by side). In theimaging element of Embodiment 2, a width W_(A) of a region 13A of thephotoelectric conversion layer 13 (region-A of photoelectric conversionlayer) positioned between the first electrode 11 and the charge storageelectrode 14 is narrower than a width W_(B) of the region 13B of thephotoelectric conversion layer 13 (region-B of photoelectric conversionlayer) positioned between the imaging element and the adjacent imagingelement. An example of the value of (W_(A)/W_(B)) includes

½≤(W _(A) /W _(B))<1,

and specifically, the value is

(W _(A) /W _(B))=⅔

-   -   in Embodiment 2.

Except for this, the configuration and the structure in the imagingelement of Embodiment 2 can be similar to the imaging element with basicstructure of the present disclosure, and the details will not bedescribed.

In this way, the width of the region of the photoelectric conversionlayer positioned between the first electrode and the charge storageelectrode is narrower than the width W_(B) of the region of thephotoelectric conversion layer positioned between the imaging elementand the adjacent imaging element in the imaging element of Embodiment 2.This can prevent the charge generated by the photoelectric conversionfrom flowing into the adjacent imaging element, and the quality of thetaken video (image) is not degraded.

Embodiment 3

Embodiment 3 relates to the imaging element and the like according tothe fourth aspect of the present disclosure. FIG. 17B illustrates aschematic cross-sectional view of part of the imaging elements ofEmbodiment 3 (two imaging elements arranged side by side), and FIGS. 19and 20 illustrate schematic plan views of part of the imaging elementsof Embodiment 3 (2×2 imaging elements arranged side by side). In theimaging element of Embodiment 3, the charge movement control electrode24 is formed, in place of the second electrode 12, over the region 13Bof the photoelectric conversion layer 13 positioned between the imagingelement and the adjacent imaging element. The charge movement controlelectrode 24 is provided apart from the second electrode 12. In otherwords, the second electrode 12 is provided for each imaging element, andthe charge movement control electrode 24 is provided around at leastpart of the second electrode 12, apart from the second electrode 12,over the region-B of the photoelectric conversion layer 13. The chargemovement control electrode 24 is formed in the same level as the secondelectrode 12.

In addition, as in FIG. 18A illustrating a schematic cross-sectionalview of part of the imaging elements of Embodiment 3 (two imagingelements arranged side by side), the second electrode 12 may be dividedinto a plurality of second electrodes 12, and different potentials maybe separately applied to the divided second electrodes 12. Furthermore,as illustrated in FIG. 18B, the charge movement control electrode 24 maybe provided between the divided second electrode 12 and second electrode12.

Note that in an example illustrated in FIG. 19 , one charge storageelectrode 14 is provided to correspond to one first electrode 11 in oneimaging element. On the other hand, in an example illustrated in FIG. 20(Modified Example 1 of Embodiment 3), one common first electrode 11 isprovided to correspond to two charge storage electrodes 14 in twoimaging elements. The schematic cross-sectional view of part of theimaging elements of Embodiment 3 (two imaging elements arranged side byside) illustrated in FIG. 17B corresponds to FIG. 20 .

In Embodiment 3, the second electrode 12 positioned on the lightincident side is shared by the imaging elements arranged in the left andright direction of FIG. 19 and is shared by a pair of imaging elementsarranged in the up and down direction of FIG. 19 . In addition, thecharge movement control electrode 24 is also shared by the imagingelements arranged in the left and right direction of FIG. 19 and isshared by a pair of imaging elements arranged in the up and downdirection of FIG. 19 . The second electrode 12 and the charge movementcontrol electrode 24 can be obtained by depositing a material layer ofthe second electrode 12 and the charge movement control electrode 24 onthe photoelectric conversion layer 13 and then patterning the materiallayer. The second electrode 12 and the charge movement control electrode24 are separately connected to wires (not illustrated), and the wiresare connected to the drive circuit. The wire connected to the secondelectrode 12 is shared by a plurality of imaging elements. The wireconnected to the charge movement control electrode 24 is also shared bya plurality of imaging elements.

In the imaging element of Embodiment 3, the drive circuit applies apotential V₂′ to the second electrode 12 and applies a potential V₁₃′ tothe charge movement control electrode 24, and the charge is stored inthe photoelectric conversion layer 13 in the charge storage period. Inthe charge transfer period, the drive circuit applies a potential V₂″ tothe second electrode 12 and applies a potential V₂₃″ to the chargemovement control electrode 24, and the charge stored in thephotoelectric conversion layer 13 is read out to the control unitthrough the first electrode 11. Here, the potential of the firstelectrode 11 is higher than the potential of the second electrode 12,and therefore,

V ₂ ′≥V ₁₃′ and V ₂ ″≥V ₂₃″

-   -   hold.

Meanwhile, the following problem may occur in the structure providedwith the charge movement control electrode 21 adjacent to the firstelectrode 11 as illustrated in FIG. 1 . That is, in the charge storageperiod, the drive circuit applies the potential V₁₁ to the firstelectrode 11, applies the potential V₁₂ to the charge storage electrode14, applies the potential V₁₃ to the charge movement control electrode21, and applies a potential V₂ to the second electrode 12. Here, forexample, V₁₂>V₁₁>V₂ and V₁₂>V₁₃>V₂ hold. The potential inside thephotoelectric conversion layer 13 positioned on the upper side of thefirst electrode 11 is indicated by “A” in FIGS. 21A and 21B. On theother hand, the potential inside the photoelectric conversion layer 13positioned on the upper side of the charge movement control electrode 21would simply change as indicated by “B” in FIG. 21A in a case where thepotential V₁₃ is applied to the charge movement control electrode 21 andthe potential is not applied to the charge storage electrode 14.However, the potential V₁₂ is applied to the charge storage electrode14, and the potential changes as indicated by “C” in FIG. 21A due to theinfluence of the charge storage electrode 14. That is, inside theinsulating layer 82, the potential decreases toward the charge movementcontrol electrode 21. As a result, the electron holes are stored in theregion of the insulating layer 82 on the upper side of the chargestorage electrode 14 in the charge storage period, and the chargegenerated by the photoelectric conversion may be weakly attracted to thepart of the photoelectric conversion layer facing the charge storageelectrode.

On the other hand, in Embodiment 3, the charge movement controlelectrode 24 is formed in the same level as the second electrode 12, andthe potential V₁₃′ is applied to the charge movement control electrode24. Therefore, the potential inside the photoelectric conversion layer13 positioned on the lower side of the charge movement control electrode24 simply increases as indicated by “B” in FIG. 21B. In addition, thereis no charge movement control electrode 21 on the lower side of thephotoelectric conversion layer 13 positioned on the lower side of thecharge movement control electrode 24, and the potential further simplyincreases inside the insulating layer 82. As a result, the electronholes are not stored in the region of the insulating layer 82 on thelower side of the charge movement control electrode 24 in the chargestorage period, and this can prevent the phenomenon that the chargegenerated by the photoelectric conversion is weakly attracted to thepart of the photoelectric conversion layer facing the charge storageelectrode. This can more certainly prevent the degradation in thequality of the taken video (image).

In this way, the charge movement control electrode is formed, in placeof the second electrode, over the region of the photelectric conversionlayer positioned between the imaging element and the adjacent imagingelement in the imaging element of Embodiment 3. Therefore, the chargemovement control electrode can prevent the charge generated by thephotoelectric conversion from flowing into the adjacent imaging element,and the quality of the taken video (image) is not degraded.

FIGS. 22A and 22B illustrate schematic plan views of part of a modifiedexample of the imaging element of Embodiment 3 (Modified Example 2 ofEmbodiment 3). Note that FIGS. 22A, 23A, 25A, 26A, 27A, and 28Aillustrate examples in which one common first electrode 11 is providedto correspond to four charge storage electrodes 14 in four imagingelements. In addition, as illustrated in FIG. 22B, the second electrode12 is provided on the upper side of the charge storage electrode 14, insubstantially the same size as the charge storage electrode 14. Thesecond electrode 12 is surrounded by the charge movement controlelectrode 24. The charge movement control electrode 24 is shared by theimaging elements. An insulating film (not illustrated) is formed overthe photoelectric conversion layer 13 including the second electrode 12and the charge movement control electrode 24, and a contact hole (notillustrated) connected to the second electrode 12 is formed on theinsulating film on the upper side of the second electrode 12. A wire Vou(not illustrated) connected to the contact hole is provided on theinsulating film. Note that the configurations and the structures of thesecond electrode 12, the insulating film, the contact hole, and the wireVou are similar in the following modified examples. In addition, theexamples illustrated in FIGS. 22A, 22B, 23A, 23B, 23C, 25A, 25B, 26A,26B, 27A, 27B, 28A, and 28 also represent the solid-state imagingapparatuses of the first and second configurations.

FIGS. 23A, 23B, and 23C illustrate schematic plan views of part ofModified Example 3 of Embodiment 3. As illustrated in FIGS. 23B and 23C,the second electrode 12 is provided on the upper side of the chargestorage electrode 14, in substantially the same size as the chargestorage electrode 14. The second electrode 12 is surrounded by thecharge movement control electrode 24. The charge movement controlelectrode 24 is shared by four imaging elements. The shared part isformed on the photoelectric conversion layer 13. Note that in theexample illustrated in FIG. 23C, the second electrode 12 extends to thesecond electrode of the adjacent imaging element.

FIG. 24A illustrates a schematic cross-sectional view of part of amodified example (Modified Example 4A of Embodiment 3) of the imagingelements of Embodiment 3 (two imaging elements arranged side by side),and FIGS. 25A and 25B illustrate schematic plan views of the part. InModified Example 4A of Embodiment 3, the second electrode 12 is providedfor each imaging element, and the charge movement control electrode 24is provided around at least part of the second electrode 12 or apartfrom the second electrode 12. Part of the charge storage electrode 14exists on the lower side of the charge movement control electrode 24.The second electrode 12 is provided on the upper side of the chargestorage electrode 14, in a size smaller than the charge storageelectrode 14.

FIG. 24B illustrates a schematic cross-sectional view of part of amodified example (Modified Example 4B of Embodiment 3) of the imagingelements of Embodiment 3 (two imaging elements arranged side by side),and FIGS. 26A and 26B illustrate schematic plan views of the part. InModified Example 4B, the second electrode 12 is provided for eachimaging element, and the charge movement control electrode 24 isprovided around at least part of the second electrode 12 or apart fromthe second electrode 12. Part of the charge storage electrode 14 existson the lower side of the charge movement control electrode 24, andfurthermore, the charge movement control electrode (lower chargemovement control electrode) 21 is provided on the lower side of thecharge movement control electrode (upper charge movement controlelectrode 24). The size of the second electrode 12 is smaller than inModified Example 4A. That is, the region of the second electrode 12facing the charge movement control electrode 24 is positioned closer tothe first electrode 11 compared to the region of the second electrode 12facing the charge movement control electrode 24 in Modified Example 4A.The charge storage electrode 14 is surrounded by the charge movementcontrol electrode 21.

FIGS. 27A and 27B illustrate schematic plan views of part of a modifiedexample of the imaging element of Embodiment 3 (Modified Example 4C ofEmbodiment 3). In Modified Example 4C, part of the charge storageelectrode 14 exists on the lower side of the charge movement controlelectrode 24 as in Modified Example 4B of Embodiment 3. The size of thesecond electrode 12 is smaller than in Modified Example 4A. That is, theregion of the second electrode 12 facing the charge movement controlelectrode 24 is positioned closer to the first electrode 11 compared tothe region of the second electrode 12 facing the charge movement controlelectrode 24 in Modified Example 4A. In addition, the charge movementcontrol electrode 24 includes an outer charge movement control electrode24 ₁ and an inner charge movement control electrode 242 provided betweenthe outer charge movement control electrode 24 ₁ and the secondelectrode 12. The charge storage electrode 14 is surrounded by thecharge movement control electrode 21. In the charge transfer period, arelationship (potential applied to outer charge movement controlelectrode 24 ₁)<(potential applied to inner charge movement controlelectrode 242)<(potential applied to second electrode 11) can besatisfied to more effectively transfer the charge.

FIGS. 28A and 28B illustrate schematic plan views of part of a modifiedexample of the imaging element of Embodiment 3 (Modified Example 4D ofEmbodiment 3). In Modified Example 4D, the charge movement controlelectrode (lower charge movement control electrode) 21 is provided onthe lower side of the charge movement control electrode (upper chargemovement control electrode) 24 as in Modified Example 4B of Embodiment3. The size of the second electrode 12 is smaller than in ModifiedExample 4B. That is, the region of the second electrode 12 facing thecharge movement control electrode 24 is positioned closer to the firstelectrode 11 compared to the region of the second electrode 12 facingthe charge movement control electrode 24 in Modified Example 4B. Inaddition, the interval between the charge movement control electrode 24and the second electrode 12 is wider than in Modified Example 4B. Thecharge storage electrode 14 is surrounded by the charge movement controlelectrode 21. The potential generated by coupling of the charge movementcontrol electrode 24 and the second electrode 12 is applied to theregion of the photoelectric conversion layer 13 positioned below theregion between the charge movement control electrode 24 and the secondelectrode 12.

FIGS. 29A, 29B, and 29C schematically illustrate states of the potentialin each section (during charge transfer) in Modified Example 4B ofEmbodiment 3, Modified Example 4C of Embodiment 3, and Modified Example4D of Embodiment 3, respectively.

Embodiment 4

Embodiment 4 relates to the imaging element and the like according tothe fifth aspect of the present disclosure. FIG. 30 illustrates aschematic cross-sectional view of part of the imaging elements ofEmbodiment 4 (two imaging elements arranged side by side). In theimaging element of Embodiment 4, a value ε_(A) of the dielectricconstant of an insulating material (insulating material-A) 82 _(A)′included in a region (region-a) 82 _(A) between the first electrode 11and the charge storage electrode 14 [specifically, region 82 _(A) of theinsulating layer 82 positioned between the first electrode 11 and thecharge storage electrode 14] is higher than a value ε_(B) of thedielectric constant of an insulating material (insulating material-B) 82_(B)′ included in the region (region-b) 82 _(B) between the imagingelement and the adjacent imaging element [specifically, region 82 _(B)of the insulating layer 82 positioned between the imaging element andthe adjacent imaging element]. The insulating material-A (82 _(A)′) andthe insulating material-B (82 _(B)′) are formed in the level of theinsulating layer 82 covering the charge storage electrode 14. That is,when the insulating layer 82 is expressed by two layers including alower insulating layer filling the gap between the charge storageelectrode 14 and the charge storage electrode 14 and an upper layerinsulating layer covering the charge storage electrode 14 and formedover the lower insulating layer, the insulating material-A (82 _(A)′)and the insulating material-B (82 _(B)′) fill part of the upperinsulating layer [specifically, part of the upper insulating layer inthe region 82 _(A) of the insulating layer 82 positioned between thefirst electrode 11 and the charge storage electrode 14 and part of theupper insulating layer in the region (region-b) 82 _(B) between theimaging element and the adjacent imaging element].

The imaging element and the stacked imaging element of Embodiment 4 canbe obtained by also forming the regions 82 _(A) and 82 _(B) of theinsulating layer 82 containing the insulating material-A (82 _(A)′) andthe insulating material-B (82 _(B)′) when forming the insulating layer82 in the manufacturing process of the imaging element and the stackedimaging element of Embodiment 1.

In the imaging element of Embodiment 4, the value of the dielectricconstant of the insulating material included in the region between thefirst electrode and the charge storage electrode is higher than thevalue of the dielectric constant of the insulating material included inthe region between the imaging element and the adjacent imaging element.Therefore, the capacity of a capacitor-A is larger than the capacity ofa capacitor-B, and the charge is more attracted toward the regionbetween the first electrode and the charge storage electrode than towardthe region between the imaging element and the adjacent imaging element.This can prevent the charge generated by the photoelectric conversionfrom flowing into the adjacent imaging element, and the quality of thetaken video (image) is not degraded.

FIG. 31 illustrates a schematic cross-sectional view of part of amodified example of the imaging elements of Embodiment 4 (two imagingelements arranged side by side), and FIGS. 32 and 33 illustrateschematic cross-sectional views of part of other modified examples. Notethat the formation positions of the insulating material-A (82 _(A)′) andthe insulating material-B (82 _(B)′) illustrated in FIGS. 30, 31, 32,and 33 can be appropriately combined.

In the example illustrated in FIG. 31 , the insulating material-A (82_(A)′) fills the part of the upper insulating layer on the chargestorage electrode 14 from the region 82 _(A) of the insulating layer 82positioned between the first electrode 11 and the charge storageelectrode 14, and the insulating material-B (82 _(B)′) fills the part ofthe upper insulating layer in the region (region-b) 82 _(B) between theimaging element and the adjacent imaging element.

In the example illustrated in FIG. 32 , the insulating material-A (82_(A)′) fills the part of the lower insulating layer in the region 82_(A) of the insulating layer 82 positioned between the first electrode11 and the charge storage electrode 14, and the insulating material-B(82 _(B)′) fills the part of the lower insulating layer in the region(region-b) 82 _(B) between the imaging element and the adjacent imagingelement.

In the example illustrated in FIG. 33 , the insulating material-A (82_(A)′) fills the part of the interlayer insulating layer 81 positionedbelow the region 82 _(A) of the insulating layer 82 positioned betweenthe first electrode 11 and the charge storage electrode 14, and theinsulating material-B (82 _(B)′) fills the part of the interlayerinsulating layer 81 positioned below the region (region-b) 82 _(B)between the imaging element and the adjacent imaging element.

Embodiment 5

Embodiment 5 relates to the imaging element and the like according tothe sixth aspect of the present disclosure. FIG. 34 illustrates aschematic cross-sectional view of part of the imaging elements ofEmbodiment 5 (two imaging elements arranged side by side). In theimaging element of Embodiment 5, a thickness t_(In-A) of the region 82_(A) of the insulating layer 82 (region-A of insulating layer)positioned between the first electrode 11 and the charge storageelectrode 14 is thinner than a thickness t_(In-B) of the region 82 _(B)of the insulating layer 82 (region-B of insulating layer) positionedbetween the imaging element and the adjacent imaging element. An exampleof the value of (t_(in-A)/t_(in-B)) includes

½≤(t _(In-A) /t _(In-B))<1,

and specifically, the value is

(t _(In-A) /t _(In-B))=0.9.

The imaging element and the stacked imaging element of Embodiment 5 canbe obtained by controlling the thickness in the regions 82 _(A) and 82_(B) of the insulating layer 82 (for example, controlling the thicknessbased on etching) when forming the insulating layer 82 in themanufacturing process of the imaging element and the stacked imagingelement of Embodiment 1.

In the imaging element of Embodiment 5, the thickness of the region ofthe insulating layer positioned between the first electrode and thecharge storage electrode is thinner than the thickness of the region ofthe insulating layer positioned between the imaging element and theadjacent imaging element. Therefore, the capacity of the capacitor-A islarger than the capacity of the capacitor-B, and the charge is moreattracted toward the region of the insulating layer positioned betweenthe first electrode and the charge storage electrode than toward theregion of the insulating layer positioned between the imaging elementand the adjacent imaging element. This can prevent the charge generatedby the photoelectric conversion from flowing into the adjacent imagingelement, and the quality of the taken video (image) is not degraded.

FIG. 35 illustrates a schematic cross-sectional view of part of amodified example of the imaging elements of Embodiment 5 (two imagingelements arranged side by side), and FIG. 36 illustrates a schematiccross-sectional view of part of another modified example.

In the modified example illustrated in FIG. 35 , the thickness t_(In-A)of the region 82 _(A) of the insulating layer 82 (region-A of insulatinglayer) positioned between the first electrode 11 and the charge storageelectrode 14 is thinner than the thickness t_(In-B) of the region 82_(B) of the insulating layer 82 (region-B of insulating layer)positioned between the imaging element and the adjacent imaging element.However, the level of the top surface of the insulating layer 82 abovethe charge storage electrode 14 is the same level as the level of thetop surface of the insulating layer 82 in the region-B of the insulatinglayer.

In the modified example illustrated in FIG. 36 , the level of the topsurface of the insulating layer 82 in the region-B of the insulatinglayer is the same level as the level of the top surface of theinsulating layer 82 above the charge storage electrode 14 included inone of the imaging elements (imaging element positioned on the right inFIG. 36 ). However, the top surface is in a level higher than the levelof the top surface of the insulating layer 82 above the charge storageelectrode 14 included in the other imaging element (imaging elementpositioned on the left in FIG. 36 ). In addition, the level of the topsurface of the insulating layer 82 in the region-A of the insulatinglayer is the same level as the level of the top surface of theinsulating layer 82 above the charge storage electrode 14 included inthe other imaging element. However, the top surface is in a level lowerthan the level of the top surface of the insulating layer 82 above thecharge storage electrode 14 included in the one of the imaging elements.

Embodiment 6

Embodiment 6 relates to the imaging element and the like according tothe seventh aspect of the present disclosure. FIG. 37 illustrates aschematic cross-sectional view of part of the imaging elements ofEmbodiment 6 (two imaging elements arranged side by side). In theimaging element of Embodiment 6, a thickness t_(Pc-A) of the region 13Aof the photoelectric conversion layer 13 (region-A of photoelectricconversion layer 13) positioned between the first electrode 11 and thecharge storage electrode 14 is thicker than a thickness t_(Pc-B) of theregion 13B of the photoelectric conversion layer 13 (region-B ofphotoelectric conversion layer 13) positioned between the imagingelement and the adjacent imaging element. An example of the value of(t_(Pc-A)/t_(Pc-B)) includes

1<(t _(Pc-A) /t _(Pc-B))≤2,

and specifically, the value is

(t _(Pc-A) /t _(Pc-B))=1.25.

The imaging element and the stacked imaging element of Embodiment 6 canbe obtained by controlling the thickness in the regions 13A and 13B ofthe photoelectric conversion layer 13 (for example, controlling thethickness based on etching) when forming the photoelectric conversionlayer 13 in the manufacturing process of the imaging element and thestacked imaging element of Embodiment 1.

In the imaging element of Embodiment 6, the thickness of the region ofthe photoelectric conversion layer positioned between the firstelectrode and the charge storage electrode is thicker than the thicknessof the region of the photoelectric conversion layer positioned betweenthe imaging element and the adjacent imaging element. This can preventthe charge generated by the photoelectric conversion from flowing intothe adjacent imaging element, and the quality of the taken video (image)is not degraded.

FIG. 38 illustrates a schematic cross-sectional view of part of amodified example of the imaging elements of Embodiment 6 (two imagingelements arranged side by side), and the value of t_(Pc-B) may be 0depending on the case. That is, the region of the photoelectricconversion layer 13 positioned between the imaging element and theadjacent imaging element may not exist depending on the case.

Embodiment 7

Embodiment 7 relates to the imaging element and the like according tothe eighth aspect of the present disclosure. FIG. 39 illustrates aschematic cross-sectional view of part of the imaging elements ofEmbodiment 7 (two imaging elements arranged side by side). In theimaging element of Embodiment 7, a fixed charge amount FC_(A) in theregion of the interface between the photoelectric conversion layer 13A(region-A of photoelectric conversion layer 13) and the insulating layer82 _(A) (region-A of insulating layer 82) positioned between the firstelectrode 11 and the charge storage electrode 14 is less than a fixedcharge amount FC_(B) in the region of the interface between thephotoelectric conversion layer 13B (region-B of photoelectric conversionlayer 13) and the insulating layer 82 _(B) (region-B of insulating layer82) positioned between the imaging element and the adjacent imagingelement. An example of the value of (FC_(A)/FC_(B)) includes

1/10≤(FC_(A)/FC_(B))<1.

In FIG. 39 , black circles indicate the charge (electron holes)generated at the interface of the insulating layer. The fixed chargeamount in the region of the interface between the photoelectricconversion layer 13 and the insulating layer 82 can be controlled basedon, for example, a method of depositing a thin film with fixed charge.

In the imaging element of Embodiment 7, the fixed charge amount in theregion of the interface between the photoelectric conversion layer andthe insulating layer positioned between the first electrode and thecharge storage electrode is less than the fixed charge amount in theregion of the interface between the photoelectric conversion layer andthe insulating layer positioned between the imaging element and theadjacent imaging element. This can prevent the charge generated by thephotoelectric conversion from flowing into the adjacent imaging element,and the quality of the taken video (image) is not degraded.

Embodiment 8

Embodiment 8 relates to the imaging element and the like according tothe ninth aspect of the present disclosure. FIG. 40 illustrates aschematic cross-sectional view of part of the imaging elements ofEmbodiment 8 (two imaging elements arranged side by side). In theimaging element of Embodiment 8, the value of charge mobility CT_(A) inthe region of the photoelectric conversion layer 13 _(A) (region-A ofphotoelectric conversion layer 13) positioned between the firstelectrode 11 and the charge storage electrode 14 is larger than thevalue of charge mobility CT_(B) in the region 13B of the photoelectricconversion layer 13 (region-B of photoelectric conversion layer 13)positioned between the imaging element and the adjacent imaging element.An example of the value of (CT_(A)/CT_(B)) includes

1<(CT _(A) /CT _(B))≤1×10².

Specifically, the value is

(CT _(A) /CT _(B))=2.

The imaging element and the stacked imaging element of Embodiment 8 canbe obtained by forming the regions 13 _(A) and 13 _(B) of thephotoelectric conversion layer 13 by using a material with therelationship of the charge mobility CT_(A) and the charge mobilityCT_(B) described above as a material included in the regions 13 _(A) and13 _(B) of the photoelectric conversion layer 13 in forming thephotoelectric conversion layer 13 in the manufacturing process of theimaging element and the stacked imaging element of Embodiment 1.

In the imaging element of Embodiment 8, the value of the charge mobilityin the region of the photoelectric conversion layer positioned betweenthe first electrode and the charge storage electrode is larger than thevalue of the charge mobility in the region of the photoelectricconversion layer positioned between the imaging element and the adjacentimaging element. This can prevent the charge generated by thephotoelectric conversion from flowing into the adjacent imaging element,and the quality of the taken video (image) is not degraded.

FIG. 41 illustrates a schematic cross-sectional view of part of amodified example of the imaging elements of Embodiment 8 (two imagingelements arranged side by side). In the modified example illustrated inFIG. 41 , part of the photoelectric conversion layer 13 has a two-layerconfiguration of an upper layer (upper photoelectric conversion layer)13 _(UP)′/a lower layer (lower semiconductor layer) 13 _(DN)′. The upperlayer of the region-A (13 _(A)) of the photoelectric conversion layer 13and the upper layer 13 _(UP)′ of the region-B (13B) of the photoelectricconversion layer and the part of the photoelectric conversion layer 13positioned on the upper side of the charge storage electrode 14 containthe same material (upper layer constituent material). In addition, thelower layer 13 _(DN)′ of the region-A (13 _(A)) of the photoelectricconversion layer and the lower layer 13 _(DN)′ of the part of thephotoelectric conversion layer 13 positioned on the upper side of thecharge storage electrode 14 contain the same material (lower layerconstituent material). However, the upper layer constituent material andthe lower layer constituent material are different. The lower layer 13_(DN)′ can be provided in this way to prevent, for example,recombination during charge storage. This can also increase the chargetransfer efficiency of the charge stored in the photoelectric conversionlayer 13 to the first electrode 11. Furthermore, the charge generated inthe photoelectric conversion layer 13 can be temporarily held to controlthe timing and the like of the transfer. In addition, the generation ofdark current can be suppressed.

Embodiment 9

Embodiment 9 is a modification of Embodiments 1 to 8. An imaging elementand a stacked imaging element of Embodiment 9 illustrated in a schematicpartial cross-sectional view of FIG. 42 are front illuminated typeimaging element and stacked imaging element. The imaging element and thestacked imaging element have a stacked structure of three imagingelements including: a green light imaging element of first type inEmbodiment 1 (first imaging element) sensitive to green light, the greenlight imaging element including a green light photoelectric conversionlayer of first type for absorbing green light; a conventional blue lightimaging element of second type (second imaging element) sensitive toblue light, the blue light imaging element including a blue lightphotoelectric conversion layer of second type for absorbing blue light;and a conventional red light imaging element of second type (thirdimaging element) sensitive to red light, the red light imaging elementincluding a red light photoelectric conversion layer of second type forabsorbing red light. Here, the red light imaging element (third imagingelement) and the blue light imaging element (second imaging element) areprovided in the semiconductor substrate 70, and the second imagingelement is positioned on the light incident side with respect to thethird imaging element. In addition, the green light imaging element(first imaging element) is provided on the upper side of the blue lightimaging element (second imaging element).

Various transistors included in the control unit are provided on thefront surface 70A side of the semiconductor substrate 70 as inEmbodiment 1. The transistors can have configurations and structuressubstantially similar to the transistors described in Embodiment 1. Inaddition, the second imaging element and the third imaging element areprovided on the semiconductor substrate 70, and the imaging elements canalso have configurations and structures substantially similar to thesecond imaging element and the third imaging element described inEmbodiment 1.

Interlayer insulating layers 77 and 78 are formed on the front surface70A of the semiconductor substrate 70, and the photoelectric conversionunit (first electrode 11, photoelectric conversion layer 13, and secondelectrode 12), the charge storage electrode 14, and the like included inthe imaging element of Embodiment 1 are provided on the interlayerinsulating layer 78.

In this way, the configurations and the structures of the imagingelement and the stacked imaging element of Embodiment 9 can be similarto the configurations and the structures of the imaging element and thestacked imaging element of Embodiment 1 except that the imaging elementand the stacked imaging element are front illuminated type imagingelement and stacked imaging element, and the details will not bedescribed.

Embodiment 10

Embodiment 10 is a modification of Embodiments 1 to 9.

An imaging element and a stacked imaging element of Embodiment 10illustrated in a schematic partial cross-sectional view of FIG. 43 isback illuminated type imaging element and stacked imaging element. Theimaging element and the stacked imaging element have a stacked structureof two imaging elements including the first imaging element of firsttype in Embodiment 1 and the second imaging element of second type. Inaddition, a modified example of the imaging element and the stackedimaging element of Embodiment 10 illustrated in a schematic partialcross-sectional view of FIG. 44 provides front illuminated type imagingelement and stacked imaging element. The imaging element and the stackedimaging element have a stacked structure of two imaging elementsincluding the first imaging element of first type in Embodiment 1 andthe second imaging element of second type. Here, the first imagingelement absorbs light of primary colors, and the second imaging elementabsorbs light of complementary colors. Alternatively, the first imagingelement absorbs white light, and the second imaging element absorbsinfrared rays.

A modified example of the imaging element of Embodiment 10 illustratedin a schematic partial cross-sectional view of FIG. 45 is a backilluminated type imaging element. The imaging element includes the firstimaging element of first type in Embodiment 1. In addition, a modifiedexample of the imaging element of Embodiment 10 illustrated in aschematic partial cross-sectional view of FIG. 46 is a front illuminatedtype imagining element. The imaging element includes the first imagingelement of first type in Embodiment 1. Here, the first imaging elementincludes three types of imaging elements including an imaging elementthat absorbs red light, an imaging element that absorbs green light, andan imaging element that absorbs blue light.

Furthermore, the plurality of imaging elements are included in thesolid-state imaging apparatus according to the first aspect of thepresent disclosure. An example of the arrangement of the plurality ofimaging elements includes a Bayer array. Color filters for separatingblue, green, and red are arranged on the light incident side of theimaging elements as necessary.

Note that instead of providing one imaging element of first type inEmbodiment 1, two imaging elements can be stacked (that is, twophotoelectric conversion units are stacked, and a control unit of twoimaging elements is provided on the semiconductor substrate), or threeimaging elements can be stacked (that is, three photoelectric conversionunits are stacked, and a control unit of three imaging elements isprovided on the semiconductor substrate). The following tableillustrates examples of the stacked structures of the imaging elementsof first type and the imaging elements of second type.

First Type Second Type Back Illuminated 1 2 Type and Green Blue + RedFront Illuminated 1 1 Type Primary Color Complementary Color 1 1 WhiteInfrared 1 0 Blue, Green, or Red 2 2 Green + Infrared Blue + Red 2 1Green + Blue Red 2 0 White + Infrared 3 2 Green + Blue + Red Blue-Green(Emerald) + Infrared 3 1 Green + Blue + Red Infrared 3 0 Blue + Green +Red

Embodiment 11

Embodiment 11 is a modification of Embodiments 1 to 10, and Embodiment11 relates to an imaging element and the like of the present disclosureincluding a transfer control electrode (charge transfer electrode). FIG.47 illustrates a schematic partial cross-sectional view of part of theimaging element and the stacked imaging element of Embodiment 11. FIGS.48 and 49 illustrate equivalent circuit diagrams of the imaging elementand the stacked imaging element of Embodiment 11. FIG. 50 illustrates aschematic layout drawing of the first electrodes, the transfer controlelectrodes, the charge storage electrodes, and the transistors of thecontrol units included in the imaging elements of Embodiment 11. FIGS.51 and 52 schematically illustrate the state of potential in eachsection during operation of the imaging element of Embodiment 11. Inaddition, FIG. 53 illustrates a schematic layout drawing of the firstelectrodes, the transfer control electrodes, and the charge storageelectrodes included in the imaging elements of Embodiment 11. FIG. 9Billustrates an equivalent circuit diagram of the imaging element and thestacked imaging element of Embodiment 11 for describing each section ofFIGS. 51 and 52 .

The imaging element and the stacked imaging element of Embodiment 11further include a transfer control electrode (charge transfer electrode)15 arranged between the first electrode 11 and the charge storageelectrode 14, arranged apart from the first electrode 11 and the chargestorage electrode 14, and arranged to face the photoelectric conversionlayer 13 through the insulating layer 82. The transfer control electrode15 is connected to the pixel drive circuit included in the drive circuitthrough a connection hole 68B and a pad portion 68A provided in theinterlayer insulating layer 81 and through the wire V_(0T).

Hereinafter, an operation of the imaging element (first imaging element)of Embodiment 11 will be described with reference to FIGS. 51 and 52 .Note that the values of the potential applied to the charge storageelectrode 14 and the potential at the point P_(D) particularly varybetween FIGS. 51 and 52 .

In the charge storage period, the drive circuit applies the potentialV₁₁ to the first electrode 11, applies the potential V₁₂ to the chargestorage electrode 14, and applies a potential V₁₄ to the transfercontrol electrode 15. The light incident on the photoelectric conversionlayer 13 causes photoelectric conversion in the photoelectric conversionlayer 13. The electron holes generated by the photoelectric conversionare sent from the second electrode 12 to the drive circuit through thewire Vou. On the other hand, the potential of the first electrode 11 ishigher than the potential of the second electrode 12. That is, forexample, a positive potential is applied to the first electrode 11, anda negative potential is applied to the second electrode 12. Therefore,the potentials are set so that V₁₂>V₁₄ (for example, V₁₂>V₁₁>V₁₄ orV₁₁>V₁₂>V₁₄) holds. As a result, the electrons generated by thephotoelectric conversion are attracted to the charge storage electrode14, and the electrons stop in the region of the photoelectric conversionlayer 13 facing the charge storage electrode 14. That is, the charge isstored in the photoelectric conversion layer 13. V₁₂ is greater thanV₁₄, and this can certainly prevent the movement of the electronsgenerated inside the photoelectric conversion layer 13 toward the firstelectrode 11. In the time course of the photoelectric conversion, thepotential in the region of the photoelectric conversion layer 13 facingthe charge storage electrode 14 becomes a more negative value.

The reset operation is performed later in the charge storage period.This resets the potential of the first floating diffusion layer FD₁, andthe potential of the first floating diffusion layer FD₁ shifts to thepotential V_(DD) of the power source.

After the completion of the reset operation, the charge is read out.That is, in the charge transfer period, the drive circuit applies thepotential V₂₁ to the first electrode 11, applies the potential V₂₂ tothe charge storage electrode 14, and applies a potential V₂₄ to thetransfer control electrode 15. Here, the potentials are set so thatV₂₂<V₂₄<V₂₁ holds. As a result, the electrons stopped in the region ofthe photoelectric conversion layer 13 facing the charge storageelectrode 14 are certainly read out to the first electrode 11 andfurther to the first floating diffusion layer FD₁. That is, the chargestored in the photoelectric conversion layer 13 is read out to thecontrol unit.

This completes the series of operations including the charge storage,the reset operation, and the charge transfer.

The operations of the amplification transistor TR1 _(amp) and theselection transistor TR1 _(sel) after the electrons are read out to thefirst floating diffusion layer FD₁ are the same as the operations ofconventional transistors. In addition, for example, the series ofoperations including the charge storage, the reset operation, and thecharge transfer of the second imaging element and the third imagingelement are similar to the conventional series of operations includingthe charge storage, the reset operation, and the charge transfer.

As in FIG. 53 illustrating a schematic layout drawing of the firstelectrodes, the charge storage electrodes, and the transistors of thecontrol units included in a modified example of the imaging elements ofEmbodiment 11, the other source/drain region 51B of the reset transistorTR1 _(rst) may be grounded, instead of connecting the other source/drainregion 51B to the power source V_(DD).

Embodiment 12

Embodiment 12 is a modification of Embodiments 1 to 11, and Embodiment12 relates to an imaging element and the like of the present disclosureincluding a plurality of charge storage electrode segments.

FIG. 54 illustrates a schematic partial cross-sectional view of part ofthe imaging element of Embodiment 12. FIGS. 55 and 56 illustrateequivalent circuit diagrams of the imaging element and the stackedimaging element of Embodiment 12. FIG. 57 illustrates a schematic layoutdrawing of the first electrodes, the charge storage electrodes, and thetransistors of the control units included in the imaging elements ofEmbodiment 12. FIGS. 58 and 59 schematically illustrate the state ofpotential in each section during operation of the imaging element ofEmbodiment 12. In addition, FIG. 9C illustrates an equivalent circuitdiagram of the imaging element and the stacked imaging element ofEmbodiment 12 for describing each section in FIG. 58 .

In Embodiment 12, the charge storage electrode 14 includes the pluralityof charge storage electrode segments 14A, 14B, and 14C. The number ofcharge storage electrode segments can be equal to or greater than 2, andthe number is “3” in embodiment 12. In addition, a different potentialis applied to each of N charge storage electrode segments in the imagingelement and the stacked imaging element of Embodiment 12. The potentialof the first electrode 11 is higher than the potential of the secondelectrode 12. That is, for example, a positive potential is applied tothe first electrode 11, and a negative potential is applied to thesecond electrode 12. Therefore, in the charge transfer period, thepotential applied to the charge storage electrode segment (firstphotoelectric conversion unit segment) 14A positioned at a place closestto the first electrode 11 is higher than the potential applied to thecharge storage electrode segment (Nth photoelectric conversion unitsegment) 14C positioned at a place farthest from the first electrode 11.In this way, a potential gradient is provided to the charge storageelectrode 14. Therefore, the electrons stopped in the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14are more certainly read out to the first electrode 11 and further to thefirst floating diffusion layer FD₁. That is, the charge stored in thephotoelectric conversion layer 13 is read out to the control unit.

In the example illustrated in FIG. 58 , the potential of the chargestorage electrode segment 14C<the potential of the charge storageelectrode segment 14B<the potential of the charge storage electrodesegment 14A holds in the charge transfer period. In this way, theelectrons stopped in the region of the photoelectric conversion layer 13are read out to the first floating diffusion layer FD₁ all at once. Onthe other hand, in the example illustrated in FIG. 59 , the potential ofthe charge storage electrode segment 14C, the potential of the chargestorage electrode segment 14B, and the potential of the charge storageelectrode segment 14A are gradually changed (that is, changed step-wiseor in a slope shape) in the charge transfer period. In this way, theelectrons stopped in the region of the photoelectric conversion layer 13facing the charge storage electrode segment 14C are moved to the regionof the photoelectric conversion layer 13 facing the charge storageelectrode segment 14B. Next, the electrons stopped in the region of thephotoelectric conversion layer 13 facing the charge storage electrodesegment 14B are moved to the region of the photoelectric conversionlayer 13 facing the charge storage electrode segment 14A. Next, theelectros stopped in the region of the photoelectric conversion layer 13facing the charge storage electrode segment 14A are certainly read outto the first floating diffusion layer FD₁.

As in FIG. 60 illustrating a schematic layout drawing of the firstelectrodes, the charge storage electrodes, and the transistors of thecontrol units included in the modified example of the imaging elementsof Embodiment 12, the other source/drain region 51B of the resettransistor TR1 _(rst) may be grounded, instead of connecting the othersource/drain region 51B to the power source V_(DD).

Embodiment 13

Embodiment 13 is a modification of Embodiments 1 to 12, and relates tothe imaging elements of the first configuration and the sixthconfiguration.

FIG. 61 illustrates a schematic partial cross-sectional view of theimaging element and the stacked imaging element of Embodiment 13. FIG.62 illustrates an enlarged schematic partial cross-sectional view of thepart where the charge storage electrode, the photoelectric conversionlayer, and the second electrode are stacked. The equivalent circuitdiagram of the imaging element and the stacked imaging element ofEmbodiment 13 is similar to the equivalent circuit diagram of theimaging element of Embodiment 1 described in FIGS. 3 and 4 . Theschematic layout drawing of the first electrodes, the charge storageelectrodes, and the transistors of the control units included in theimaging elements of Embodiment 13 is similar to the imaging element ofEmbodiment 1 described in FIG. 5 . Furthermore, the operation of theimaging element (first imaging element) of Embodiment 13 issubstantially similar to the operation of the imaging element ofEmbodiment 1.

Here, in the imaging element of Embodiment 13 or imaging elements ofEmbodiments 14 to 18 described later,

-   -   the photoelectric conversion unit includes N (where N≥2)        photoelectric conversion unit segments (specifically, three        photoelectric conversion unit segments 10 ₁, 10 ₂, and 10 ₃),    -   the photoelectric conversion layer 13 includes N photoelectric        conversion layer segments (specifically, three photoelectric        conversion layer segments 13 ₁, 13 ₂, and 13 ₃), and    -   the insulating layer 82 includes N insulating layer segments        (specifically, three insulating layer segments 82 ₁, 82 ₂, and        82 ₃).

In Embodiments 13 to 15, the charge storage electrode 14 includes Ncharge storage electrode segments (specifically, three charge storageelectrode segments 14 ₁, 14 ₂, and 14 ₃ in each Embodiment).

In Embodiments 16 and 17 and in Embodiment 15 depending on the case, thecharge storage electrode 14 includes N charge storage electrode segments(specifically, three charge storage electrode segments 14 ₁, 14 ₂, and14 ₃) arranged apart from each other,

-   -   an nth (where, n=1, 2, 3 . . . N) photoelectric conversion unit        segment 10 n includes an nth charge storage electrode segment 14        _(n), an nth insulating layer segment 82 _(n), and an nth        photoelectric conversion layer segment 13 _(n), and    -   the larger the value of n of the photoelectric conversion unit        segment, the farther the position of the photoelectric        conversion unit segment from the first electrode 11.

Alternatively, the imaging element of Embodiment 13 or the imagingelements of Embodiments 14 and 17 described later include

-   -   a photoelectric conversion unit including the first electrode        11, the photoelectric conversion layer 13, and the second        electrode 12 that are stacked, in which    -   the photoelectric conversion unit further includes the charge        storage electrode 14 arranged apart from the first electrode 11        and arranged to face the photoelectric conversion layer 13        through the insulating layer 82, and    -   the cross-sectional area of the stacked part of the charge        storage electrode 14, the insulating layer 82, and the        photoelectric conversion layer 13 when the stacked part is cut        in a YZ virtual plane changes in accordance with the distance        from the first electrode, where a Z direction is the stacking        direction of the charge storage electrode 14, the insulating        layer 82, and the photelectric conversion layer 13, and an X        direction is a direction away from the first electrode 11.

Furthermore, in the imaging element of Embodiment 13, the thicknesses ofthe insulating layer segments gradually change from the firstphotoelectric conversion unit segment 10 ₁ to an Nth photoelectricconversion unit segment 10 _(N). Specifically, the thicknesses of theinsulating layer segments gradually increase. Alternatively, in theimaging element of Embodiment 13, the width of the cross section of thestacked part is constant, and the thickness of the cross section of thestacked part, specifically, the thickness of the insulating layersegment, gradually increases in accordance with the distance from thefirst electrode 11. Note that the thicknesses of the insulating layersegments increase step-wise. The thickness of the insulating layersegment 82 _(n) in the nth photoelectric conversion unit segment 10 _(n)is constant. Assuming that the thickness of the nth insulating layersegment 82 _(n) in the nth photoelectric conversion unit segment 10 _(n)is “1,” the thickness of an insulating layer segment 82 _((n+1)) in an(n+1)th photoelectric conversion unit segment 10 _((n+1)) can be 2 to10. However, the values are not limited to these. In Embodiment 13, thethicknesses of the charge storage electrode segments 14 ₁, 14 ₂, and 14₃ are gradually reduced to gradually increase the thicknesses of theinsulating layer segments 82 ₁, 82 ₂, and 82 ₃. The thicknesses of thephotoelectric conversion layer segments 13 ₁, 13 ₂, and 13 ₃ areconstant.

Hereinafter, an operation of the imaging element of Embodiment 13 willbe described.

In the charge storage period, the drive circuit applies the potentialV₁₁ to the first electrode 11 and applies the potential V₁₂ to thecharge storage electrode 14. The light incident on the photoelectricconversion layer 13 causes photoelectric conversion in the photoelectricconversion layer 13. The electron holes generated by the photoelectricconversion are sent from the second electrode 12 to the drive circuitthrough the wire Vou. On the other hand, the potential of the firstelectrode 11 is higher than the potential of the second electrode 12.That is, for example, a positive potential is applied to the firstelectrode 11, and a negative potential is applied to the secondelectrode 12. Therefore, the potentials are set so that V₁₂>V₁₁,preferably, V₁₂>V₁₁, holds. As a result, the electrons generated by thephotoelectric conversion are attracted to the charge storage electrode14, and the electrons stop in the region of the photoelectric conversionlayer 13 facing the charge storage electrode 14. That is, the charge isstored in the photoelectric conversion layer 13. V₁₂ is greater thanV₁₁, and therefore, the electrons generated inside the photoelectricconversion layer 13 do not move toward the first electrode 11. In thetime course of the photoelectric conversion, the potential in the regionof the photoelectric conversion layer 13 facing the charge storageelectrode 14 becomes a more negative value.

In the configuration adopted in the imaging element of Embodiment 13,the thicknesses of the insulating layer segments gradually increase.Therefore, when the state shifts to V₁₂≥V₁₁ in the charge storageperiod, the nth photoelectric conversion unit segment 10 _(n) can storemore charge than the (n+1)th photoelectric conversion unit segment 10_((n+1)). A strong electric field is applied, and the flow of chargefrom the first photoelectric conversion unit segment 10 ₁ to the firstelectrode 11 can be certainly prevented.

The reset operation is performed later in the charge storage period.This resets the potential of the first floating diffusion layer FD₁, andthe potential of the first floating diffusion layer FD₁ shifts to thepotential V_(DD) of the power source.

After the completion of the reset operation, the charge is read out.That is, in the charge transfer period, the drive circuit applies thepotential V₂₁ to the first electrode 11 and applies the potential V₂₂ tothe charge storage electrode 14. Here, the potentials are set so thatV₂₁>V₂₂ holds. As a result, the electrons stopped in the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14are read out to the first electrode 11 and further to the first floatingdiffusion layer FD₁. That is, the charge stored in the photoelectricconversion layer 13 is read out to the control unit.

More specifically, when the state shifts to V₂₁>V₂₂ in the chargetransfer period, the flow of charge from the first photoelectricconversion unit segment 10 ₁ to the first electrode 11 and the flow ofcharge from the (n+1)th photoelectric conversion unit segment 10_((n+1)) to the nth photoelectric conversion unit segment 10 _(n) can becertainly secured.

This completes the series of operations including the charge storage,the reset operation, and the charge transfer.

In the imaging element of Embodiment 13, the thicknesses of theinsulating layer segments gradually change from the first photoelectricconversion unit segment to the Nth photoelectric conversion unitsegment. Alternatively, the cross-sectional area of the stacked part ofthe charge storage electrode, the insulating layer, and thephotoelectric conversion layer when the stacked part is cut in the YZvirtual plane changes in accordance with the distance from the firstelectrode. Therefore, a kind of charge transfer gradient is formed, andthe charge generated by the photoelectric conversion can be more easilyand certainly transferred.

The imaging element and the stacked imaging element of Embodiment 13 canbe produced by a method substantially similar to the imaging element ofEmbodiment 1, and the details will not be described.

Note that in forming the first electrode 11, the charge storageelectrode 14, and the insulating layer 82 in the imaging element ofEmbodiment 13, a conductive material layer for forming the chargestorage electrode 14 ₃ is deposited on the interlayer insulating layer81 first. The conductive material layer is patterned, and the conductivematerial layer is left in the region where the photoelectric conversionunit segments 10 ₁, 10 ₂, and 10 ₃ and the first electrode 11 are to beformed. In this way, part of the first electrode 11 and the chargestorage electrode 14 ₃ can be obtained. Next, an insulating layer forforming the insulating layer segment 82 ₃ is deposited on the entiresurface. The insulating layer is patterned, and a planarization processis executed. In this way, the insulating layer segment 82 ₃ can beobtained. Next, a conductive material layer for forming the chargestorage electrode 14 ₂ is deposited on the entire surface, and theconductive material layer is patterned. The conductive material layer isleft in the region where the photoelectric conversion unit segments 10 ₁and 10 ₂ and the first electrode 11 are to be formed. In this way, partof the first electrode 11 and the charge storage electrode 14 ₂ can beobtained. Next, an insulating layer for forming the insulating layersegment 82 ₂ is deposited on the entire surface. The insulating layer ispatterned, and a planarization process is executed. In this way, theinsulating layer segment 82 ₂ can be obtained. Next, a conductivematerial layer for forming the charge storage electrode 14 ₁ isdeposited on the entire surface. The conductive material layer ispatterned, and the conductive material layer is left in the region wherethe photoelectric conversion unit segment 10 ₁ and the first electrode11 are to be formed. In this way, the first electrode 11 and the chargestorage electrode 14 ₁ can be obtained. Next, an insulating layer isdeposited on the entire surface, and a planarization process isexecuted. In this way, the insulating layer segment 82 ₁ (insulatinglayer 82) can be obtained. Furthermore, the photoelectric conversionlayer 13 is formed on the insulating layer 82. In this way, thephotoelectric conversion unit segments 10 ₁, 10 ₂, and 10 ₃ can beobtained.

As in FIG. 63 illustrating a schematic layout drawing of the firstelectrodes, the charge storage electrodes, and the transistors of thecontrol units included in the modified example of the imaging elementsof Embodiment 13, the other source/drain region 51B of the resettransistor TR1 _(rst) may be grounded, instead of connecting the othersource/drain region 51B to the power source V_(DD).

Embodiment 14

An imaging element of Embodiment 14 relates to the imaging elements ofthe second configuration and the sixth configuration of the presentdisclosure. As in FIG. 64 illustrating an enlarged schematic partialcross-sectional view of the part where the charge storage electrode, thephotoelectric conversion layer, and the second electrode are stacked,the thicknesses of the photoelectric conversion layer segments graduallychange from the first photoelectric conversion unit segment 10 ₁ to theNth photoelectric conversion unit segment 10 _(N) in the imaging elementof Embodiment 14. Alternatively, in the imaging element of Embodiment14, the widths of the cross sections of the stacked parts are constant,and the thicknesses of the cross sections of the stacked parts,specifically, the thicknesses of the photoelectric conversion layersegments, gradually increase in accordance with the distance from thefirst electrode 11. More specifically, the thicknesses of thephotoelectric conversion layer segments gradually increase. Note thatthe thicknesses of the photoelectric conversion layer segments increasestep-wise. The thickness of the photoelectric conversion layer segment13 _(n) in the nth photoelectric conversion unit segment 10 _(n) isconstant. Assuming that the thickness of the photoelectric conversionlayer segment 13 _(n) in the nth photoelectric conversion unit segment10 _(n) is “1,” the thickness of a photoelectric conversion layersegment 13 _((n+1)) in the (n+1)th photoelectric conversion unit segment10 _((n+1)) can be 2 to 10. However, the values are not limited tothese. In Embodiment 14, the thicknesses of the charge storage electrodesegments 14 ₁, 14 ₂, and 14 ₃ are gradually reduced to graduallyincrease the thicknesses of the photoelectric conversion layer segments13 ₁, 13 ₂, and 13 ₃. The thicknesses of the insulating layer segments82 ₁, 82 ₂, and 82 ₃ are constant.

In the imaging element of Embodiment 14, the thicknesses of thephotoelectric conversion layer segments gradually increase. Therefore,when the state shifts to V₁₂>V₁₁ in the charge storage period, astronger electric field is applied to the nth photoelectric conversionunit segment 10 _(n) than to the (n+1)th photoelectric conversion unitsegment 10 _((n+1)). This can certainly prevent the flow of charge fromthe first photoelectric conversion unit segment 10 ₁ to the firstelectrode 11. Furthermore, when the state shifts to V₂₂<V₂₁ in thecharge transfer period, the flow of charge from the first photoelectricconversion unit segment 10 ₁ to the first electrode 11 and the flow ofcharge from the (n+1)th photoelectric conversion unit segment 10_((n+1)) to the nth photoelectric conversion unit segment 10 _(n) can becertainly secured.

In this way, in the imaging element of Embodiment 14, the thicknesses ofthe photoelectric conversion layer segments gradually change from thefirst photoelectric conversion unit segment to the Nth photoelectricconversion unit segment. Alternatively, the cross-sectional area of thestacked part of the charge storage electrode, the insulating layer, andthe photoelectric conversion layer when the stacked part is cut in theYZ virtual plane changes in accordance with the distance from the firstelectrode. Therefore, a kind of charge transfer gradient is formed, andthe charge generated by the photoelectric conversion can be more easilyand certainly transferred.

In forming the first electrode 11, the charge storage electrode 14, theinsulating layer 82, and the photoelectric conversion layer 13 in theimaging element of Embodiment 14, a conductive material layer forforming the charge storage electrode 14 ₃ is deposited on the interlayerinsulating layer 81 first. The conductive material layer is patterned,and the conductive material layer is left in the region where thephotoelectric conversion unit segments 10 ₁, 10 ₂, and 10 ₃ and thefirst electrode 11 are to be formed. In this way, part of the firstelectrode 11 and the charge storage electrode 14 ₃ can be obtained.Next, a conductive material layer for forming the charge storageelectrode 14 ₂ is deposited on the entire surface, and the conductivematerial layer is patterned. The conductive material layer is left inthe region where the photoelectric conversion unit segments 10 ₁ and 10₂ and the first electrode 11 are to be formed. In this way, part of thefirst electrode 11 and the charge storage electrode 14 ₂ can beobtained. Next, a conductive material layer for forming the chargestorage electrode 14 ₁ is deposited on the entire surface, and theconductive material layer is patterned. The conductive material layer isleft in the region where the photoelectric conversion unit segment 10 ₁and the first electrode 11 are to be formed. In this way, the firstelectrode 11 and the charge storage electrode 14 ₁ can be obtained.Next, the insulating layer 82 is conformally deposited on the entiresurface. Furthermore, the photoelectric conversion layer 13 is formed onthe insulating layer 82, and a planarization process is applied to thephotoelectric conversion layer 13. In this way, the photoelectricconversion unit segments 10 ₁, 10 ₂, and 10 ₃ can be obtained.

Embodiment 15

Embodiment 15 relates to the imaging element of the third configuration.FIG. 65 illustrates a schematic partial cross-sectional view of theimaging element and the stacked imaging element of Embodiment 15. In theimaging element of Embodiment 15, the materials included in theinsulating layer segments vary between adjacent photoelectric conversionunit segments in the imaging element of Embodiment 15. Here, the valuesof dielectric constant of the materials included in the insulating layersegments gradually decrease from the first photoelectric conversion unitsegment 10 ₁ to the Nth photoelectric conversion unit segment 10 _(N).In the imaging element of Embodiment 15, the same potential may beapplied to all of the N charge storage electrode segments, or adifferent potential may be applied to each of the N charge storageelectrode segments. In the latter case, the charge storage electrodesegments 14 ₁, 14 ₂, and 14 ₃ arranged apart from each other can beconnected to the vertical drive circuit 112 included in the drivecircuit through pad portions 64 ₁, 64 ₂, and 64 ₃ as described inEmbodiment 16.

In addition, by adopting the configuration, a kind of charge transfergradient is formed. When the state shifts to V₁₂≥V₁₁ in the chargestorage period, the nth photoelectric conversion unit segment can storemore charge than the (n+1)th photoelectric conversion unit segment.Furthermore, when the state shifts to V₂₂<V₂₁ in the charge transferperiod, the flow of charge from the first photoelectric conversion unitsegment to the first electrode and the flow of charge from the (n+1)thphotoelectric conversion unit segment to the nth photoelectricconversion unit segment can be certainly secured.

Embodiment 16

Embodiment 16 relates to the imaging element of the fourthconfiguration. FIG. 66 illustrates a schematic partial cross-sectionalview of the imaging element and the stacked imaging element ofEmbodiment 16. In the imaging element of Embodiment 16, the materialsincluded in the charge storage electrode segments vary between adjacentphotoelectric conversion unit segments. Here, the values of workfunction of the materials included in the insulating layer segmentsgradually increase from the first photoelectric conversion unit segment10 ₁ to the Nth photoelectric conversion unit segment 10 _(N). In theimaging element of Embodiment 16, the same potential may be applied toall of the N charge storage electrode segments, or a different potentialmay be applied to each of the N charge storage electrode segments. Inthe latter case, the charge storage electrode segments 14 ₁, 14 ₂, and14 ₃ are connected to the vertical drive circuit 112 included in thedrive circuit through the pad portions 64 ₁, 64 ₂, and 64 ₃.

Embodiment 17

An imaging element of Embodiment 17 relates to the imaging element ofthe fifth configuration. FIGS. 67A, 67B, 68A, and 68B illustrateschematic plan views of the charge storage electrode segments inEmbodiment 17. FIG. 69 illustrates a schematic layout drawing of thefirst electrodes, the charge storage electrodes, and the transistors ofthe control units included in the imaging elements of Embodiment 17. Theschematic partial cross-sectional view of the imaging element and thestacked imaging element of Embodiment 17 is similar to the schematicpartial cross-sectional view illustrated in FIG. 66 or 71 . In theimaging element of Embodiment 17, the areas of the charge storageelectrode segments gradually decrease from the first photoelectricconversion unit segment 10 ₁ to the Nth photoelectric conversion unitsegment 10 _(N). In the imaging element of Embodiment 17, the samepotential may be applied to all of the N charge storage electrodesegments, or a different potential may be applied to each of the Ncharge storage electrode segments. Specifically, as described inEmbodiment 16, the charge storage electrode segments 14 ₁, 14 ₂, and 14₃ arranged apart from each other can be connected to the vertical drivecircuit 112 included in the drive circuit through the pad portions 64 ₁,64 ₂, and 64 ₃.

In Embodiment 17, the charge storage electrode 14 includes the pluralityof charge storage electrode segments 14 ₁, 14 ₂, and 14 ₃. The number ofcharge storage electrode segments can be equal to or greater than 2, andthe number is “3” in embodiment 17. In addition, the potential of thefirst electrode 11 is higher than the potential of the second electrode12 in the imaging element and the stacked imaging element of Embodiment17. That is, for example, a positive potential is applied to the firstelectrode 11, and a negative potential is applied to the secondelectrode 12. Therefore, in the charge transfer period, the potentialapplied to the charge storage electrode segment 14 ₁ positioned at aplace closest to the first electrode 11 is higher than the potentialapplied to the charge storage electrode segment 14 ₃ positioned at aplace farthest from the first electrode 11. In this way, a potentialgradient is provided to the charge storage electrode 14. Therefore, theelectrons stopped in the region of the photoelectric conversion layer 13facing the charge storage electrode 14 are more certainly read out tothe first electrode 11 and further to the first floating diffusion layerFD₁. That is, the charge stored in the photoelectric conversion layer 13is read out to the control unit.

Furthermore, in the charge transfer period, the potential of the chargestorage electrode segment 14 ₃<the potential of the charge storageelectrode segment 14 ₂<the potential of the charge storage electrodesegment 14 ₁ holds. In this way, the electrons stopped in the region ofthe photoelectric conversion layer 13 can be read out to the firstfloating diffusion layer FD₁ all at once. Alternatively, in the chargetransfer period, the potential of the charge storage electrode segment14 ₃, the potential of the charge storage electrode segment 14 ₂, andthe potential of the charge storage electrode segment 14 ₁ are graduallychanged (that is, changed step-wise or in a slope shape). In this way,the electrons stopped in the region of the photoelectric conversionlayer 13 facing the charge storage electrode segment 14 ₃ are moved tothe region of the photoelectric conversion layer 13 facing the chargestorage electrode segment 14 ₂. Next, the electrons stopped in theregion of the photoelectric conversion layer 13 facing the chargestorage electrode segment 14 ₂ are moved to the region of thephotoelectric conversion layer 13 facing the charge storage electrodesegment 14 ₁. Next, the electros stopped in the region of thephotoelectric conversion layer 13 facing the charge storage electrodesegment 14 ₁ can be certainly read out to the first floating diffusionlayer FD₁.

As in FIG. 70 illustrating a schematic layout drawing of the firstelectrodes, the charge storage electrodes, and the transistors of thecontrol units included in a modified example of the imaging elements ofEmbodiment 17, the other source/drain region 51B of the reset transistorTR3 _(rst) may be grounded, instead of connecting the other source/drainregion 51B to the power source V_(DD).

In the imaging element of Embodiment 17, a kind of charge transfergradient is also formed by adopting the configuration. That is, theareas of the charge storage electrode segments gradually decrease fromthe first photoelectric conversion unit segment 10 ₁ to the Nthphotoelectric conversion unit segment 10 _(N). Therefore, when the stateshifts to V₁₂≥V₁₁ in the charge storage period, the nth photoelectricconversion unit segment can store more charge than the (n+1)thphotoelectric conversion unit segment. Furthermore, when the stateshifts to V₂₂<V₂₁ in the charge transfer period, the flow of charge fromthe first photoelectric conversion unit segment to the first electrodeand the flow of charge from the (n+1)th photoelectric conversion unitsegment to the nth photoelectric conversion unit segment can becertainly secured.

Embodiment 18

Embodiment 18 relates to the imaging element of the sixth configuration.FIG. 71 illustrates a schematic partial cross-sectional view of theimaging element and the stacked imaging element of Embodiment 18. Inaddition, FIGS. 72A and 72B illustrate schematic plan views of thecharge storage electrode segments in Embodiment 18. The imaging elementof Embodiment 18 includes the photoelectric conversion unit includingthe first electrode 11, the photoelectric conversion layer 13, and thesecond electrode 12 that are stacked. The photoelectric conversion unitfurther includes the charge storage electrode 14 arranged apart from thefirst electrode 11 and arranged to face the photoelectric conversionlayer 13 through the insulating layer 82. In addition, thecross-sectional area of the stacked part of the charge storage electrode14, the insulating layer 82, and the photoelectric conversion layer 13when the stacked part is cut in the YZ virtual plane changes inaccordance with the distance from the first electrode 11, where the Zdirection is the stacking direction of the charge storage electrode 14,the insulating layer 82, and the photoelectric conversion layer 13, andthe X direction is the direction away from the first electrode 11.

Specifically, in the imaging element of Embodiment 18, the thickness ofthe cross section of the stacked part is constant, and the width of thecross section of the stacked part decreases with an increase in thedistance from the first electrode 11. Note that the width maycontinuously decrease (see FIG. 72A) or may decrease step-wise (see FIG.72B).

In this way, in the imaging element of Embodiment 17, thecross-sectional area of the stacked part of the charge storage electrode14, the insulating layer 82, and the photoelectric conversion layer 13when the stacked part is cut in the YZ virtual plane changes inaccordance with the distance from the first electrode. Therefore, a kindof charge transfer gradient is formed, and the charge generated by thephotoelectric conversion can be more easily and certainly transferred.

Embodiment 19

Embodiment 19 relates to the solid-state imaging apparatuses of thefirst configuration and the second configuration.

The solid-state imaging apparatus of Embodiment 19 includes

-   -   a photoelectric conversion unit including the first electrode        11, the photoelectric conversion layer 13, and the second        electrode 12 that are stacked, in which    -   the photoelectric conversion unit further includes a plurality        of imaging elements each including the charge storage electrode        14 arranged apart from the first electrode 11 and arranged to        face the photoelectric conversion layer 13 through the        insulating layer 82,    -   a plurality of imaging elements are included in an imaging        element block, and    -   the first electrode 11 is shared by the plurality of imaging        elements included in the imaging element block.

Alternatively, the solid-state imaging apparatus of Embodiment 19includes a plurality of imaging elements described in Embodiments 1 to18.

In Embodiment 19, one floating diffusion layer is provided for theplurality of imaging elements. In addition, the timing of the chargetransfer period can be appropriately controlled to allow the pluralityof imaging elements to share one floating diffusion layer. Furthermore,in this case, the plurality of imaging elements can share one contacthole portion.

Note that the solid-state imaging apparatus of Embodiment 19 has aconfiguration and a structure substantially similar to the solid-stateimaging apparatuses described in Embodiments 1 to 18, except that theplurality of imaging elements included in the imaging element blockshare the first electrode 11.

FIG. 73 (Embodiment 19), FIG. 74 (first modified example of Embodiment19), FIG. 75 (second modified example of Embodiment 19), FIG. 76 (thirdmodified example of Embodiment 19), and FIG. 77 (fourth modified exampleof Embodiment 19) schematically illustrate arrangement states of thefirst electrodes 11 and the charge storage electrodes 14 in thesolid-state imaging apparatus of Embodiment 19. FIGS. 73, 74, 77, and 78illustrate sixteen imaging elements, and FIGS. 75 and 76 illustratetwelve imaging elements. In addition, two imaging elements are includedin the imaging element block. The imaging element blocks are surroundedand illustrated by dotted lines. Subscripts attached to the firstelectrodes 11 and the charge storage electrodes 14 are for thedistinction of the first electrodes 11 and the charge storage electrodes14. This similarly applies to the following description. Furthermore,one on-chip micro lens (not illustrated in FIGS. 73 to 82 ) is arrangedon the upper side of one imaging element. Furthermore, in one imagingelement block, two charge storage electrodes 14 are arranged across thefirst electrode 11 (see FIGS. 73 and 74 ). Alternatively, one firstelectrode 11 is arranged to face two charge storage electrodes 14arranged side by side (see FIGS. 77 and 78 ). That is, the firstelectrode is arranged adjacent to the charge storage electrode of eachimaging element. Alternatively, the first electrodes are arrangedadjacent to the charge storage electrodes of part of the plurality ofimaging elements and are not arranged adjacent to the charge storageelectrodes of the rest of the plurality of imaging elements (see FIGS.75 and 76 ). In this case, the movement of charge from the rest of theplurality of imaging elements to the first electrodes is movementthrough the part of the plurality of imaging elements. It is preferablethat a distance A between the charge storage electrode included in theimaging element and the charge storage electrode included in the imagingelement be longer than a distance B between the first electrode and thecharge storage electrode in the imaging element adjacent to the firstelectrode in order to certainly move the charge from each imagingelement to the first electrode. In addition, it is preferable that thefarther the position of the imaging element from the first electrode,the larger the value of the distance A. Furthermore, in the examplesillustrated in FIGS. 74, 76, and 78 , the charge movement controlelectrodes 21 are arranged between the plurality of imaging elementsincluded in the imaging element blocks. Arranging the charge movementcontrol electrodes 21 can certainly suppress the movement of charge inthe imaging element blocks positioned across the charge movement controlelectrodes 21. Note that the potentials can be set so that V₁₂>V₁₃ (forexample, V₁₂₋₂>V₁₃) holds, where V₁₃ is the potential applied to thecharge movement control electrodes 21.

The charge movement control electrode 21 may be formed in the same levelas the first electrode 11 or the charge storage electrode 14 or may beformed in a different level (specifically, level on the lower side ofthe first electrode 11 or the charge storage electrode 14) on the firstelectrode side. In the former case, the distance between the chargemovement control electrode 21 and the photoelectric conversion layer canbe reduced, and the potential can be easily controlled. On the otherhand, in the latter case, the distance between the charge movementcontrol electrode 21 and the charge storage electrode 14 can be reduced,and this is advantageous for miniaturization.

Hereinafter, an operation of the imaging element block including thefirst electrode 11 ₂ and two charge storage electrodes 14 ₂₁ and 14 ₂₂will be described.

In the charge storage period, the drive circuit applies a potentialV_(a) to the first electrode 11 ₂ and applies a potential V_(A) to thecharge storage electrodes 14 ₂₁ and 14 ₂₂. The light incident on thephotoelectric conversion layer 13 causes photoelectric conversion in thephotoelectric conversion layer 13. The electron holes generated by thephotoelectric conversion are sent from the second electrode 22 to thedrive circuit through the wire V_(0U). On the other hand, the potentialof the first electrode 11 ₂ is higher than the potential of the secondelectrode 12. That is, for example, a positive potential is applied tothe first electrode 11 ₂, and a negative potential is applied to thesecond electrode 12. Therefore, the potentials are set so thatV_(A)≥V_(a), preferably, V_(A)>V_(a), holds. As a result, the electronsgenerated by the photoelectric conversion are attracted to the chargestorage electrodes 14 ₂₁ and 14 ₂₂, and the electrons stop in the regionof the photoelectric conversion layer 13 facing the charge storageelectrodes 14 ₂₁ and 14 ₂₂. That is, the charge is stored in thephotoelectric conversion layer 13. V_(A) is equal to or greater thanV_(a), and therefore, the electrons generated inside the photoelectricconversion layer 13 do not move toward the first electrode 11 ₂. In thetime course of the photoelectric conversion, the potential in the regionof the photoelectric conversion layer 13 facing the charge storageelectrodes 14 ₂₁ and 14 ₂₂ becomes a more negative value.

The reset operation is performed later in the charge storage period.This resets the potential of the first floating diffusion layer, and thepotential of the first floating diffusion layer shifts to the potentialV_(DD) of the power source.

After the completion of the reset operation, the charge is read out.That is, in the charge transfer period, the drive circuit applies apotential V_(b) to the first electrode 11 ₂, applies a potentialV_(21-B) to the charge storage electrode 14 ₂₁, and applies a potentialV_(22-B) to the charge storage electrode 14 ₂₂. Here, the potentials areset so that V_(21-B)<V_(b)<V_(22-B) holds. As a result, the electronsstopped in the region of the photoelectric conversion layer 13 facingthe charge storage electrode 14 ₂₁ are read out to the first electrode11 ₂ and further to the first floating diffusion layer. That is, thecharge stored in the region of the photoelectric conversion layer 13facing the charge storage electrode 14 ₂₁ is read out to the controlunit. Once the reading is completed, the potentials are set so thatV_(22-B)≤V_(21-B)<V_(b) holds. Note that in the examples illustrated inFIGS. 77 and 78 , the potentials may be set so thatV_(22-B)<V_(b)<V_(21-B) holds. As a result, the electrons stopped in theregion of the photoelectric conversion layer 13 facing the chargestorage electrode 14 ₂₂ are read out to the first electrode 11 ₂ andfurther to the first floating diffusion layer. Furthermore, in theexamples illustrated in FIGS. 75 and 76 , the electrons stopped in theregion of the photoelectric conversion layer 13 facing the chargestorage electrode 14 ₂₂ may be read out to the first floating diffusionlayer through the first electrode 11 ₃ adjacent to the charge storageelectrode 14 ₂₂. In this way, the charge stored in the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14₂₂ is read out to the control unit. Note that when the readout of thecharge stored in the region of the photoelectric conversion layer 13facing the charge storage electrode 14 ₂₁ to the control unit iscompleted, the potential of the first floating diffusion layer may bereset.

FIG. 83A illustrates an example of reading and driving in the imagingelement block of Embodiment 19.

[Step-A]

Input of auto zero signal into comparator

[Step-B]

Reset operation of one shared floating diffusion layer

[Step-C]

Reading of P phase in imaging element corresponding to charge storageelectrode 14 ₂₁ and movement of charge to first electrode 11 ₂

[Step-D]

Reading of D phase in imaging element corresponding to charge storageelectrode 14 ₂₁ and movement of charge to first electrode 11 ₂

[Step-E]

Reset operation of one shared floating diffusion layer

[Step-F]

Input of auto zero signal into comparator

[Step-G]

Reading of P phase in imaging element corresponding to charge storageelectrode 14 ₂₂ and movement of charge to first electrode 11 ₂

[Step-H]

Reading of D phase in imaging element corresponding to charge storageelectrode 14 ₂₂ and movement of charge to first electrode 11 ₂

The signals from two imaging elements corresponding to the chargestorage electrode 14 ₂₁ and the charge storage electrode 14 ₂₂ are readin this flow. Based on the correlated double sampling (CDS) process, thedifference between the reading of the P phase in [step-C] and thereading of the D phase in [step-D] is the signal from the imagingelement corresponding to the charge storage electrode 14 ₂₁. Thedifference between the reading of the P phase in [step-G] and thereading of the D phase in [step-H] is the signal from the imagingelement corresponding to the charge storage electrode 14 ₂₂.

Note that the operation of [step-E] may be skipped (see FIG. 83B). Inaddition, the operation of [step-F] may be skipped, and in this case,[step-G] can be further skipped (see FIG. 83C). The difference betweenthe reading of the P phase in [step-C] and the reading of the D phase in[step-D] is the signal from the imaging element corresponding to thecharge storage electrode 14 ₂₁. The difference between the reading ofthe D phase in [step-D] and the reading of the D phase in [step-H] isthe signal from the imaging element corresponding to the charge storageelectrode 14 ₂₂.

In modified examples of FIG. 79 (sixth modified example of Embodiment19) and FIG. 80 (seventh modified example of Embodiment 19)schematically illustrating arrangement states of the first electrodes 11and the charge storage electrodes 14, four imaging elements are includedin the imaging element block. The operations of the solid-state imagingapparatuses can be substantially similar to the operations of thesolid-state imaging apparatuses illustrated in FIGS. 73 to 78 .

In an eighth modified example and a ninth modified example of FIGS. 81and 82 schematically illustrating arrangement states of the firstelectrodes 11 and the charge storage electrodes 14, sixteen imagingelements are included in the imaging element block. As illustrated inFIGS. 81 and 82 , charge movement control electrodes 21A₁, 21A₂, and21A₃ are arranged between the charge storage electrode 14 ₁₁ and thecharge storage electrode 14 ₁₂, between the charge storage electrode 14₁₂ and the charge storage electrode 14 ₁₃, and between the chargestorage electrode 14 ₁₃ and the charge storage electrode 14 ₁₄. Inaddition, as illustrated in FIG. 82 , charge movement control electrodes21B₁, 21B₂, and 21B₃ are arranged between the charge storage electrodes14 ₂₁, 14 ₃₁, and 14 ₄₁ and the charge storage electrodes 14 ₂₂, 14 ₃₂,and 14 ₄₂, between the charge storage electrodes 14 ₂₂, 14 ₃₂, and 14 ₄₂and the charge storage electrodes 14 ₂₃, 14 ₃₃, and 14 ₄₃, and betweenthe charge storage electrodes 14 ₂₃, 14 ₃₃, and 14 ₄₃ and the chargestorage electrodes 14 ₂₄, 14 ₃₄, and 14 ₄₄. Furthermore, a chargemovement control electrode 21C is arranged between the imaging elementblock and the imaging element block. Furthermore, in each of thesolid-state imaging apparatuses, the sixteen charge storage electrodes14 can be controlled to read the charge stored in the photoelectricconversion layer 13 from the first electrode 11.

[Step-10]

Specifically, the charge stored in the region of the photoelectricconversion layer 13 facing the charge storage electrode 14 ₁₁ is readfrom the first electrode 11 first. Next, the charge stored in the regionof the photoelectric conversion layer 13 facing the charge storageelectrode 14 ₁₂ is read from the first electrode 11 through the regionof the photoelectric conversion layer 13 facing the charge storageelectrode 14 ₁₁. Next, the charge stored in the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14₁₃ is read from the first electrode 11 through the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14₁₂ and the charge storage electrode 14 ₁₁.

[Step-20]

Subsequently, the charge stored in the region of the photoelectricconversion layer 13 facing the charge storage electrode 14 ₂₁ is movedto the region of the photoelectric conversion layer 13 facing the chargestorage electrode 14 ₁₁. The charge stored in the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14₂₂ is moved to the region of the photoelectric conversion layer 13facing the charge storage electrode 14 ₁₂. The charge stored in theregion of the photoelectric conversion layer 13 facing the chargestorage electrode 14 ₂₃ is moved to the region of the photoelectricconversion layer 13 facing the charge storage electrode 14 ₁₃. Thecharge stored in the region of the photoelectric conversion layer 13facing the charge storage electrode 14 ₂₄ is moved to the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14₁₄.

[Step-21]

The charge stored in the region of the photoelectric conversion layer 13facing the charge storage electrode 14 ₃₁ is moved to the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14₂₁. The charge stored in the region of the photoelectric conversionlayer 13 facing the charge storage electrode 14 ₃₂ is moved to theregion of the photoelectric conversion layer 13 facing the chargestorage electrode 14 ₂₂. The charge stored in the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14₃₃ is moved to the region of the photoelectric conversion layer 13facing the charge storage electrode 14 ₂₃. The charge stored in theregion of the photoelectric conversion layer 13 facing the chargestorage electrode 14 ₃₄ is moved to the region of the photoelectricconversion layer 13 facing the charge storage electrode 14 ₂₄.

[Step-22]

The charge stored in the region of the photoelectric conversion layer 13facing the charge storage electrode 14 ₄₁ is moved to the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14₃₁. The charge stored in the region of the photoelectric conversionlayer 13 facing the charge storage electrode 14 ₄₂ is moved to theregion of the photoelectric conversion layer 13 facing the chargestorage electrode 14 ₃₂. The charge stored in the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14₄₃ is moved to the region of the photoelectric conversion layer 13facing the charge storage electrode 14 ₃₃. The charge stored in theregion of the photoelectric conversion layer 13 facing the chargestorage electrode 14 ₄₄ is moved to the region of the photoelectricconversion layer 13 facing the charge storage electrode 14 ₃₄.

[Step-30]

Furthermore, [step-10] can be executed again to read the charge storedin the region of the photoelectric conversion layer 13 facing the chargestorage electrode 14 ₂₁, the charge stored in the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14₂₂, the charge stored in the region of the photoelectric conversionlayer 13 facing the charge storage electrode 14 ₂₃, and the chargestored in the region of the photoelectric conversion layer 13 facing thecharge storage electrode 14 ₂₄ through the first electrode 11.

[Step-40]

Subsequently, the charge stored in the region of the photoelectricconversion layer 13 facing the charge storage electrode 14 ₂₁ is movedto the region of the photoelectric conversion layer 13 facing the chargestorage electrode 14 ₁₁. The charge stored in the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14₂₂ is moved to the region of the photoelectric conversion layer 13facing the charge storage electrode 14 ₁₂. The charge stored in theregion of the photoelectric conversion layer 13 facing the chargestorage electrode 14 ₂₃ is moved to the region of the photoelectricconversion layer 13 facing the charge storage electrode 14 ₁₃. Thecharge stored in the region of the photoelectric conversion layer 13facing the charge storage electrode 14 ₂₄ is moved to the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14₁₄.

[Step-41]

The charge stored in the region of the photoelectric conversion layer 13facing the charge storage electrode 14 ₃₁ is moved to the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14₂₁. The charge stored in the region of the photoelectric conversionlayer 13 facing the charge storage electrode 14 ₃₂ is moved to theregion of the photoelectric conversion layer 13 facing the chargestorage electrode 14 ₂₂. The charge stored in the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14₃₃ is moved to the region of the photoelectric conversion layer 13facing the charge storage electrode 14 ₂₃. The charge stored in theregion of the photoelectric conversion layer 13 facing the chargestorage electrode 14 ₃₄ is moved to the region of the photoelectricconversion layer 13 facing the charge storage electrode 14 ₂₄.

[Step-50]

Furthermore, [step-10] can be executed again to read the charge storedin the region of the photoelectric conversion layer 13 facing the chargestorage electrode 14 ₃₁, the charge stored in the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14₃₂, the charge stored in the region of the photoelectric conversionlayer 13 facing the charge storage electrode 14 ₃₃, and the chargestored in the region of the photoelectric conversion layer 13 facing thecharge storage electrode 14 ₃₄ through the first electrode 11.

[Step-60]

Subsequently, the charge stored in the region of the photoelectricconversion layer 13 facing the charge storage electrode 14 ₂₁ is movedto the region of the photoelectric conversion layer 13 facing the chargestorage electrode 14 ₁₁. The charge stored in the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14₂₂ is moved to the region of the photoelectric conversion layer 13facing the charge storage electrode 14 ₁₂. The charge stored in theregion of the photoelectric conversion layer 13 facing the chargestorage electrode 14 ₂₃ is moved to the region of the photoelectricconversion layer 13 facing the charge storage electrode 14 ₁₃. Thecharge stored in the region of the photoelectric conversion layer 13facing the charge storage electrode 14 ₂₄ is moved to the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14₁₄.

[Step-70]

Furthermore, [step-10] can be executed again to read the charge storedin the region of the photoelectric conversion layer 13 facing the chargestorage electrode 14 ₄₁, the charge stored in the region of thephotoelectric conversion layer 13 facing the charge storage electrode 14₄₂, the charge stored in the region of the photoelectric conversionlayer 13 facing the charge storage electrode 14 ₄₃, and the chargestored in the region of the photoelectric conversion layer 13 facing thecharge storage electrode 14 ₄₄ through the first electrode 11.

In the solid-state imaging apparatus of Embodiment 19, the firstelectrode is shared by the plurality of imaging elements included in theimaging element block. This can simplify and miniaturize theconfiguration and the structure in the pixel region in which theplurality of imaging elements are arrayed. Note that the plurality ofimaging elements provided for one floating diffusion layer may include aplurality of imaging elements of first type or may include at least oneimaging element of first type or one or two or more imaging elements ofsecond type.

Embodiment 20

Embodiment 20 is a modification of Embodiment 19. In a solid-stateimaging apparatus of Embodiment 20 in FIGS. 84, 85, 86, and 87schematically illustrating arrangement states of the first electrodes 11and the charge storage electrodes 14, two imaging elements are includedin the imaging element block. In addition, one on-chip micro lens 90 isarranged on the upper side of the imaging element block. Note that inthe examples illustrated in FIGS. 85 and 87 , the charge movementcontrol electrode 21 is arranged between the plurality of imagingelements included in the imaging element block.

For example, the photoelectric conversion layers corresponding to thecharge storage electrodes 14 ii, 14 ₂₁, 14 ₃₁, and 14 ₄₁ included in theimaging element blocks are highly sensitive to the incident light fromthe upper right in the drawings. In addition, the photoelectricconversion layers corresponding to the charge storage electrodes 14 ₁₂,14 ₂₂, 14 ₃₂, and 14 ₄₂ included in the imaging element blocks arehighly sensitive to the incident light from the upper left in thedrawings. Therefore, for example, the imaging element including thecharge storage electrode 14 ₁₁ and the imaging element including thecharge storage electrode 14 ₁₂ can be combined to acquire an image planephase difference signal. In addition, the signal from the imagingelement including the charge storage electrode 14 ₁₁ and the signal fromthe imaging element including the charge storage electrode 14 ₁₂ can beadded, and the combination of the imaging elements can provide oneimaging element. Although the first electrode 111 is arranged betweenthe charge storage electrode 14 ₁₁ and the charge storage electrode 14₁₂ in the example illustrated in FIG. 84 , one first electrode 111 canbe arranged to face two charge storage electrodes 14 ii and 14 ₁₂arranged side by side as in the example illustrated in FIG. 86 tothereby further improve the sensitivity.

Although the present disclosure has been described based on thepreferred Embodiments, the present disclosure is not limited to theseEmbodiments. The structures, the configurations, the manufacturingconditions, the manufacturing methods, and the used materials of theimaging elements, the stacked imaging elements, and the solid-stateimaging apparatuses described in Embodiments are illustrative and can beappropriately changed. The imaging elements of Embodiments can beappropriately combined. For example, the imaging element of Embodiment13, the imaging element of Embodiment 14, the imaging element ofEmbodiment 15, the imaging element of Embodiment 16, and the imagingelement of Embodiment 17 can be arbitrarily combined, and the imagingelement of Embodiment 13, the imaging element of Embodiment 14, theimaging element of Embodiment 15, the imaging element of Embodiment 16,and the imaging element of Embodiment 18 can be arbitrarily combined.

The floating diffusion layers FD₁, FD₂₁, FD₃, 51C, 45C, and 46C can alsobe shared depending on the case.

As in a modified example of the imaging element and the stacked imagingelement described in Embodiment 1 illustrated for example in FIG. 88 ,the first electrode 11 may extend in an opening portion 84A provided inthe insulating layer 82, and the first electrode 11 may be connected tothe photoelectric conversion layer 13.

Alternatively, as in a modified example of the imaging element and thestacked imaging element described in Embodiment 1 illustrated forexample in FIG. 89 and as in an enlarged schematic partialcross-sectional view of the part and the like of the first electrodeillustrated in FIG. 90A, the edge portion of the top surface of thefirst electrode 11 is covered by the insulating layer 82, and the firstelectrode 11 is exposed on the bottom surface of an opening portion 84B.The side surface of the opening portion 84B has a slope extending from afirst surface 82 a toward a second surface 82 b, in which the firstsurface 82 a is a surface of the insulating layer 82 in contact with thetop surface of the first electrode 11, and the second surface 82 b is asurface of the insulating layer 82 in contact with the part of thephotoelectric conversion layer 13 facing the charge storage electrode14. In this way, the side surface of the opening portion 84B is sloped,and the charge more smoothly moves from the photoelectric conversionlayer 13 to the first electrode 11. Note that although the side surfaceof the opening portion 84B has rotational symmetry with respect to theaxis of the opening portion 84B in the example illustrated in FIG. 90A,an opening portion 84C may be provided such that the side surface of theopening portion 84C sloped to extend from the first surface 82 a towardthe second surface 82 b is positioned closer to the charge storageelectrode 14 as illustrated in FIG. 90B. This makes the movement ofcharge difficult from the part of the photoelectric conversion layer 13on the opposite side of the charge storage electrode 14 with respect tothe opening portion 84C. In addition, although the side surface of theopening portion 84B is sloped to extend from the first surface 82 atoward the second surface 82 b, the edge portion of the side surface ofthe opening portion 84B in the second surface 82 b may be positionedoutside the edge portion of the first electrode 11 as illustrated inFIG. 90A or may be positioned inside the edge portion of the firstelectrode 11 as illustrated in FIG. 90C. The former configuration can beadopted to more easily transfer the charge, and the latter configurationcan be adopted to reduce the variations in the shape during theformation of the opening portions.

A reflow of an etching mask including a resist material formed to formthe opening portion in the insulating layer based on an etching methodcan slope the opening side surface of the etching mask, and the etchingmask can be used to etch the insulating layer 82 to form the openingportions 84B and 84C.

In addition, as in a modified example of the imaging element and thestacked imaging element described in Embodiment 1 illustrated forexample in FIG. 91 , the light may be incident from the second electrode12 side, and a light shielding layer 92 may be formed on the lightincident side closer to the second electrode 12. Note that various wiresprovided on the light incident side with respect to the photoelectricconversion layer may also function as a light shielding layer.

Note that although the light shielding layer 92 is formed on the upperside of the second electrode 12 in the example illustrated in FIG. 91 ,that is, although the light shielding layer 92 is formed on the lightincident side closer to the second electrode 12 and on the upper side ofthe first electrode 11, the light shielding layer 92 may be arranged onthe surface on the light incident side of the second electrode 12 asillustrated in FIG. 92 . In addition, the light shielding layer 92 maybe formed on the second electrode 12 as illustrated in FIG. 93 dependingon the case.

Alternatively, the light may be incident from the second electrode 12side, and the light may not be incident on the first electrode 11.Specifically, as illustrated in FIG. 91 , the light shielding layer 92is formed on the light incident side closer to the second electrode 12and on the upper side of the first electrode 11. Alternatively, asillustrated in FIG. 95 , the on-chip micro lens 90 may be provided onthe upper side of the charge storage electrode 14 and the secondelectrode 12. The light incident on the on-chip micro lens 90 may becollected by the charge storage electrode 14, and the light may notreach the first electrode 11. Note that in the case where the transfercontrol electrode 15 is provided as described in Embodiment 11, thelight may not be incident on the first electrode 11 and the transfercontrol electrode 15. Specifically, as illustrated in FIG. 94 , thelight shielding layer 92 may be formed on the upper side of the firstelectrode 11 and the transfer control electrode 15. Alternatively, thelight incident on the on-chip micro lens 90 may not reach the firstelectrode 11 or may not reach the first electrode 11 and the transfercontrol electrode 15.

These configurations and the structures can be adopted. Alternatively,the light shielding layer 92 can be provided so that the light isincident on only the part of the photoelectric conversion layer 13positioned on the upper side of the charge storage electrode 14.Alternatively, the on-chip micro lens 90 can be designed. In this way,the part of the photoelectric conversion layer 13 positioned on theupper side of the first electrode 11 (or the upper side of the firstelectrode 11 and the transfer control electrode 15) does not contributeto the photoelectric conversion. Therefore, all of the pixels can bemore certainly reset all at once, and the global shutter function can bemore easily realized. That is, in a driving method of the solid-stateimaging apparatus including a plurality of imaging elements with theconfigurations and the structures, the following steps are repeated:

-   -   releasing the charge in the first electrodes 11 all at once to        the outside the system while storing the charge in the        photoelectric conversion layer 13 in all of the imaging        elements; and    -   subsequently, transferring the charge stored in the        photoelectric conversion layer 13 all at once to the first        electrodes 11 in all of the imaging elements, and after the        completion of the transfer, the imaging elements sequentially        read the charge transferred to the first electrodes 11.

In the driving method of the solid-state imaging apparatus, the lightincident from the second electrode side is not incident on the firstelectrode in each imaging element. The charge in the first electrodes isreleased all at once to the outside the system while the charge isstored in the photoelectric conversion layer in all of the imagingelements. Therefore, the first electrodes can be certainly reset at thesame time in all of the imaging elements. In addition, subsequently, thecharge stored in the photoelectric conversion layer is transferred tothe first electrodes all at once in all of the imaging elements. Afterthe completion of the transfer, the imaging elements sequentially readthe charge transferred to the first electrodes. Therefore, the so-calledglobal shutter function can be easily realized.

Furthermore, in a modified example of Embodiment 11, a plurality oftransfer control electrodes may be provided from positions closest tothe first electrode 11 toward the charge storage electrode 14 asillustrated in FIG. 95 . Note that FIG. 96 illustrates an example ofproviding two transfer control electrodes 15A and 15B. Furthermore, theon-chip micro lens 90 may be provided on the upper side of the chargestorage electrode 14 and the second electrode 12. The light incident onthe on-chip micro lens 90 may be collected by the charge storageelectrode 14, and the light may not reach the first electrode 11 and thetransfer control electrodes 15A and 15B.

In Embodiment 13 illustrated in FIGS. 61 and 62 , the thicknesses of thecharge storage electrode segments 14 ₁, 14 ₂, and 14 ₃ are graduallyreduced to gradually increase the thicknesses of the insulating layersegments 82 ₁, 82 ₂, and 82 ₃. On the other hand, as in FIG. 97illustrating an enlarged schematic partial cross-sectional view of thestacked part of the charge storage electrode, the photoelectricconversion layer, and the second electrode in a modified example ofEmbodiment 13, the thicknesses of the charge storage electrode segments14 ₁, 14 ₂, and 14 ₃ may be constant, and the thicknesses of theinsulating layer segments 82 ₁, 82 ₂, and 82 ₃ may be graduallyincreased. Note that the thicknesses of the photoelectric conversionlayer segments 13 ₁, 13 ₂, and 13 ₃ are constant.

Furthermore, in Embodiment 14 illustrated in FIG. 64 , the thicknessesof the charge storage electrode segments 14 ₁, 14 ₂, and 14 ₃ aregradually reduced to gradually increase the thicknesses of thephotoelectric conversion layer segments 13 ₁, 13 ₂, and 13 ₃. On theother hand, as in FIG. 98 illustrating an enlarged schematic partialcross-sectional view of the stacked part of the charge storageelectrode, the photoelectric conversion layer, and the second electrodein a modified example of Embodiment 14, the thicknesses of the chargestorage electrode segments 14 ₁, 14 ₂, and 14 ₃ may be constant, and thethicknesses of the insulating layer segments 82 ₁, 82 ₂, and 82 ₃ may begradually reduced to gradually increase the thicknesses of thephotoelectric conversion layer segments 13 ₁, 13 ₂, and 13 ₃.

It is obvious that various modified examples described above can also beapplied to Embodiments other than Embodiment 1.

Although the electrons are the signal charge, and the conductivity typeof the photoelectric conversion layer formed on the semiconductorsubstrate is the n-type in Embodiments, Embodiments can also be appliedto a solid-state imaging apparatus in which the electron holes are thesignal charge. In this case, each semiconductor region can be asemiconductor region of the opposite conductivity type, and theconductivity type of the photoelectric conversion layer formed on thesemiconductor substrate can be the p-type.

Furthermore, in the examples described above, Embodiments are applied tothe CMOS solid-state imaging apparatus, in which the unit pixels thatdetect the signal charge as a physical quantity according to theincident light amount are arranged in a matrix. However, Embodiments arenot limited to the application to the CMOS solid-state imagingapparatus, and Embodiments can also be applied to the CCD solid-stateimaging apparatus. In the latter case, a vertical transfer register ofCCD structure transfers the signal charge in the vertical direction, anda horizontal transfer register transfers the signal charge in thehorizontal direction. The charge is amplified, and a pixel signal (imagesignal) is output. In addition, Embodiments are not limited to thecolumn-type solid-state imaging apparatuses in general, in which thepixels are formed in a two-dimensional matrix, and a column signalprocessing circuit is arranged for each pixel column. Furthermore, theselection transistor may not be included depending on the case.

Furthermore, the imaging element and the stacked imaging element of thepresent disclosure are not limited to the application to the solid-stateimaging apparatus that detects the distribution of the incident lightamount of visible light to obtain an image of the distribution. Theimaging element and the stacked imaging element can also be applied to asolid-state imaging apparatus that takes an image of the distribution ofthe incident amount of infrared rays, X rays, particles, or the like.Furthermore, in a broad sense, the imaging element and the stackedimaging element can be applied to solid-state imaging apparatuses(physical quantity distribution detection apparatuses) in general, suchas a fingerprint detection sensor, that detects the distribution ofanother physical quantity, such as pressure and capacitance, to obtainan image of the distribution.

Furthermore, the imaging element and the stacked imaging element are notlimited to the solid-state imaging apparatus that sequentially scans theunit pixels of the imaging region row-by-row to read the pixel signalsfrom the unit pixels. The imaging element and the stacked imagingelement can also be applied to an X-Y address type solid-state imagingapparatus that selects arbitrary pixels pixel-by-pixel and that readsthe pixel signals pixel-by-pixel from the selected pixels. Thesolid-state imaging apparatus may be formed as one chip or may be in aform of a module with an imaging function in which the imaging regionand the drive circuit or the optical system are packaged together.

In addition, the imaging element and the stacked imaging element are notlimited to the application to the solid-state imaging apparatus, and theimaging element and the stacked imaging element can also be applied toan imaging apparatus. Here, the imaging apparatus denotes a camerasystem, such as a digital still camera and a video camera, or anelectronic device with an imaging function, such as a cell phone. Theimaging apparatus is in a form of a module mounted on the electronicdevice, that is, a camera module, in some cases.

FIGS. 99A and 99B illustrate equivalent circuit diagrams of modifiedexamples of the transistors that drive the charge storage electrodes.FIGS. 100A and 100B schematically illustrate waveforms of pulses fordriving the transistors in the equivalent circuits illustrated in FIGS.99A and 99B. The horizontal axis of FIGS. 100A and 100B indicates thetime, and the vertical axis indicates the potential of the chargestorage electrode 14. One transistor usually applies the potential tothe charge storage electrode 14. Note that the operation of thetransistor applying the potential to the charge storage electrode 14will be expressed as “the charge storage electrode 14 is driven by thetransistor.” On the other hand, in the example illustrated in FIGS. 99Aand 100A, two transistors (FET-1, FET-2) drive the charge storageelectrode 14. Furthermore, in the initial stage of the charge transferperiod, the charge storage electrode 14 is driven by one transistor(FET-1), and in the later stage of the charge transfer period, thecharge storage electrode 14 is driven by two transistors (FET-1, FET-2)at the same time. Note that reference sign “FET-0” denotes a transistorfor control. In the example illustrated in FIGS. 99B and 100B, thecharge storage electrode 14 is driven by a transistor with large drivingcapability (FET-5) and a transistor with small driving capability(FET-3). Specifically, the charge storage electrode 14 is driven by thetransistor with small driving capability (FET-3) in the initial stage ofthe charge transfer period, and the charge storage electrode 14 isdriven by the transistor with large driving capability (FET-5) in thelater stage of the charge transfer period. Note that reference sign“FET-4” denotes a MOS diode. The magnitude of the driving capability ofthe transistor is defined by, for example, the channel width of thetransistor. Based on the configuration, the charge storage electrode 14can be driven by one transistor or by a transistor with small drivingcapability when there is a large amount of charge to be transferred. Inthis way, the generation of blooming can be suppressed. When there is nomore concern for the generation of blooming, the charge storageelectrode 14 can be driven by two transistors or by a transistor withlarge driving capability (or by a transistor with large drivingcapability and a transistor with small driving capability). This canincrease the charge transfer speed (reduce the charge transfer time).

FIG. 10 ₁ illustrates a conceptual diagram of an example in which asolid-state imaging apparatus 201 including the imaging element and thestacked imaging element of the present disclosure is used in anelectronic device (camera) 200. The electronic device 200 includes thesolid-state imaging apparatus 201, an optical lens 210, a shutterapparatus 211, a drive circuit 212, and a signal processing circuit 213.The optical lens 210 uses image light (incident light) from an object toform an image on the imaging surface of the solid-state imagingapparatus 201. As a result, signal charge is stored in the solid-stateimaging apparatus 201 for a certain period. The shutter apparatus 211controls a light application period and a light shielding period for thesolid-state imaging apparatus 201. The drive circuit 212 supplies drivesignals for controlling a transfer operation and the like of thesolid-state imaging apparatus 201 and a shutter operation of the shutterapparatus 211. The signal of the solid-state imaging apparatus 201 istransferred based on the drive signal (timing signal) supplied from thedrive circuit 212. The signal processing circuit 213 executes varioustypes of signal processing. The video signal after the signal processingis stored in a storage medium, such as a memory, or output to a monitor.In the electronic device 200, the pixel size in the solid-state imagingapparatus 201 can be miniaturized, and the transfer efficiency can beimproved. Therefore, the pixel characteristics can be improved in theelectronic device 200. The electronic device 200 to which thesolid-state imaging apparatus 201 can be applied is not limited to thecamera. The solid-state imaging apparatus 201 can be applied to adigital still camera, a camera module for mobile device, such as a cellphone, and other imaging apparatuses.

Note that the present disclosure can also be configured as follows.

[A01]<<Imaging Element: First Aspect>

An imaging element including:

-   -   a photoelectric conversion unit including a first electrode, a        photoelectric conversion layer, and a second electrode that are        stacked, in which    -   the photoelectric conversion unit further includes a charge        storage electrode arranged apart from the first electrode and        arranged to face the photoelectric conversion layer through an        insulating layer, and    -   when photoelectric conversion occurs in the photoelectric        conversion layer after light enters the photoelectric conversion        layer, an absolute value of a potential applied to a part of the        photoelectric conversion layer facing the charge storage        electrode is a value larger than an absolute value of a        potential applied to a region of the photoelectric conversion        layer positioned between the imaging element and an adjacent        imaging element.

[A02]<<Imaging Element: Second Aspect>>

An imaging element including:

-   -   a photoelectric conversion unit including a first electrode, a        photoelectric conversion layer, and a second electrode that are        stacked, in which    -   the photoelectric conversion unit further includes a charge        storage electrode arranged apart from the first electrode and        arranged to face the photoelectric conversion layer through an        insulating layer, and    -   a width of a region of the photoelectric conversion layer        positioned between the first electrode and the charge storage        electrode is narrower than a width of a region of the        photoelectric conversion layer positioned between the imaging        element and an adjacent imaging element.

[A03]<<Imaging Element: Third Aspect>>

An imaging element including:

-   -   a photoelectric conversion unit including a first electrode, a        photoelectric conversion layer, and a second electrode that are        stacked, in which    -   the photoelectric conversion unit further includes a charge        storage electrode arranged apart from the first electrode and        arranged to face the photoelectric conversion layer through an        insulating layer, and    -   a charge movement control electrode is formed in a region        facing, through the insulating layer, a region of the        photoelectric conversion layer positioned between the imaging        element and an adjacent imaging element.

[A04]<<Imaging Element: Fourth Aspect>>

An imaging element including:

-   -   a photoelectric conversion unit including a first electrode, a        photoelectric conversion layer, and a second electrode that are        stacked, in which    -   the photoelectric conversion unit further includes a charge        storage electrode arranged apart from the first electrode and        arranged to face the photoelectric conversion layer through an        insulating layer, and    -   a charge movement control electrode is formed, in place of the        second electrode, over a region of the photoelectric conversion        layer positioned between the imaging element and an adjacent        imaging element.

[A05]<<Imaging Element: Fifth Aspect>>

An imaging element including:

-   -   a photoelectric conversion unit including a first electrode, a        photoelectric conversion layer, and a second electrode that are        stacked, in which    -   the photoelectric conversion unit further includes a charge        storage electrode arranged apart from the first electrode and        arranged to face the photoelectric conversion layer through an        insulating layer, and    -   a value of a dielectric constant of an insulating material        included in a region between the first electrode and the charge        storage electrode is higher than a value of a dielectric        constant of an insulating material included in a region between        the imaging element and an adjacent imaging element.

[A06]<<Imaging Element: Sixth Aspect>>

An imaging element including:

-   -   a photoelectric conversion unit including a first electrode, a        photoelectric conversion layer, and a second electrode that are        stacked, in which    -   the photoelectric conversion unit further includes a charge        storage electrode arranged apart from the first electrode and        arranged to face the photoelectric conversion layer through an        insulating layer, and    -   a thickness of a region of the insulating layer positioned        between the first electrode and the charge storage electrode is        thinner than a thickness of a region of the insulating layer        positioned between the imaging element and an adjacent imaging        element.

[A07]<<Imaging Element: Seventh Aspect>>

An imaging element including:

-   -   a photoelectric conversion unit including a first electrode, a        photoelectric conversion layer, and a second electrode that are        stacked, in which    -   the photoelectric conversion unit further includes a charge        storage electrode arranged apart from the first electrode and        arranged to face the photoelectric conversion layer through an        insulating layer, and    -   a thickness of a region of the photoelectric conversion layer        positioned between the first electrode and the charge storage        electrode is thicker than a thickness of a region of the        photoelectric conversion layer positioned between the imaging        element and an adjacent imaging element.

[A08]<<Imaging Element: Eighth Aspect>>

An imaging element including:

-   -   a photoelectric conversion unit including a first electrode, a        photoelectric conversion layer, and a second electrode that are        stacked, in which    -   the photoelectric conversion unit further includes a charge        storage electrode arranged apart from the first electrode and        arranged to face the photoelectric conversion layer through an        insulating layer, and    -   a fixed charge amount in a region of an interface between the        photoelectric conversion layer and the insulating layer        positioned between the first electrode and the charge storage        electrode is less than a fixed charge amount in a region of an        interface between the photoelectric conversion layer and the        insulating layer positioned between the imaging element and an        adjacent imaging element.

[A09]<<Imaging Element: Ninth Aspect>>

An imaging element including:

-   -   a photoelectric conversion unit including a first electrode, a        photoelectric conversion layer, and a second electrode that are        stacked, in which    -   the photoelectric conversion unit further includes a charge        storage electrode arranged apart from the first electrode and        arranged to face the photoelectric conversion layer through an        insulating layer, and    -   a value of charge mobility in a region of the photoelectric        conversion layer positioned between the first electrode and the        charge storage electrode is larger than a value of charge        mobility in a region of the photoelectric conversion layer        positioned between the imaging element and an adjacent imaging        element.

[A10]

The imaging element according to [A03], further including:

-   -   a control unit provided on a semiconductor substrate and        including a drive circuit, in which    -   the first electrode, the second electrode, the charge storage        electrode, and the charge movement control electrode are        connected to the drive circuit,    -   in a charge storage period, the drive circuit applies a        potential V₁₁ to the first electrode, applies a potential V₁₂ to        the charge storage electrode, and applies a potential V₁₃ to the        charge movement control electrode, and charge is stored in the        photoelectric conversion layer, and in a charge transfer period,        the drive circuit applies a potential V₂₁ to the first        electrode, applies a potential V₂₂ to the charge storage        electrode, and applies a potential V₂₃ to the charge movement        control electrode, and the charge stored in the photoelectric        conversion layer is read out to the control unit through the        first electrode, where        in a case where the potential of the first electrode is higher        than the potential of the second electrode,

V ₁₂ ≥V ₁₁ , V ₁₂ >V ₁₃, and V ₂₁ >V ₂₂ >V ₂₃ hold, and

in a case where the potential of the first electrode is lower than thepotential of the second electrode,

V ₁₂ ≤V ₁₁ , V ₁₂ <V ₁₃, and V ₂₁ <V ₂₂ <V ₂₃ hold.

[A11]

The imaging element according to [A04], further including:

-   -   a control unit provided on a semiconductor substrate and        including a drive circuit, in which    -   the first electrode, the second electrode, the charge storage        electrode, and the charge movement control electrode are        connected to the drive circuit,    -   in a charge storage period, the drive circuit applies a        potential V₂′ to the second electrode and applies a potential        V₁₃′ to the charge movement control electrode, and charge is        stored in the photoelectric conversion layer, and    -   in a charge transfer period, the drive circuit applies a        potential V₂″ to the second electrode and applies a potential        V₂₃″ to the charge movement control electrode, and the charge        stored in the photoelectric conversion layer is read out to the        control unit through the first electrode, where        in a case where the potential of the first electrode is higher        than the potential of the second electrode,

V ₂ ′≥V ₁₃′ and V ₂ ″≥V ₂₃″ hold, and

in a case where the potential of the first electrode is lower than thepotential of the second electrode,

V ₂ ′≤V ₁₃′ and V ₂ ″≤V ₂₃″ hold.

[A12]

The imaging element according to any one of [A01] to [A11], furtherincluding:

-   -   a semiconductor substrate, in which    -   the photoelectric conversion unit is arranged on an upper side        of the semiconductor substrate.

[A13]

The imaging element according to any one of [A01] to [A12], furtherincluding:

-   -   a transfer control electrode arranged between the first        electrode and the charge storage electrode, arranged apart from        the first electrode and the charge storage electrode, and        arranged to face the photoelectric conversion layer through the        insulating layer.

[A14]

The imaging element according to any one of [A01] to [A13], in which

-   -   the charge storage electrode includes a plurality of charge        storage electrode segments.

[A15]

The imaging element according to any one of [A01] to [A14], in which

-   -   the size of the charge storage electrode is larger than the        first electrode.

[A16]

The imaging element according to any one of [A01] to [A15], in which

-   -   the first electrode extends in an opening portion provided in        the insulating layer and is connected to the photoelectric        conversion layer.

[A17]

The imaging element according to any one of [A01] to [A15], in which

-   -   the photoelectric conversion layer extends in an opening portion        provided in the insulating layer and is connected to the first        electrode.

[A18]

The imaging element according to [A17], in which

-   -   an edge portion of a top surface of the first electrode is        covered by the insulating layer,    -   the first electrode is exposed on a bottom surface of the        opening portion, and    -   a side surface of the opening portion is sloped to extend from a        first surface toward a second surface, where the first surface        is a surface of the insulating layer in contact with the top        surface of the first electrode, and the second surface is a        surface of the insulating layer in contact with a part of the        photoelectric conversion layer facing the charge storage        electrode.

[A19]

The imaging element according to [A18], in which

-   -   the side surface of the opening portion sloped to extend from        the first surface toward the second surface is positioned on a        charge storage electrode side.

[A20]<<Control of Potentials of First Electrode and Charge StorageElectrode>>

The imaging element according to any one of [A01] to [A19], furtherincluding:

-   -   a control unit provided on the semiconductor substrate and        including a drive circuit, in which    -   the first electrode and the charge storage electrode are        connected to the drive circuit,    -   in the charge storage period, the drive circuit applies the        potential V₁₁ to the first electrode and applies the potential        V₁₂ to the charge storage electrode, and charge is stored in the        photoelectric conversion layer, and    -   in the charge transfer period, the drive circuit applies the        potential V₂₁ to the first electrode and applies the potential        V₂₂ to the charge storage electrode, and the charge stored in        the photoelectric conversion layer is read out to the control        unit through the first electrode, where in a case where the        potential of the first electrode is higher than the potential of        the second electrode, V₁₂≥V₁₁ and V₂₂<V₂₁ hold, and        in a case where the potential of the first electrode is lower        than the potential of the second electrode,

V ₁₂ ≤V ₁₁ and V ₂₂ >V ₂₁ hold.

[A21]<<Charge Storage Electrode Segment>>

The imaging element according to any one of [A01] to [A13], in which

-   -   the charge storage electrode includes a plurality of charge        storage electrode segments.

[A22]

The imaging element according to [A21], in which

-   -   in a case where the potential of the first electrode is higher        than the potential of the second electrode, a potential applied        to a charge storage electrode segment positioned at a place        closest to the first electrode is higher than a potential        applied to a charge storage electrode segment positioned at a        place farthest from the first electrode in the charge transfer        period, and    -   in a case where the potential of the first electrode is lower        than the potential of the second electrode, the potential        applied to the charge storage electrode segment positioned at        the place closest to the first electrode is lower than the        potential applied to the charge storage electrode segment        positioned at the place farthest from the first electrode in the        charge transfer period.

[A23]

The imaging element according to any one of [A01] to [A22], in which

-   -   at least a floating diffusion layer and an amplification        transistor included in the control unit are provided on the        semiconductor substrate, and    -   the first electrode is connected to the floating diffusion layer        and a gate portion of the amplification transistor.

[A24]

The imaging element according to [A23], in which

-   -   a reset transistor and a selection transistor included in the        control unit are further provided on the semiconductor        substrate,    -   the floating diffusion layer is connected to one source/drain        region of the reset transistor,    -   one source/drain region of the amplification transistor is        connected to one source/drain region of the selection        transistor, and another source/drain region of the selection        transistor is connected to a signal line.

[A25]

The imaging element according to any one of [A01] to [A24], in which

-   -   light is incident from a second electrode side, and a light        shielding layer is formed on a light incident side closer to the        second electrode.

[A26]

The imaging element according to any one of [A01] to [A24], in which

-   -   light is incident from a second electrode side, and the light is        not incident on the first electrode.

[A27]

The imaging element according to [A26], in which

-   -   a light shielding layer is formed on a light incident side        closer to the second electrode, on an upper side of the first        electrode.

[A28]

The imaging element according to [A26], in which

-   -   an on-chip micro lens is provided on an upper side of the charge        storage electrode and the second electrode, and    -   light incident on the on-chip micro lens is collected by the        charge storage electrode.

[A29]

The imaging element according to any one of [A01] to [A28], in which

-   -   the charge storage electrode is driven by two transistors,    -   the charge storage electrode is driven by one transistor in an        initial stage of the charge transfer period, and the charge        storage electrode is driven by two transistors at the same time        in a later stage of the charge transfer period.

[A30]

The imaging element according to any one of [A01] to [A28], in which

-   -   the charge storage electrode is driven by a transistor with        large driving capability and a transistor with small driving        capability,    -   the charge storage electrode is driven by the transistor with        small driving capability in an initial stage of the charge        transfer period, and the charge storage electrode is driven by        the transistor with large driving capability in a later stage of        the charge transfer period.

[B01]<<Imaging Element: First Configuration>>

The imaging element according to any one of [A01] to [A30], in which

-   -   the photoelectric conversion unit includes N (where N≥2)        photoelectric conversion unit segments,    -   the photoelectric conversion layer includes N photoelectric        conversion layer segments,    -   the insulating layer includes N insulating layer segments,    -   the charge storage electrode includes N charge storage electrode        segments,    -   an nth (where n=1, 2, 3, . . . N) photoelectric conversion unit        segment includes an nth charge storage electrode segment, an nth        insulating layer segment, and an nth photoelectric conversion        layer segment,    -   the larger the value of n of the photoelectric conversion unit        segment, the farther the position of the photoelectric        conversion unit segment from the first electrode, and    -   the thicknesses of the insulating layer segments gradually        change from the first photoelectric conversion unit segment to        the Nth photoelectric conversion unit segment.

[B02]<<Imaging Element: Second Configuration>>

The imaging element according to any one of [A01] to [A30], in which

-   -   the photoelectric conversion unit includes N (where N≥2)        photoelectric conversion unit segments,    -   the photoelectric conversion layer includes N photoelectric        conversion layer segments,    -   the insulating layer includes N insulating layer segments,    -   the charge storage electrode includes N charge storage electrode        segments,    -   an nth (where n=1, 2, 3, . . . N) photoelectric conversion unit        segment includes an nth charge storage electrode segment, an nth        insulating layer segment, and an nth photoelectric conversion        layer segment,    -   the larger the value of n of the photoelectric conversion unit        segment, the farther the position of the photoelectric        conversion unit segment from the first electrode, and    -   the thicknesses of the photoelectric conversion layer segments        gradually change from the first photoelectric conversion unit        segment to the Nth photoelectric conversion unit segment.

[B03]<<Imaging Element: Third Configuration>>

The imaging element according to any one of [A01] to [A30], in which

-   -   the photoelectric conversion unit includes N (where N≥2)        photoelectric conversion unit segments,    -   the photoelectric conversion layer includes N photoelectric        conversion layer segments,    -   the insulating layer includes N insulating layer segments,    -   the charge storage electrode includes N charge storage electrode        segments,    -   an nth (where n=1, 2, 3, . . . N) photoelectric conversion unit        segment includes an nth charge storage electrode segment, an nth        insulating layer segment, and an nth photoelectric conversion        layer segment,    -   the larger the value of n of the photoelectric conversion unit        segment, the farther the position of the photoelectric        conversion unit segment from the first electrode, and    -   materials included in the insulating layer segments vary between        adjacent photoelectric conversion unit segments.

[B04]<<Imaging Element: Fourth Configuration>>

The imaging element according to any one of [A01] to [A30], in which

-   -   the photoelectric conversion unit includes N (where N≥2)        photoelectric conversion unit segments,    -   the photoelectric conversion layer includes N photoelectric        conversion layer segments,    -   the insulating layer includes N insulating layer segments,    -   the charge storage electrode includes N charge storage electrode        segments arranged apart from each other,    -   an nth (where n=1, 2, 3, . . . N) photoelectric conversion unit        segment includes an nth charge storage electrode segment, an nth        insulating layer segment, and an nth photoelectric conversion        layer segment,    -   the larger the value of n of the photoelectric conversion unit        segment, the farther the position of the photoelectric        conversion unit segment from the first electrode, and    -   materials included in the charge storage electrode segments vary        between adjacent photoelectric conversion unit segments.

[B05]<<Imaging Element: Fifth Configuration>>

The imaging element according to any one of [A01] to [A30], in which

-   -   the photoelectric conversion unit includes N (where N≥2)        photoelectric conversion unit segments,    -   the photoelectric conversion layer includes N photoelectric        conversion layer segments,    -   the insulating layer includes N insulating layer segments,    -   the charge storage electrode includes N charge storage electrode        segments arranged apart from each other,    -   an nth (where n=1, 2, 3, . . . N) photoelectric conversion unit        segment includes an nth charge storage electrode segment, an nth        insulating layer segment, and an nth photoelectric conversion        layer segment,    -   the larger the value of n of the photoelectric conversion unit        segment, the farther the position of the photoelectric        conversion unit segment from the first electrode, and    -   the areas of the charge storage electrode segments gradually        decrease from the first photoelectric conversion unit segment to        the Nth photoelectric conversion unit segment.

[B06]<<Imaging Element: Sixth Configuration>>

The imaging element according to any one of [A01] to [A30], in which

-   -   a cross-sectional area of a stacked part of the charge storage        electrode, the insulating layer, and the photoelectric        conversion layer when the stacked part is cut in a YZ virtual        plane changes in accordance with the distance from the first        electrode, where a Z direction is a stacking direction of the        charge storage electrode, the insulating layer, and the        photoelectric conversion layer, and an X direction is a        direction away from the first electrode.

[C01]<<Stacked Imaging Element>>

A stacked imaging element including at least one imaging elementaccording to any one of [A01] to [B06].

[D01]<<Solid-State Imaging Apparatus: First Aspect>>

A solid-state imaging apparatus including a plurality of imagingelements according to any one of [A01] to [B06].

[D02]<<Solid-State Imaging Apparatus: Second Aspect>>

A solid-state imaging apparatus including a plurality of stacked imagingelements according to [D01].

[D03]<<Solid-State Imaging Apparatus: First Configuration>>

A solid-state imaging apparatus including

-   -   a plurality of imaging elements according to any one of [A01] to        [B06], in which    -   a plurality of imaging elements are included in an imaging        element block, and    -   the first electrode is shared by the plurality of imaging        elements included in the imaging element block.

[D04]<<Solid-State Imaging Apparatus: Second Configuration>>

A solid-state imaging apparatus including

-   -   a plurality of stacked imaging elements each including at least        one imaging element according to any one of [A01] to [B06], in        which    -   a plurality of stacked imaging elements are included in an        imaging element block, and    -   the first electrode is shared by the plurality of stacked        imaging elements included in the imaging element block.

[D05]

The solid-state imaging apparatus according to any one of [D01] to[D04], in which

-   -   one on-chip micro lens is arranged on an upper side of one        imaging element.

[D06]

The solid-state imaging apparatus according to any one of [D01] to[D04], in which

-   -   two imaging elements are included in the imaging element block,        and    -   one on-chip micro lens is arranged on an upper side of the        imaging element block.

[D07]

The solid-state imaging element according to any one of [D01] to [D06],in which

-   -   one floating diffusion layer is provided for a plurality of        imaging elements.

[D08]

The solid-state imaging apparatus according to any one of [D01] to[D07], in which

-   -   the first electrode is arranged adjacent to the charge storage        electrode of each imaging element.

[D09]

The solid-state imaging apparatus according to any one of [D01] to[D08], in which

-   -   the first electrode is arranged adjacent to the charge storage        electrodes of part of the plurality of imaging elements and is        not arranged adjacent to the charge storage electrodes of the        rest of the plurality of imaging elements.

[D10]

The solid-state imaging apparatus according to [D09], in which

-   -   the distance between the charge storage electrode included in        the imaging element and the charge storage electrode included in        the imaging element is longer than the distance between the        first electrode and the charge storage electrode in the imaging        element adjacent to the first electrode.

[E01]<<Driving Method of Solid-State Imaging Apparatus>>

A driving method of a solid-state imaging apparatus including aplurality of imaging elements, each of the plurality of imaging elementsincluding:

-   -   a photoelectric conversion unit including a first electrode, a        photoelectric conversion layer, and a second electrode that are        stacked, in which    -   the photoelectric conversion unit further includes a charge        storage electrode arranged apart from the first electrode and        arranged to face the photoelectric conversion layer through an        insulating layer,    -   light is incident from a second electrode side, and the light is        not incident on the first electrode,    -   the driving method of the solid-state imaging apparatus        repeating the steps of:    -   releasing charge in the first electrodes all at once to the        outside of a system while storing the charge in the        photoelectric conversion layers in all of the imaging elements;        and subsequently,    -   transferring the charge stored in the photoelectric conversion        layers all at once to the first electrodes in all of the imaging        elements, and after the completion of the transfer, sequentially        reading the charge transferred to the first electrodes in the        imaging elements.

REFERENCE SIGNS LIST

-   -   10 ₁, 10 ₂, 10 ₃ . . . Photoelectric conversion unit segment, 11        . . . First electrode, 12 . . . Second electrode, 13 . . .        Photoelectric conversion layer, 13 _(A) . . . Region of        photoelectric conversion layer (region-A of photoelectric        conversion layer) positioned between first electrode and charge        storage electrode, 13 _(B) . . . Region of photoelectric        conversion layer (region-B of photoelectric conversion layer)        positioned between imaging element and adjacent imaging element,        13 _(C) . . . Part of photoelectric conversion layer facing        charge storage electrode, 13 _(DN), 13 _(DN)′ . . . Lower layer        of photoelectric conversion layer, 13 _(UP), 13 _(UP)′ . . .        Upper layer of photoelectric conversion layer, 14 . . . Charge        storage electrode, 14A, 14B, 14C . . . Charge storage electrode        segment, 15, 15A, 15B . . . Transfer control electrode (charge        transfer electrode), 21 . . . Charge movement control electrode,        22 . . . Pad portion, 23 . . . Connection hole, 24, 24 ₁, 24 ₂ .        . . Charge movement control electrode, 25 . . . Discharge        electrode, 41 . . . n-type semiconductor region included in        second imaging element, 43 . . . n-type semiconductor region        included in third imaging element, 42, 44, 73 . . . p⁺ layer,        FD₁, FD₂, FD₃, FD₃, 45C, 46C . . . Floating diffusion layer, TR1        _(amp) . . . Amplification transistor, TR1 _(rst) . . . Reset        transistor, TR1 _(sel) . . . Selection transistor, 51 . . . Gate        portion of reset transistor TR1 _(rst), 51A . . . Channel        formation region of reset transistor TR1 _(rst), 51B, 51C . . .        Source/drain region of reset transistor TR1 _(rst), 52 . . .        Gate portion of amplification transistor TR1 _(amp), 52A . . .        Channel formation region of amplification transistor TR1 _(amp),        52B, 52C . . . Source/drain region of amplification transistor        TR1 _(amp), 53 . . . Gate portion of selection transistor TR1        _(sel), 53A . . . Channel formation region of selection        transistor TR1 _(sel), 53B, 53C . . . Source/drain region of        selection transistor TR1 _(sel), TR2 _(trs) . . . Transfer        transistor, 45 . . . Gate portion of transfer transistor, TR2        _(rst) . . . Reset transistor, TR2 _(amp) . . . Amplification        transistor, TR2 _(sel) . . . Selection transistor, TR3 _(trs) .        . . Transfer transistor, 46 . . . Gate portion of transfer        transistor, TR3 _(rst) . . . Reset transistor, TR3 _(amp) . . .        Amplification transistor, TR3 _(sel) . . . Selection transistor,        V_(DD) . . . Power source, RST₁, RST₂, RST₃ . . . Reset line,        SEL₁, SEL₂, SEL₃ . . . Selection line, 117, VSL₁, VSL₂, VSL₃ . .        . Signal line, TG₂, TG₃ . . . Transfer gate line, V_(0A),        V_(0B), V_(0T), V_(OU) . . . Wire, 61 . . . Contact hole        portion, 62 . . . Wiring layer, 63, 64, 68A . . . Pad portion,        65, 68B . . . Connection hole, 66, 67, 69 . . . Connection        portion, 70 . . . Semiconductor substrate, 70A . . . First        surface (front surface) of semiconductor substrate, 70B . . .        Second surface (back surface) of semiconductor substrate, 71 . .        . Element separation region, 72 . . . Oxide film, 74 . . . HfO₂        film, 75 . . . Insulating film, 76 . . . Interlayer insulating        layer, 77, 78, 81 . . . Interlayer insulating layer, 82 . . .        Insulating layer, 82 _(A) . . . Region (region-a) of first        electrode and charge storage electrode, 82 _(B) . . . Region        (region-b) between imaging element and adjacent imaging element,        82 _(A)′ . . . Insulating material-A, 82 _(B)′ . . . Insulating        material-B, 82 a . . . First surface of insulating layer, 82 b .        . . Second surface of insulating layer, 82 c . . . Third surface        of insulating layer, 83 . . . Protective layer, 84, 84A, 84B,        84C . . . Opening portion, 85, 85A . . . Second opening portion,        90 . . . On-chip micro lens, 91 . . . Various imaging element        constituent elements positioned on lower side of interlayer        insulating layer, 92 . . . Light shielding layer, 100 . . .        Solid-state imaging apparatus, 101 . . . Stacked imaging        element, 111 . . . Imaging region, 112 . . . Vertical drive        circuit, 113 . . . Column signal processing circuit, 114 . . .        Horizontal drive circuit, 115 . . . Output circuit, 116 . . .        Drive control circuit, 118 . . . Horizontal signal line, 200 . .        . Electronic device (camera), 201 . . . Solid-state imaging        apparatus, 210 . . . Optical lens, 211 . . . Shutter apparatus,        212 . . . Drive circuit, 213 . . . Signal processing circuit

1. A light detecting element, comprising: a photoelectric conversionunit comprising a first electrode, a photoelectric conversion layer, anda second electrode, wherein the photoelectric conversion layer isdisposed between the first electrode and the second electrode, thephotoelectric conversion unit further comprises a charge storageelectrode arranged apart from the first electrode and arranged to facethe photoelectric conversion layer through an insulating layer, and whenphotoelectric conversion occurs in the photoelectric conversion layerafter light enters the photoelectric conversion layer, an absolute valueof a potential applied to a part of the photoelectric conversion layerfacing the charge storage electrode is a value larger than an absolutevalue of a potential applied to a region of the photoelectric conversionlayer positioned between the light detecting element and an adjacentlight detecting element and an absolute value of a potential applied toa part of the photoelectric conversion layer facing a region between thefirst electrode and the charge storage electrode is a value larger thanthe absolute value of the potential applied to the region of thephotoelectric conversion layer positioned between the light detectingelement and the adjacent light detecting element.
 2. The light detectingelement according to claim 1, further comprising: a semiconductorsubstrate, wherein the photoelectric conversion unit is arranged abovean upper side of the semiconductor substrate.
 3. The light detectingelement according to claim 1, further comprising: a transfer controlelectrode arranged between the first electrode and the charge storageelectrode, arranged apart from the first electrode and the chargestorage electrode, and arranged to face the photoelectric conversionlayer through the insulating layer.
 4. The imaging element according toclaim 1, wherein the charge storage electrode includes a plurality ofcharge storage electrode segments.
 5. The light detecting elementaccording to claim 1, wherein the size of the charge storage electrodeis larger than the first electrode.
 6. A stacked light detecting elementcomprising at least one light detecting element according to claim
 1. 7.A light detecting apparatus comprising a plurality of light detectingelements according to claim
 1. 8. A light detecting apparatus comprisinga plurality of stacked light detecting elements according to claim 6.